IRF250 = IRF254 = IRF252 = IRF253 Ss Siliconix : N-Channel Enhancement-Mode _ M O Sp OWER Advanced Information These power FETs are designed especially for offline switching regulators, power converters, solenoid and relay drivers. FEATURES Product Summary w= No Second Breakdown Part BV tree, \ Package a High Input Impedance Number oss | sen) . a Internal Drain-Source Diode |RF250 200 0.0889 | 30A m Very Rugged: Excellent SOA IRF 251 150 10-3 a Extremely Fast Switching IRF 252 200 0.1209 | 25a IRF253 150 BENEFITS a Reduced Component Count D a Improved Performance tel . . G a Simpler Designs aa a Improved Reliability s ABSOLUTE MAXIMUM RATINGS (Tc =25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak).............0.0000 aes + 3A IRF250, 252... 0... cece cee eee 200V IRF251,253............. ee 150V Gate-Source Voltage..............00.005 +40V : Total Power Dissipation ................. 150W Oe ate voltage 200V Linear Derating Factor .............. 1.2WIC IRF251, 253.0... 0.0... cee ee eee 150V Operating and Storage Drain Current Temperature ..............5. - 55to +150C Continuous Notes: IRF250, 251 ...........0800-- eee +30A 1. Limited by package dissipation. IRF252, 253 0... eee eee es +25A 2. Pulse test 80Hs to 300ys, 1% duty cycle. Pulsed?... 0... eee eee cent ee +120A PACKAGE DIMENSIONS 0.875 0.450 (71.43) bomen (22 225) aml 0.250 (6.25) 0.135 max MAX t (3.429) 1 312 = seatin cos coer ae < PRANE 1.197 (90.404) | Pin 1 Gate 0.675 - (17.145) [77 25.806 Pin 2 Source OBS (76.697) | CASE Drain Ss 2398, wax | U BOTH ENDS oaeo 77.176) | =e 0.420 (10.668) 0.161 (4.089) 0.225 (5.715) 0525 0,151 (3.835) 0.208 5.207} BOTTOM VIEW (13.335) R MAX TO-3 2-16 SiliconixELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Part . . 7 Parameter Number Min Max | Unit Test Conditions Static Drain-Source Breakdown IRF250, 252 | 200 BV, v Ves =0, Ip = 250nA 08S voltage IRF251, 253 | 150 as=0, In=2 Vasithy Gate Threshold Voltage All 2.0 | 4.0 Vv Ves= Vos, Ilp=1mA lass Gate-Body Leakage All +100 nA Ves= +20V, Vos =0 0.25 Vos = Rated Vps, Ves = 9 loss Zero Gate Voltage Drain Current All mA BS Ds, SS 1.0 Vps = Rated Vos, Veg = 0, Te = 125C loyon) On-State Drain Current Alt 30 A Vos = 25V, Veg = 10V (Note 1) Static Drain-Source On-State IRF250, 251 0.085 f Q Ves = 10V, Ip = 16A (Note 14 pSon) Resistance IRF 252, 253 0.120 $s 5 ( ) Dynamic Its Forward Transconductance All 8 S$ Vos = 12V, Ip = 16A (Note 1) Ciss Input Capacitance 3000 Coss Output Capacitance All 1200 pF Ves = 0, Vos = 25V, f= 1 MHz Criss Reverse Transfer Capacitance 500 taron) Turn-On Delay Time All 35 t Rise Time All 100 | ns. | Voo=75, Ip=16A, RL =7.59, Ry=4,79, taorn Turn-Off Delay Time All 125 (Figure 1) ty Fall Time All 100 Drain-Source Diode Characteristics Typ Vsp Forward On Voltage Alt -1.6 v Is = ~30A (Note 1) tre Reverse Recovery Time All 500 ns lp =-30A, Veg = 0, di/dt = 100A/us (Fig. 2) Note: 1. Pulse test: 80 ns to 300 us, 1% duty cycle. FIGURE 1 Switching Test Circuit FIGURE 2. Reverse Recovery Test Circuit AW 502 difdt ADJUST (1-27 2H) + 0.5 TO 50 uF IN4933 & F__ pk) ADJUST : Vout ~ Cs 9 2400 rm + > IN4001 14000 .Fa5 2 >t _ < | | ciRcurr R < 0.259 UNDER [GENERATOR] [TEST L = 0.01 pH P.W. = 1 ys Cg < 50 pF ig . le A DUTY CYCLE =1% s ae wv IN4723 2N4204 === SCOPE 6 FROM TRIGGER CKT ") Siliconix 2-17 eGzdal = ZSZsal = bSZal = OSZsal