MIL SPECS 1. SCOPE Joooo1es oorasas a MIiL-5 3 Apr MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON JANIN5624 THROUGH JAN1N5627 -19500/432 (USAF) mh Lt AND JANTX1N5624 THROUGH JANTX1N5627 1.1 Scope - This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment circuits (see 6.2). The prefix "Tx! identifies devices meeting the special process- conditioning, testing, and screening requirements in 4.5 herein. 1.2 Physical dimensions - See Figure l. 1.3 Characteristics and ratings - Io @ Ta=|Io @ Tali (surge)| @j-L 65C toj=100C {@ Ip=2.5A | (.375 TYPE | VR | Vpm |+55C Ta=+100C |from body)! try (wkg) tp=8.3msec| (Max) 1/3/ 2/3/ Vdel V Adc Ade ade c/Watt [asec 1N5624 200] 200 3.5 2.5 125 18 5 1N5625 400] 400 3.5 2.5 125 18 5 1N5626| 600/ 600 3.5 2.5 125 18 5 1N5627| 800{ 800 3.5 2.5 125 18 5 OPERATING TEMPERATURE: Ta=65C to +200C STORAGE TEMPERATURE: Tg=-659C to +200C BAROMETRIC PRESSURE, REDUCED (high altitude operation): i/ From 3.5A at Ta=+55C to 2.5A at Ta=+100C, 1N5624, 1N5625, INS 1N5627 linearly at 0.0224/c. 626 = 8mm Hg (100 33mm Hg ( 70 ,000 ft.) ,000 ft.) derate 2/ From 2.5A at Ta=+100C, to OA at Ta=+200C, derate linearly at 0.025/c. 3/ No heat sinking or forced air shall be allowed across the body for the Ig ratings. FSC 5 961MIL-S-19500/432 (USAF) 2. 3. 4 MIL SPECS Ic Boooo1es o013590 8 , @ po Tt A eee C DIMENSIONS 0 INCHES MILLIMETERS : LTR MIN. MAX. | MIN. MAX. s A .200 . 260 5.080 6.600 1, 3 B .160 . 230 4.064 5.840 1 C 90 1.25 22.86 31.75 1, 2 D .049 .053 1,24 1.35 1, 2 E -0- 030 -0- .762 1, 4 NOTES: 1. Metric equivalents (to the nearest .0lmm) are given for general information only and are based upon 1 inch = 25.4 m. Both leads shall be within the specified limits. See paragraph 3.5 for marking requirements. The lead diameter is uncontrolled in this area. FIGURE 1. Outline and Dimensions2.1 3.2 3.3 MIL SPECS T Joooo1es 0013551 7 J MIL-S$-19500/432 (USAF) APPLICABLE DOCUMENTS The following documents, of the issu2 in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein: SPECIFICATION MILITARY MIL-S$-19500 - Semidonductor Devices, General Specification For. STANDARD MILITARY MIL-STD-750 - Test methods for semiconductor devices. MIL-STD-202 - Test methods for electric and electrical component parts. (Copies of specifications, standards, drawings, and publi- cations required by contractors in connection with speci- fic procurement functions should be obtained from the procuring agency or as directed by the contracting officer. Both the title and number or symbol should be stipulated when requesting copies.) REQUIREMENTS General - Requirements for diodes shall be in accordance with Specification MIL-S-19500 and as otherwise specified herein. Abbreviations, symbols, and definitions - The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. Design and construction - The diodes shall be of the design, construction, and physical dimensions specified in Figure 1 and as otherwise specified herein.MIL SPECS Ic gooooies O01354e 1 g MIL-S-19500/432 (USAF) 3.3.1 3.5. 3.5. Jl 1 2 Operating position - The diodes shall be capable of proper operation in any position. Performance characteristics - The diode performance characteristics shall be as specified in Tables I, II, and III. Process-conditioning, testing, and screening for tpt types - The procedure for process~conditioning, testing and screening the "TX" types shall be as specified in 4.5 through 4.5.8. Marking - The following marking specified in MIL-S-19500 may be omitted at the option of the manufacturer: (a) Manufacturer's identification (b) Country of origin (c) Component designation (1N) (d) Inspection lot