APTM20DHM08 Asymmetrical - bridge MOSFET Power Module VDSS = 200V RDSon = 8mW max @ Tj = 25C ID = 208A @ Tc = 25C Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features * * * * OUT1 G1 VBUS Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits 0/VBUS S1 S4 G4 OUT2 * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 200 208 155 832 30 8 781 100 50 3000 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTM20DHM08 - Rev 1 May, 2004 Symbol VDSS APTM20DHM08 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375A Min 200 Typ Tj = 25C Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V Tj = 125C 3 Max Unit V 150 750 8 5 150 mW V nA Max Unit A Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 208A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 106 134 32 Inductive switching @ 125C VGS = 15V VBus = 133V ID = 208A RG = 2.5W Rise Time Typ 14.4 4.66 0.30 280 64 ns 88 116 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 1698 J 1858 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5 1872 J 1972 Diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt = 400A/s IF = 200A VR = 133V di/dt = 400A/s Min Tj = 125C Typ 200 1 1.4 0.9 Tj = 25C 60 Tj = 125C 110 Tj = 25C 400 Tj = 125C 1680 Tc = 75C Max Unit A 1.1 V ns nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com 2-6 APTM20DHM08 - Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM20DHM08 Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.16 0.32 Unit C/W V 150 125 100 5 3.5 280 C N.m g APT website - http://www.advancedpower.com 3-6 APTM20DHM08 - Rev 1 May, 2004 Package outline APTM20DHM08 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 600 10V 500 9V 400 8.5V 300 8V 7.5V 200 7V 100 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25C 100 TJ=125C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to VGS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55C 0 VGS=10V 1 VGS=20V 0.9 0.8 200 150 100 50 0 0 50 100 150 200 ID, Drain Current (A) 250 300 25 50 75 100 125 150 TC, Case Temperature (C) APT website - http://www.advancedpower.com 4-6 APTM20DHM08 - Rev 1 May, 2004 ID, Drain Current (A) Transfert Characteristics 600 ID, Drain Current (A) 700 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100s 100 1ms 10ms 10 100ms Single pulse TJ=150C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) 0 TJ, Junction Temperature (C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25C VDS=100V 10 8 VDS=160V 6 4 2 0 0 40 APT website - http://www.advancedpower.com 80 120 160 200 240 280 320 Gate Charge (nC) 5-6 APTM20DHM08 - Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20DHM08 APTM20DHM08 Delay Times vs Current Rise and Fall times vs Current 160 120 td(on) 40 tr and tf (ns) 100 80 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) 0 6 3 Eoff Eon 2 1 Switching Energy (mJ) VDS=133V RG=2.5 TJ=125C L=100H 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 4 0 VDS=133V ID=208A TJ=125C L=100H 5 Eoff 4 3 Eon 2 1 0 50 100 150 200 250 300 350 0 5 ID, Drain Current (A) 200 150 100 50 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 15 20 25 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=2.5 TJ=125C 250 10 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Frequency (kHz) tf 1000 TJ=150C 100 TJ=25C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTM20DHM08 - Rev 1 May, 2004 td(on) and td(off) (ns) 60 120 td(off) VDS=133V RG=2.5 TJ=125C L=100H 80 20 Eon and Eoff (mJ) VDS=133V RG=2.5 TJ=125C L=100H 140 100