A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 25 mA 65 V
BVCER IC = 50 mA RBE = 10 Ω 65 V
BVEBO IE = 5.0 mA 3.5 V
ICES VCE = 50 V 60 mA
hFE VCE = 5.0 V IC = 2.0 A 10 250 ---
PG
η
ηη
ηC VCC = 50 V POUT = 600 W f = 1030 - 1090 MHz
PIN = 150 W
6.0
35
dB
%
Pulse width = 10 µsec, Duty Cycle = 1.0 %
NPN SILICON RF POWER TRANSISTOR
AVF600
DESCRIPTION:
The ASI AVF600 is a high power pulsed
transistor , designed for JFF avionics
applications. It is designed for oper ation
under short pulse width & low cycle and
capable of withstanding 25: 1 load
mismatch.
FEATURES:
• Internal Input/Output Matching Networks
• PG = 5.6 dB at 600W/1090 MHz
• Omnigold™ Metalization System
• CB operation
• 25:1 VSWR capabilit y
MAXIMUM RATINGS
IC 43 A
VCC 55 V
PDISS 1670 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 0.09 °C/W
PACKAGE STYLE .400 2L FLG (A)
ORDER CODE: ASI10576
MINIMUM
inch es / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inch es / m m
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
AVF600
IMPEDANCE DATA
FREQ ZIN(Ω) ZCL(Ω)
1025 MHz 3.7 + j4.5 0.9 – j1.6
1090 MHz 4.3 + j1.6 1.0 – j2.3
1150 MHz 2.8 + j1.6 0.8 – j2.0
PIN = 150 W
VCC = 50 V
