SLE D) MM 8236671 0003866 O02 MESEKG SEMIKRON INC | SEMIKRON Vrsm lFRMs (maximum values for continuous operation) VRRM 200A | 260A | 500 A lFAV (sin. 180; Tease = 100 C) Vv 125A 165A 320A 200 SKN 100/02 SKN 130/02 | SKN 240/02 400 SKN 100/04 SKN 130/04 SKN 240/04 800 SKN 100/08 SKN 130/08 SKN 240/08 1200 SKN 100/12 SKN 130/12 SKN 240/12 1600 SKN 100/16 SKN 130/16 SKN 240/16 200 SKR 100/02 SKR 130/02* SKR 240/02 400 SKR 100/04 SKR 130/04* SKR 240/04 800 SKR 100/08 SKR 130/08* SKR 240/08 1200 SKR 100/12 SKR 130/12* SKR 240/12 1600 SKR 100/16 SKR 130/16* SKR 240/16 Symbol) Conditions SKN 100 SKN 130 SKN 240 SKR 100 SKR 130 SKR 240 IFAV sin. 180; Tease = 100 C 125A 165A 320A = 125C | 100A 130A 240A IFsM Ty = 25C 10 ms! 1750 A 2500 A 6000 A Ty = 180 C + 1500 A 2000 A 5000 A it Ty= 25C 15000 As | 31000 As | 180000 A?s Ty = 180 C 11500 As | 20000 As | 125000 As Qr Ty = 160 C; dir A ors 10 us typ. 100 nC typ. 120 nC typ. 200 nC In Ty = 25C; Vr = VRRM 1mA imA 2mA Ty = 180 C; Vr = VARM 15mA 22 mA 60 mA Ve Ty = 25C; (IF = ...); max. 1,55 V (400 A)| 1,5 V (500 A) | 1,4 V (750 A) Vitoy_- | Ty = 180 C 0,85 V 0,85 V 0,85 V IT Ty = 180 C 1,8 mQ 1,3 mQ 0,6 mQ Rihjc 0,45 C/W 0,35 C/W 0,20 C/W Riheh ooscrw | 0,08 C/W | 0,03 C/W Ty 40... + 180C Tstg 55 ... + 180 C M Sl units/US units |10 Nm/90 Ib. in.j10 Nm/90 Ib. in! 30Nm/270lb.in a 5+ 9,81 m/s* | 5-9,81 m/s | 5 - 9,81 m/s? w approx. 100g 100g 250g RC Pra= 2W 0,25 uF + 50 Q/0,25 uF + 50 Q} 0,5 pF + 3002 Rp PR =20W 50 kO 50 kQ 50 kQ Case E13 E14 E15 or 1/2~20 UNF 2 A (e.g. SKR 130/02 UNF) _ * available with UNF threads 3/824 UNF 2 A (e.g. SKR 130/02 UNF 3/8) Rectifier Diodes SKN100 SKR100 SKN130 SKR130 SKN 240 _SKR 240 - TO1-% | > ~ i, 2 & - = 3 wW6 SKN SKR Features Reverse voltages up to 1600 V e Hermetic metal cases with glass insulators e Threaded studs ISO M 12, M16 x 1,5 (SKR 130 also 1/2-20 UNF or 3/8-24 UNF) e SKN: anode to stud; SKR: cathode to stud Typical Applications All-purpose mean power rectifier diodes e Cooling via heatsinks Non-controllable and half-controllable rectifiers e Free-wheeling diodes by SEMIKRON B827SUE D MM 8236671 0009867 THS MSEKG SEMIKRON INC y-oi-21 - [ -SKN 100141400 SKR 100 rec.120 pin 410 rec.60 -120 -130 140 Fray Qo 0 tray 50 100 A 0 Tamb 50 100 Fig. 1a Power dissipation vs. forward current and case temperature 250 ; W SKN 130 SKR 130 50 fay 9 Iray 50 100 150 A 0 Tamb 50 Fig. 1b Power dissipation vs. forward current and case temperature 100 400 Ww Trav %5 lrav 100 200 300 A 90 Tomb 50 100 Fig. 1 Power dissipation vs. forward current and case temperature B8-28 by SEMIKRONSIE D MM 4136671 0003464 445 MESEKG SEMIKRON SEMIKRON INC 150 100 50 SKN 100 'ray SKR 100 0 0 Tcase 50 100 150 200 Fig. 3a Rated forward current vs. case temperature 400 A 300 200 100 240 240 Ira 0 Tease 50 100 150 200 Fig. 3c Rated forward current vs. case temperature 0,5 |L_ SKN 130 SKR 130 0,4 0,3 0,2 0, Z(th)t 03 t 10- 101 Fig. 5b Transient thermal impedance vs. time s 102 T-O1l-21 200 150 100 50 130 tray 130 9 0 Tease 50 100 150 200 Fig. 3b Rated forward current vs. case temperature 075 $ SKN 100 SKR 100 0,5 0,25 Z(th)t 19-5 t 10 io1 Fig.5a Transient thermal impedance vs. time 0,3 /| SKN 240 SKR 240 0,2 0, Zithit 10-1 109 10! 10-2 Fig. 5c Transient thermal impedance vs. time 0 103 s 102 s 102 by SEMIKRON B8-29SLE D MM 4136671 00038659 411 MBSEKG SEMIKRON INC 400 SKN 100 SKR 100 300 200 vj = 160 26 160 25 OC 100 ip 0 0 Ve 0,5 1 1,6 V2 Fig. 6 a Forward characteristics 1000 A 240 6 SKR 240 600 400 Ty = 160 25 160 25 200 ip % Ye 0,5 1 4,5 V2 Fig. 6 c Forward characteristics T-01-21 500 400 300 200 if 25 160 25 C 100 ip %9 Vp 08 1 16 Fig. 6 b Forward characteristics 46 14 1,2 08 06 o4 t io! 102 Fig. 7 Surge overload current vs. time =180 C 1500 2000 5000 ms 103 B8-30 by SEMIKRON