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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FFA40UP35S 40 A, 350 V Ultrafast Diode Features Description * Ultrafast Recovery, trr < 55 ns (@ IF = 40 A) The FFA40UP35S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power swithching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. * Max. Forward Voltage, VF =1.6 V(Tc = 25oC) * Reverse Voltage: VRRM = 350 V * Avalanche Energy Rated * RoHS Compliant Applications * General Purpose * SMPS, Free-Wheeling Diode for Motor Application * Power Switching Circuits, Welder, UPS 1 2 1 3 TO-3PN 3 1. Anode 2. Cathode 3. Anode 2 1. Anode 2. Cathode 3. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Ratings 350 Unit V VRWM VR Working Peak Reverse Voltage 350 V DC Blocking Voltage 350 IF(AV) Average Rectified Forward Current V 40 IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave A 300 A TJ, TSTG Operating and Storage Temperature Range @ TC = 125oC o -65 to +175 C Thermal Characteristics Symbol RJC Parameter Ratings Maximum Thermal Resistance, Junction to Case 0.8 Unit o C/W Package Marking and Ordering Information Part Number Top Mark FFA40UP35STU F40UP35S (c)2008 Fairchild Semiconductor Corporation FFA40UP35S Rev. 1.8 Package Packing Method TO-3P Tube 1 Reel Size Tape Width Quantity N/A N/A 30 www.fairchildsemi.com FFA40UP35S -- Ultrafast Diode March 2016 Symbol Min. Typ. Max. Unit V F1 IF = 40 A IF = 40 A TC = 25oC TC = 125oC - - 1.6 1.5 V IR1 VR = 350 V VR = 350 V TC = 25oC TC = 125oC - - 100 500 A IF = 1 A, diF/dt = 100 A/s, VR = 30 V IF = 40 A, diF/dt = 200 A/s, VR = 230 V TC = 25oC - 26 28 53 55 ns ta tb Qrr IF = 40 A, diF/dt = 200 A/s, VR = 230V TC = 25oC - 17 11 36 - ns ns nC WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ trr Parameter Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform (c)2008 Fairchild Semiconductor Corporation FFA40UP35S Rev. 1.8 2 www.fairchildsemi.com FFA40UP35S -- Ultrafast Diode Electrical Characteristics TC = 25oC unless otherwise noted FFA40UP35S -- Ultrafast Diode Typical Performance Characteristics Figure 4. Typical Reverse Current vs. Reverse Voltage Figure 3. Typical Forward Voltage Drop vs. Forward Current 100 100 Reverse Current , IR [A] Forward Current, IF [A] 10 o 10 TC = 125 C o TC = 75 C o TC = 25 C 1 0.2 0.0 0.5 1.0 1.5 Forward Voltage, VF [V] Typical Capacitance at 0V = 530 pF Reverse Recovery Time, trr [s] Capacitances , Cj [pF] o TC = 25 C 10 100 200 Reverse Voltage, VR [V] 300 350 Figure 6. Typical Reverse Recovery Time vs. diF/dt 400 320 240 160 1 10 Reverse Voltage, VR [V] IF = 40A o TC = 125 C 40 o TC = 75 C 30 o TC = 25 C 20 100 100 200 300 diF/dt [A/s] 400 500 Figure 8. Forward Current Derating Curve Figure 7. Typical Reverse Recovery Current vs. diF/dt 10 100 8 Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 0.1 1E-3 2.0 480 o TC = 125 C o TC = 75 C 4 o TC = 25 C 2 IF = 40A 100 o TC = 75 C 50 560 6 1 0.01 Figure 5.Typical Junction Capacitance 80 0.1 o TC = 125 C 200 300 diF/dt [A/s] (c)2008 Fairchild Semiconductor Corporation FFA40UP35S Rev. 1.8 400 80 60 40 20 0 25 500 3 50 75 100 125 150 o Case temperature, TC [ C] 175 www.fairchildsemi.com FFA40UP35S -- Ultrafast Diode Typical Performance Characteristics (Continued) Figure 9. Transient Thermal Response Curve Thermal Response [ZJC] 2 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 0.02 o 1. ZJC(t) = 0.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 0.01 Single pulse 0.005 -5 10 (c)2008 Fairchild Semiconductor Corporation FFA40UP35S Rev. 1.8 t2 *Notes: -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3 20.10 19.70 16.96 16.56 18.90 18.50 3 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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