identification code Type designation - It is permissible to have the type designation on more than one line as follows: Js or JX5 Illustration shows marking for 624 624 typical 1N5624 device. Polarity - The polarity shall be indicated with a contrasting color band to derate the cathode end. Quality assurance provisions Sampling and inspection - Sampling and inspection shall be in accordance with MIL-S-19500 and as specified herein.4.2 4.2.1 4.2.2 4.2.3 4.3 4.3.1 4.3.2 MIL-S-19500/432 (USAF) MIL SPECS T Joooo1es oo1assa a ff Qualification inspection - Qualification inspection shall consist of the examinations and tests specified in Tables I, II, and III. Group A inspection - Group A inspection shall consist of the examinations and tests shown in Table I and shall be performed on an inspection sublot of each type. Group B inspection - Group B inspection shall consist of the examinations and tests shown in Table II. Subgroups 1, 2, 3, and 4 of Group B inspection and Subgroup 2 of Group C inspection may be performed on an inspection sub- lot of any type to qualify all types. Subgroups 6 and 7 of Group B inspection shall be performed on an inspection sublot of the highest voltage type being qualified. Sub- group 1 of Group C shall be performed on the highest vol- tage type within a barometric pressure group to qualify that type and all lower voltage types within this baro~ metric pressure group. Subgroup 3 of Group C shall be performed on an inspection sublot for each voltage type of the highest and lowest voltage units being qualified. Qualification testing ~ The non TX types shall be used for qualification testing. At the manufacturers request to the qualifying activity, qualification will be extended to include the TX type of the device. Quality conformance inspection - Quality conformance inspection shall consist of the examinations and tests specified in Tables I, II, III, and IV. Group A inspection - Group A inspection shall consist of the examinations and tests specified in Table I. Group A inspection shall be conducted on an inspection sublot of each type. Group B inspection - Group B inspection shall consist of the examinations and tests specified in Table II. Group B inspection may be done on a lot basis with the exception of subgroups 6 and 7. For subgroups 6 and 7, subgroups of the highest and lowest voltage types present in the lot shall be used to accept that type and all intermediate voltage types.MIL SPECS Ic Joooo1es Q02R3594 5 i MIL-S$-19500/432 (USAF) 4.3.3 4.4 4.4.1, 4.4.2 Group C inspection ~ Group C inspection shall consist of the examinations and tests specified in Table III and shall be performed on every 10th lot or every 6 months, which- ever comes first. Group C inspection may be performed on a lot basis with the exception of subgroup 1 which shall be performed on a sublot of the highest voltage type with- in a barometric pressure group, to accept that type and all lower voltage types within this barometric pressure group. If a lot contains a higher voltage type than has previously been accepted to subgroup 1 in the current 6 month period, this higher voltage type shall be subjected to subgroup 1 inspection. Methods of examination and test - Methods of examination and test shall be as specified in Tables I, II, III, WV, and as follows. Reverse recovery time - The reverse recovery time shall be measured in the circuit of Figure 2 or equivalent. The pulse generator shall have a pulse repetition fre- quency of 1 KHz maximum and a pulse width of 10 nsec mini- mum. The recovery conditions shall be as follows: 0.5 amp forward current to 1.0 amp reverse