BCP 28, BCP 48
1 Oct-20-1999
PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCP 29/49 (NPN)
VPS05163
1
2
3
4
EHA00008
B(1)
E(3)
C(2,4)
Type Marking Pin Configuration Package
BCP 28
BCP 48
BCP 28
BCP 48
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT-223
SOT-223
Maximum Ratings
BCP 28 BCP 48 UnitParameter Symbol
Collector-emitter voltage 60 V30
VCEO
VCBO 40 80Collector-base voltage
10Emitter-base voltage 10
VEBO
DC collector current IC500 mA
800 mAPeak collector current ICM
Base current IB100
Peak base current IBM 200
W1.5
Total power dissipation, TS = 124 °C Ptot
Junction temperature 150 °C
Tj
-65 ... 150Storage temperature Tst
g
Thermal Resistance
K/W
RthJA ≤75
Junction ambient 1)
Junction - soldering point RthJS ≤17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BCP 28, BCP 48
2 Oct-20-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BCP 28
BCP 48
V(BR)CEO
-
-
30
60
V
-
-
BCP 28
BCP 48
40
80
Collector-base breakdown voltage
IC = 100 µA, IB = 0
-
-
-
-
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
10 --
V(BR)EBO
Collector cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
-
-
-
-
nA
100
100
BCP 28
BCP 48
ICBO
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
VCB = 60 V, IE = 0 , TA = 150 °C
-
-
-
-
10
10
µA
ICBO
BCP 28
BCP 48
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO - 100 nA-
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCP 28
BCP 48
4000
2000
hFE -
-
-
-
-
BCP 28
BCP 48
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
-
-
-
10000
4000
hFE
-
-
-
-
20000
10000
hFE
BCP 28
BCP 48
DC current gain 1)
IC = 100 mA, VCE = 5 V
-
-
BCP 28
BCP 48
4000
2000
hFE
DC current gain 1)
IC = 500 mA, VCE = 5 V
-
-
1) Pulse test: t ≤ 300µs, D = 2%
BCP 28, BCP 48
3 Oct-20-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC Characteristics
V1--
VCEsat
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 1.5
AC Characteristics
- MHz
fT-Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
200
-Collector-base capacitance
VCB = 10 V, f = 1 MHz
-
Ccb pF8
1) Pulse test: t ≤ 300µs, D = 2%
BCP 28, BCP 48
4 Oct-20-1999
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0
0.4
0 50 100 150
BCP 28/48 EHP00241
˚C
0.6
0.2
TA
S
T
0.8
1.0
1.2
1.4
W
1.6
P
tot
T T;
AS
Collector cutoff current ICBO = f (TA)
VCB = VCEmax
0
10
EHP00242BCP 28/48
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00244BCP 28/48
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00243BCP 28/48
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
f
MHz
Ι
BCP 28, BCP 48
5 Oct-20-1999
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
0
10
EHP00247BCP 28/48
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
DC current gain hFE = f (IC)
VCE = 5V
10
EHP00246BCP 28/48
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10
˚C
125
5
25
˚C
-55
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1000
0
10
EHP00249BCP 28/48
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector-base capacitance CCB = f (VCBO
)
Emitter-base capacitance CEB = f (VEBO)
10
EHP00248BCP 28/48
-1 1
10
V
10
0
5
10
pF
0
EB0
VV
CB0
CB0
C
C
EB0
()
()
EB0
C
CB0
C
