LORAL MICROWAVE-FSI Sic DD 5580130 0000458 ST? -T-OT-AA STEP RECOVERY DIODES DESCRIPTION The GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Strict material and process controls result in high reproducibility. A unique silicon dioxide passivation process assures greater reliability and low leakage currents at high temperatures. APPLICATIONS The GC2500 series of step recovery varactors are used as har- monic generators for all orders of multiplication X2 through X20 for both narrow and wide bandwidths. Applications in- clude local oscillators, voltage controlled oscillators, frequency synthesizers, and up converters. They are also used in comb generators to generate a broad frequency spectrum and in high speed pulse shaping circuits. ELECTRICAL SPECIFICATIONS Ta = 25C MINIMUM MINIMUM? MAXIMUM JUNCT. CAPACITANCE | BREAKDOWNVOLTAGE | CARRIER LIFETIME TYPICAL? SERIES RESISTANCE MAXIMUM? MODEL (AT -BV, 1 MHz) (AT 10nA MAX) (Ip = 6 mA, Ir = 10 mA) TRANSITION TIME (Ip = 25 mA) THERMAL RESISTANCE NUMBER Gu-6 (pF) Ve (V) Tuas) Tr (ps) Rs (OHMS) JC (CAN) GC2510 0.2-0.4 15 8 60 4.20 125 GC2511 0.4-0.6 15 8 60 1.00 100 GC2512 0.6-0.8 15 8 60 0.70 100 GC2513 0.8-1.0 15 8 60 0.50 75 GC2514 10-14 15 8 60 0.40 75 GC2515 14-2.0 15 8 60 0.30 60 GC2516 2.0-3.0 15 8 60 0.25 60 C2520 0.2-04 20 rT 70 1.00 100 GC2521 0.4-0.6 20 1" 70 0.70 75 602522 06-08 20 4 70 0.60 75 GC2523 08-10 20 "1 70 0.50 75 GC2524 1.0- 1:4 20 1 70 0.40 75 GC2525 14-20 20 1 70 0.30 60 GC2526 2.0 - 3.0 20 11 70 0.25 60 602530 02-04 30 17 100 0.80 75 GC2531 0.4-0.6 30 17 100 0.60 60 GC2532 0.6-0.8 30 17 100 0.50 60 GC2533 0.8-10 30 17 100 0.40 60 GC2534 10-14 30 17 100 0.30 60 GC2535 14-20 30 17 100 0.25 50 GC2536 2.0- 3.0 30 17 100 0.20 50 GC2540 02-04 40 21 150 0.80 60 Gc2541 04-06 40 21 150 0.60 50 GC2542 0.6-08 40 24 150 0.50 50 GC2543 08-10 40 21 150 040 50 GC2544 10-14 40 21 150 0.30 50 GC2545 14-20 40 24 150 0.25 40 GC2546 2.0-3.0 40 24 150 0.20 40 NOTES: 1. JUNCTION CAPACITANCE IS MEASURED AT 1 MHz ON A BOONTON METER MODEL 72 BD. 2. CARRIER LIFETIME IS MEASURED USING THE TEST CIRCUIT SHOWN IN FIGURE 1. 3. TRANSITION TIME (SNAP TIME) IS MEASURED USING THE TEST CIRCUIT SHOWN IN FIGURE 2. 4. SERIES RESISTANCE IS MEASURED USING A TRANSMISSION LOSS TECHNIQUE. 5. THERMAL RESISTANCE IS MEASURED USING PULSED CONDITIONS WHILE MEASURING FORWARD VOLTAGE DROP ACROSS THE DIODE MOUNTED IN AN INFINITE HEAT SINK. Diodes are available in various capacitance ranges for each of the 4 voltage ratings. These diodes represent the lowest tran- sition times (snap time) available for each voltage rating. Unless otherwise specified, capacitance will be within the range shown below for each type. A capacitance tolerance of +10% is available at an additional charge. Diodes can be optimized for custom electrical or mechanical specifications. Custom parameters for capacitance, voltage, transition time, series resistance, etc. are available upon request. All specifications shown above are based on the style 30 pack- age. Other ceramic or glass packages available include 15, 20, 25, 35, 36, 42 and 56. Chips mounted on carriers with gold wire/ribbon leads are also available. LORAL. Microwave - FSI 44 ~RATINGS Minimum Breakdown Voltage: 15, 20, 30 and 40 V at 10nA Storage Temperature: -65C to +200C Operating Temperature: -55C to +150CLORAL MICROWAVE-FSI STEP RECOVERY DIODES PERFORMANCE CARRIER LIFETIME TRANSITION TIME Tr <0.5 100% R < 0-6ns 0 boo _t mS: WAVE SHAPE \_f =10V | 0% el tusk ev _ TT ~ F v Tr 0% SAMPLING SCOP SAMPLING SCOPE r-T I CEH ToGo 7 TEKTRONIX TYPE 5603 ct WAVEFORM MONITOR 1K | WITH PULSE Tut PULSE GENERATOR | T bik GENERATOR 1.0mH | E&H | r | E&H 0.01] 0.01 1. TYPE 7T11 PG136A 1.0uf DUT PGI36A | at ut SAMPLING SWEEP 50 oHMot4L-3} gd 50 OHMOTIE TE FH BL to 2. TYPE 7811 |_*'100 OHM 4 SAMPLING UNIT ~~ ~~ 50 0Hm | DUT, 3. TYPE S-4 = | SAMPLING HEAD = L |_ TRIGGER TRIGGER So TRIGGER The value of the reverse current (IR) is approximately 6 mA and the forward The transition time is measured between the 80% and 20% points on the ob- current (IF) is 1.7 IR. The input pulse is provided by a pulse generator having a served wave shape. rise time of less than one nanosecond. Figure 1 Figure 2 TEST DATA All units are certified to meet complete electrical and mechanical specifications. Actual test data is provided for Vs, Ci-6, Fe-6, Tu, Tr. PACKAGE STYLES b so O16 NOM fk os D t Be p 38 peel an ee Fig el oss Oo SS oe i Max = | =z B a | TT GOLD CONTACT oo ee # aa e 8 zs Es } = D640 UNP-2A SOLD BACKING o05. NOM , 2 i nt {TOP MESA AND CHIP ~H HS Suz DEPENDS OM J se i SAE beer DIODE PARAMETERS ft aN eo 2 TOP 8 SOTTOM CONTACTS GOLD Cp SOF Lge. O6qH > TeF tp=Ad0H 3 CONSULT FACTORY Ep 876F Lpet Galt Style 00 Style 15 Style 20 Style 25 ot nel | LEADS ak ery wee bata a x DEG t Come i = | d a YT L xg =s ts i ard | tb i O27 MAX TAR cas uncon i | i MAX | $34 L s | Cp 18pF ps 42a 80 | 3 ome j Cow YheF Lpedent Cp 1BpF Lp= aZnH coe-sz0 Lemans Spe 50pF La BOnH Spline wcket avelistite upon ronuest, Style 30 Style 35 Style 36 Style 42 Style 55 (e) Heat sink end. Dimensions are in inches. Other Package Styles Are Available Upon Request The cathode is the heat sink end of each package. Reverse polarity is available at a slightly higher cost. LORAL Microwave - FSI 45