current. The recovery time shall be measured when the rectifier re- covers to -0.25 amps. Point of contact on leads shall be no less than 3/8" from the diode body. Thermal impedance - Thermal impedance shall be measured in accordance with general requirements of Standard MIL-STD-750, Method 3151, Figure 4A and 4B herein @md as specified herein. The high temperature point shall be 100C. The low tempera- ture test shall be performed at room ambient conditions with the device mounted in an infinite heat sink. The heat sink shall be attached to the lead at a point that is .375 inches from thebody of the device. The rectifier under test shall be protected in such a manner that no draft or forced-air flow shall flow across the body of the device. The procedure will be as shown in Figure GA.4.4.3 4.4.4 4.4.5 4.5 MIL SPECS I [oooo12s oo1asss 7 i MIL-S-19500/432 (USAF) Scope display - The sample devices under Table II, Group B inspection, Subgroup 5 shall be tested to the following requirements. The devices shall be subjected to scope display evaluation as described in paragraph 4.5.7 herein with the additional following requirements. Ip over the knee shall be equal to or greater than 50 micro amps. Any device exhibiting rejection characteristics as described in paragraph 4.5.7 shall be considered a failure. Steady state operation life test ~ This test shall be con- ducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction, followed by a half-sine waveform of the specified average rectifier current. The forward conduction angle of the rectified current shall not be greater than 180 nor less than 150 and the power shall be equal to or greater than that of a half-sine wave. Mounting method shall utilize a clip type connection; no heat sink nor forced-air flow across the body of the device shall be employed. Resistance to solvents - Diodes shall be subjected to tests in accordance with Method 215 of MIL-STD-202. The following details shall apply: (a) All areas of the diode body where marking has been applied shall be brushed. (b) After subjection to the tests, there shall be no evidence of mechanical damage to the device and markings shall have remained legible. Process-conditioning, testing, and screening for "TX! devices - The procedure for process-conditioning, testing, and screening the "TX" types shall be in accordance with 4.5.8 and Figure 3. Process conditioning shall be con- ducted on 100 percent of the lot prior to submission of the lot to the tests specified in Tables I, II, and III. (At the option of the manufacturer, the non TX types may be subjected to process-conditioning and testing.)MIL-5 4.5.1 4.5.2 MIL SPECS Tc Jfoooo12s o0135%4 4 i -19500/432 (USAF) Quality assurance records and determinants - The manufac- turer shall maintain and make available for perusal and review at any time, during a period of three (3) years minimum, to any authorized Government Representative or other contracting customer concerned, complete lot-by-lot records for these devices. All devices that fail to meet the process-conditioning, testing and screening require- ments specified herein shall be removed from the respec- tive lot and the test-failure identity and quantity removed shall be recorded in the permanent lot history. High temperature storage - The devices shall be stored for at least twenty-four (24) hours at a minimum temperature (Ta) of +200C. 4.5.3 4.5.4 4.5.5 4.5.5.1 4.5.5.2 Thermal shock (temperature cycling) - The semiconductor diodes shall be subjected to temperature cycling (thermal shock) in accordance with MIL-STD-750, Method 1051, Test Condition C, except that cycling