03/2006
AWT6137
HELPTM Cellular Dual Mode AMPS/CDMA
3.4V/28dBm Linear Power Amplifier Module
PRELIMINARY DA T A SHEET - Rev 1.4
M7 Package
10 Pin 4 mm x 4 mm x 1.55 mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• High Efficiency:
39% @ +28 dBm
20% @ +16 dBm
14% @ +7 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
•V
REF = +2.85 V (+2.7 V Min Over Temp.)
• Low Profile Surface Mount Package: 1.55 mm Max
• CDMA 1XR TT and 1xEV -DO Compliant
• RoHS-Compliant Package Option, 250 oC MSL-3
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6137 CDMA/AMPS Power Amplifier is a high
performance CDMA2000/ 1XRTT amplifier designed
specifically for Cellular wireless applications. This
rugged, easy to use InGaP HBT design delivers
state of the art efficiency and temperature stability
with very low DC power consumption. The
AWT6137 PA module has the lowest CDG currents
available to handset manufacturers today.
A combination of low idle current and mode
switching enables the AWT6137 to deliver
unparalleled CDMA average power efficiencies.
This bias feature allows the AWT6137 to significantly
increase the battery usage time of a mobile
handset. The device has mode-switching to take
advantage of its high efficiency operation over a wide
range of output powers. Higher low power efficiency
is achieved without an external DAC or DC-DC
converter. The integrated power amplifier module
employs a proprietary bias control and temperature
compensation circuit that assures stable operation,
even at extreme temperature conditions.
The self contained 4 mm x 4 mm x 1.55 mm surface
mount package incorporates matching networks
optimized for output power , ef ficiency and linearity in
a 50 Ω system making it easy to incorporate the
device into BOTH new and existing designs.
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
AWT6137