BF421ZL1G - ON Semiconductor

Publication Order Number:

BF421/D

July, 2010 − Rev. 5

BF421, BF423

High Voltage Transistors

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol BF421 BF423 Unit

Collector−Emitter Voltage VCEO −300 −250 Vdc

Collector−Base Voltage VCBO −300 −250 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−500 mAdc

Collector Current − Peak ICM 100 mA

Total Device Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

830

6.6

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

RqJA

150

°C/W

Thermal Resistance,

Junction−to−Lead

RqJL

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of

5 mm.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

MARKING

DIAGRAM

BF42x = Device Code

x = 1 or 3

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

TO−92

CASE 29

STYLE 14

COLLECTOR

BASE

EMITTER

42x

AYWW G

Device Package Shipping

ORDERING INFORMATION

(Note: Microdot may be in either location)

BF421ZL1G TO−92

(Pb−Free)

2000/Ammo Pack

BF423G TO−92

(Pb−Free)

5000 Units/Box

BF423ZL1G TO−92

(Pb−Free)

2000/Ammo Pack

123

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

BF421, BF423

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0) BF421

BF423

V(BR)CEO

−300

−250

−

Vdc

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0) BF421

BF423

V(BR)CBO

−300

−250

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0) BF421

BF423

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −200 Vdc, IE = 0) BF421

BF423

ICBO

−

−0.01

−

mAdc

Emitter Cutoff Current

(VEB = −5.0 Vdc, IC = 0) BF421

BF423

IEBO

−

−100

−

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −25 mA, VCE = −20 Vdc) BF421

BF423

hFE

−

Collector−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

VCE(sat) − −0.5 Vdc

Base −Emitter Saturation Voltage

(IC = −20 mA, IB = −2.0 mA)

VBE(sat) − −2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz)

fT60 −MHz

Common Emitter Feedback Capacitance

(VCB = −30 Vdc, IE = 0, f = 1.0 MHz)

Cre −2.8 pF

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

300

0.1 1.0 10

250

200

150

hFE, DC CURRENT GAIN

TJ = +125°C

25°C

-55°C

VCE = 10 Vdc

100

BF421, BF423

http://onsemi.com

Figure 2. Capacitance

IC, COLLECTOR CURRENT (mA)

150

TJ = 25°C

VCE = 20 Vdc

F = 20 MHz

f, CURRENT-GAIN — BANDWIDTH (MHz)

Figure 3. Current−Gain − Bandwidth

130

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

0.1

100

0.1

1.0 10 1000

Cib @ 1MHz

100

1.0

Ccb @ 1MHz

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.4

0.0

1.2

1.0

0.8

0.6

0.4

0.2

100100.1 1.0

110

3579 1917151311

VBE(on) @ 25°C, VCE = 10 V

VCE(sat) @ 25°C, IC/IB = 10

VBE(sat) @ 25°C, IC/IB = 10

VCE(sat) @ 125°C, IC/IB = 10

VCE(sat) @ -55°C, IC/IB = 10

VBE(sat) @ 125°C, IC/IB = 10

VBE(sat) @ -55°C, IC/IB = 10

VBE(on) @ 125°C, VCE = 10 V

VBE(on) @ -55°C, VCE = 10 V

Figure 4. ”ON” Voltages

Figure 5. Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

1000101

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

10 ms

100

1.0 s

BF421, BF423

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 029−11

ISSUE AM

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 ---

N2.04 2.66

P1.50 4.00

R2.93 ---

V3.43 ---

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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BF421/D

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