duration shall be ten (10) continuous cycles and exposure time at temperature extremes shall be fifteen (15) minutes minimum. Acceleration = All devices shall be subjected to the acceleration test in accordance with MIL-STD-750, Method 2006, with the following exceptions: The test shall be performed onetime in the Y) orientation only, at a peak level of 10,000G minimum. The one-minute hold-time requirement shall not apply. Hermetic seal tests - All devices shall be subjected to hermetic seal tests (fine leak followed by gross leak) with test conditions as specified in 4.5.5.1, 4.5.5.2, or 4.5.5.3. Fine Leak Test ~ All devices shall be fine-leak tested in accordance with MIL-STD-750, Method 1071, test condition G or H. Gross leak test (bubble) - All devices shall be tested for gross leaks in accordance with MIL-STD-750, Method 1071, test condition D, except that the solution may be any suitable non-corrosive liquid at a minimum tempera- ture of 100.MIL SPECS Tc ogooo1es o0135"97 0 i 4.5.5.3 4.5.6 4.5.6.1 MIL-S-19500/432 (USAF) Gross leak test (penetrant dye) - All devices shall be tested for gross leaks in accordance with MIL-STD-750, Method 1071, test condition E. After the alcohol rinse and drying cycle, non-transparent devices shall be exam- ined by placing them or: a clean white platter and observing for any evidence of dye. Burn-in conditioning, tests, and evaluation (screening) - To enable proper evaluation of the diodes conditioned and tested in accordance with the following requirements, each diode and lot shall be handled or identified in such man- ner that delta data/results for each individual diode and lot can be ascertained and recorded. Pre burn-in measurements - The diodes shall be tested for _the characteristics Vp and Ip (at room ambient Ty), listed 4.5.6.2 4.5.6.3 in Table IV below, and the values found shall be recorded. Those diodes that fail to meet the specified limits shall be rejected and removed from the lot. Burn-in conditioning - The diodes shall be energized and operated for 164 hours minimum, under the following con- ditions and those specified in 4.3.6 herein. Ta=t+55C I9=3 -5A VeM(wkg) = full rated (see paragraph 1.3) f=60H, Post burn-in tests and measurements - After burn-in condi-~ tioning, the diodes shall be permitted to return to room ambient temperature (thermal equilibrium) and shall be re- tested, within a maximum total elapsed time of eight (8) hours, for the characteristics Vp and Ip, and Ip at Ta = 150C, per Table IV herein. The values for Vp and Ip on each individual diode shall not exceed the following delta limits: A Vr = + 0.1 Vde Alg (at Ta=room ambient): +250nA, maximumMIL SPECS T Jooo0125 o01355a 2 T MIL-S-19500/432 (USAF) 4.5.7 4.5.8 Scope-display evaluation - (a) The breakdown characteristics, at rated Vp (at room ambient temperature), of the device shall be viewed graphically on an oscilloscope of display sensitivity: 202 A/cm (max.) vertical, 200V/cm (max.) horizontal. (b) Each device, when viewed on the oscilloscope, shall present sharp knee characteristics. Any discontinuity or dynamic instability of the trace shall be cause for rejection. Process-conditioning evaluation (screening) - Those diodes * whose measured characteristics exceed the delta (A) limits specified in 4.5.6.3 above, or the limits of Table IV or fail scope-display evaluation (see 4.5.7 above), shall be rejected and removed from the lot. Where a total of 10% or more of the diodes subjected to the burn-in test are found to exceed those limits, the entire lot shall be considered non=acceptable as "TX" Devices. 10MIL SPECS 1 Joooo1es oo1ass7 4 & MIL-S-19500/432 (USAF) TABLE I. Group A inspection Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX Symbol | Min, | Max. | Unit Subgroup 1 5 Visual and 2071 <= --- ome cee mechanical examination Subgroup 2 5 Forward Voltage} 4011 | DC Current Ip=3.5 Adc 1N5624 VF 0.6 1.0 | Vde 1N5625 VE 0.6 1.0 | Vde 1N5626 VF 0.6 1.0 | Vde 1N5627 VP 0.6 {| 1.0 | Vde Reverse current | 4016 DC method 1N5624 Vp=200Vde Ip --- 1.0 | pAdec 1N5625 Vp=400Vde Ip --- 1.0 | pAdc 1N5626 Vp=600Vdec Ip won 1.0 | pAde 1N5627 VR=800Vdc IR ee 1.0 |MAdc Reverse current | 4016 | Ta=+150C (high temp.) DC method 1N5624 Vr=200Vde IR --- 100 peAde 1N5625 Vra=400Vde IR --- 100 Ade 1N5626 VR=600Vdc IR --- 100 | &Adc 1N5627 Vp=800Vdc IR oo: 100 | Ade Reverse Test circuit and recovery time test conditions nomograph per figure 3 herein. (paragraph 4.4.1) 1N5624 trr --- 5 pesec 1N5625 trr o- 5 psec 1N5626 trr woe 5 psec 1N5627 trr --- 5 pt sec llMIL SPECS 1 foooo12s oo1s.00 7 & MIL-S-19500/432 (USAF) TABLE I. Group A inspection - Continued Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX TX | Symbol | Min. | Max.| Unit Breakdown Voltage 4021 1N5624 Tp=50 LA BV 240 -o- Vde 1N5625 TR=50 MWA BV 460 --- Vde 1N5626 TR=50/A BV 660 o-- Vde 1N5627 Tp=50MA BV 880 we- Vde 12MIL SPECS MiIL-S-L9500/452 (UDAE ) TABLE II. Group B inspection I poooo125 0013401 49 T Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX | TX | Symbol | Min. | Max. | Unit Subgroup 1 5 5 Physical 2066 (see Figure 1) oe sce [eee --- dimensions Subgroup 2 10 10 Solderability 2026 Soldering heat 2031 20 cycles per wor one oo --- lead dwell time =30 sec. Temperature 1051 Test Condition co --- -- oc cycling 10 cycles Thermal shock 1056 | Test Condition B ce --- --- --- (glass strain) low temp.-65C high temp.+200C Seal 1071 Test Condition G 1X (leak rate) or H for fine 10-8 | am leaks. Test cone 1X cc/sec dition D or E 10-4 | aT for gross leaks. ec/sec (paragraph 4.5.5) Moisture 1021 |No initial wen --- ous wee resistance conditioning End-point tests: Same as established in Table IV. 13MLL SPECS MIL~-S-19500/432 (USAF) TABLE II. Group B inspection - continued IC poooo1es do1s.o2 0 &j 14 Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX | TX} Symbol | Min. | Max. | Unit i Subgroup 3 10 10 Shock 2016 | Non-operating 2500G, 5 blows of 0.5 msec each in orientations X1, Yi, Y2 (total=15 blows) Vibration 2056 aoe _ --- ene variable frequency Constant 2006 20,000G --- --- wee oo acceleration orientations Xl, Yu, Y2 End-point tests: Same as established in Table IV Subgroup 4 10 10 Terminal 2036 Test Condition E a --- strength (lead fatigue) (No End-points) Weight = 2 lbs + 1 oz.MIL SPECS Ic Gooco1es 0013603 MIL-S$-19500/432 (USAF) TABLE Il. Group B inspection - Continued Examination MIL-STD-750 LTPD Limits or Test Non Method Details T | TX | Symbol | Min. | Max. | Unit Subgroup 5 10 5 Thermal 3151 | Paragraph 4.4.2 6 j-L | --- 18 | c/w resistance Surge current 4066 ig(surge=125A) wee | wwe | eee --- Scope display/ internal arcing End-point tests: Same as established in Table IV Subgroup 6 High temperature life (non- operating) End-point tests: Same as established in Table IV herein plus scope display evaluation 10 surges of 8.3 msec each at leminute intervals Superimpose on: Ig=2.5 Adc Vem (wkg) =rated (for each type), at TA=+100C Paragraph 4.5.7 1031 | Ta=+200C re eee ee ee 15MIL SPECS Ic oooo1es OO13bL04 4 I MIL-S-19500/432 (USAF) TABLE Il. Group B inspection - Continued Examination MIL-STD-750 LTIPD Limits or Test Non Method Details tx | TX | Symbol | Min. | Max. | Unit Subgroup 7 A=5 jA=5 Steady state 1026 | Ta=55C --- ene | oe --- operation life Ip=3.5 Ade f=60 H, Vp (wkg) =rated (for each type) Paragraph 4.4.4 End-point tests: Same as established in Table IV plus scope display evaluation 16MIL SPECS TABLE III. Group C inspection Ic Bocoo1es 0013605 6 iE MIL-S-19500/432 (USAF) Examination MIL-STD-750 LTPD Limits or Test Non Method Details T | TX | Symbol | Min. | Max. | Unit Subgroup 1 7 Barometric 1001 |For 1N5624,5,6 ene | eee | wee | cee pressure Pressure=8 mm Hg reduced For 1N5627 (altitude Pressure=33 mm Hg operation) t=1 min. minimum Paragraph 1.3 Measurement during test: Reverse Current | 4016 |Vp=rated (for Ip --- 1.0 | pAde each type) Ta=room ambient Subgroup 2 10 Salt atmosphere 1041 one oe --- --- w-o- (corrosion) Subgroup 3 7 Low temperature Ta=65C operation: Forward voltage} 4011 |Ip=3.5 Adc VF o<e 1.5 | Vde Breakdown 4021 voltage : . 1N5624 Ip=50 A BV 200 | --- | Vde 1N5625 Ip=50 A BV 400 | --- | Vde 1N5626 Ip=50 A BV 600 | --- | Vde 1N5627 Ip=50 A BV 800 | --- | Vde 17MIL SPECS MIL-S-19500/432 (USAF) IC Bcooo1es OO1ZbO0b 8 i End-point tests: Same as established in Table IV TABLE III. Group C inspection - Continued Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX | TX | Symbol | Min. |Max. | Unit Subgroup 4 10 7 Temperature 1051 | Test Condition cycling C-l 18MIL SPECS IC cooo1es oo13b07 T & MIL-8-19500/432 (USAF) TABLE IV. Test and measurements Examination MIL-STD-750 LTPD Limits or Test Non Method Details TX Symbol | Min.| Max. | Unit Forward voltage | 4011 | Ip=3.5 Adc 1N5624 VF 0.6 1.1 Vde 1N5625 VF 0.6 1.1 Vde 1N5626 VF 0.6 1.1 | Vde 1N5627 VF 0.6 1.1 |Vde Reverse current 4016 1N5624 Vz=200Vde Ir oon 1.0 \pAdc 1Nn5625 VR=400Vde Ip oon 1.0 Adc 1N5626 Van=600Vdc IR woe 1.0 |wAde 1N5627 Vr=800Vde Ir ore 1.0 bAdc 19MIL SPECS Ic gooooies 0013608 i a MIL-S-19500/432 (USAF) 7 50 3 10 N.I. N.I. MA- AWA (-) 26 Vde PULSE (Approx. ) GENERATOR N. (+) Oscilloscope NOTES: 1. Oscilloscope: Rise time < 7 nsec; input impedance = 1 Meg; 22 pf 2. Pulse Generator: Rise time < 10 nsec; source impedance = 509 w itr -_ +0.5A ' 0 > -0.25A L -1.0A Set Time Base ap for 500 nsec/cm 0 1000 REVERSE RECOVERY TIME TEST CIRCUIT AND CHARACTERISTIC NOMOGRAPH FIGURE 2MIL SPECS Ic Gcooo1es 00136049 43 i MIL-S~-19500/432 (USAF) INSPECTION LOT FORMED AFTER FINAL ASSEMBLY LOTS PROPOSED J OPERATION ee FOR GROUP A GROUP B (SEALING) JAN TYPES GROUP C LOTS PROPOSED REVIEW OF FOR JAN TX TYPES INSPECTION TESTS TO VERIFY LTPD 100% PROCESS CONDITIONING* . High-temperature storage . Temp-cycling (thermal shock) . Constant acceleration . Seal or hermeticity (See item 3, scope display requirement, in box below) GROUPS A, B, C, DATA FOR ACCEPT OR REJECT t PREPARATION FOR DELIVERY bo 100% POWER BURN-IN* . Measurement of specified parameters . Burn-in . Measurement of specified parameter to determine delta (A) limits, then scope display . Lot evaluation INSPECTION TESTS TO VERIFY LTPD GROUP A GROUP B GROUP C REVIEW OF GROUPS A, B, C, DATA FOR ACCEPT PM oR REJECT *ORDER OF TESTS SHALL BE AS SHOWN WITHIN BLOCK PREPARATION FOR DELIVERY FIGURE 3. Flow Chart of non-TX and TX typesMIL-S-19500/432 (USAF) : MIL SPECS Ic Boooores OO13610 T I THERMAL RESISTANCE TEST FUNCTIONAL BLOCK DIAGRAM Push to test Read VF2 Normal @ Ip2 Only ro Operation pets] IF2 Constant Current GATING TRIGGER GENERATOR NETWORK NETWORK (O-15ade) 2/ 3/ 3/ Optional Trl . constant Current Switch 2/ DIGITAL VOLT GENERATOR METER (DVM) (10mAdc) 1/ 3/ Rok : R.U.T. NOTES: 1/ The same D.V.M. must be used for all Vp readings. 2/ Ip2 generator must be turned off or switched out of circuit for testing VF1l @ Ifi @ 100C. 3/ The trigger network, gating network, and D.V.M. must be capable of operating within the time limits specified in the timing diagram. See Figure 4B. PROCEDURE: 1. Place R.U.T, in high temperature test fixture. Read and record Vp] @ Ip. (10mAdc) @ Ta=100C (See Notes 1 and 2). 2. Place R.U.T. in infinite heat sink mounting at room ambient conditions (approximately 25C). R.U.T. shall be mounted as shown in mounting detail. See Figure 4B. 3. Apply Ip2 (0-15A supply) and allow to stablize for 2 30 seconds. Depress push to test switch and read Vr1 @ Ipl. Compare Vr) @ Ta (room ambient) reading with data recorded for VF1 @ Ta (100C). (See timing diagram - Figure 4B.) 4. Gradually increase Ip? (taking readings as described in procedure 3 above) until VF1 @ Ta (room ambient) = VF] @ Ta (100C). 5. Read and record Ve2 and Ip2. 6. Calculate Ti - T2 = TA(100C) - Ta (room ambient) 0} = Watts VF2 Ir2 6 = 73C = Thermal impedance junction to lead (.375 from body) in C/W. O VF2 - IF2 FIGURE 4A See paragraph 4.4.2IF2 (variable) FORWARD CURRENT IFl 10mAdc 0 MIL SPECS Ic Goooo1es OOL3b11 1 i MIL-$-19500/432 (USAF) > 30 seconds Stablization Period HEAT DISSIPATOR t=0 push to test TIMING DIAGRAM (See Note 3 and Procedure 3 and 4, Figure 4A) TL MOUNTING DETAIL t<150uSec t<llmSec t_>llmSec max, D.V.M. Sample release decay reading & push to time display test complete TIVE >> HEAT =z OTES: 1/ d shall be measured from the body of the DISSIPATOR device. Exposed portion of leads shall be free of paint, grease, or other coatings of any kind. *TYP, THERMAL IMPEDANCE CHART d @ j-L INCHES C/W 0.000 10 0.250 15 0.375 18 0.500 21 0.750 27 *For Use as Application FIGURE 48 23 Information OnlyMIL SPECS IC Boocoo.es Oouabl2 3 I MIL-S$~19500/432 (USAF) 5.1 6.3 7 6.4 6.5 6.6 PREPARATION FOR DELIVERY Preparation for delivery - Preparation for delivery and the inspection of preparation for delivery shall be in accordance with Specification MIL-S-19500. NOTES Notes - The notes included in Specification MIL-S-19500, with the following additions or exceptions, are applicable to this specification. Application guidance - To insure proper equipment-circuit application, particular attention should be given to the differential voltage and reverse-recovery-time ratings pertinent to the individual diode types covered herein. Ordering data - (a) Lot inspection data: See Paragraph 4.3. Procurement of TX types - See Paragraph 4.5. Qualitv assurance for "TX" types - It is expected that where the permanent lot record, maintained as required in 4.4.1 herein, begins to show a condition of failures in excess of the LTPD rate specified herein, or a condition of entire lot rejection (see 4.5.8 herein) is recorded, the Government procuring activity will determine any additional monitoring controls and evaluation criteria needed to attain restoration of the prescribed (herein) quality assurance for acceptance of product. Qualification - With respect to products requiring quali- fication, awards will be made only for such products as have, prior to the time set for opening of bids, been tested and approved for inclusion in Qualified Products List QPL-19500, whether or not such products have actually been so listed by that date. The activity responsible for the Qualified Products List is Rome Air Development Center, ATTN: EMNRB, Griffiss Air Force Base, New York 13440; howe ever, information pertaining to the qualification of pro- ducts may be obtained from the Defense Electronics Supply Center, 1507 Wilmington Pike, Dayton, Ohio 45401. 24MIL SPECS Ic Boocon.es 0013613 5 I MIL+$-1950U/432 (USAF) Custodian: Preparing activity: Air Force - 1? Air Force - 1? Review activities: Air Force - 11, 70, 85 (Project 5961-F291) 25