BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits * * * * * * High switching speed: trr = 0.8 s Low leakage current: IR = 3 pA Repetitive peak reverse voltage VRRM 85 V Low capacitance: Cd = 2 pF Small SMD plastic package AEC-Q101 qualified 3. Applications * * Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM Conditions Min Typ Max Unit repetitive peak reverse Tj = 25 C voltage - - 85 V IF forward current tp 300 s; 0.02; Tamb = 25 C - - 215 mA VR reverse voltage Tj = 25 C - - 75 V VF forward voltage IF = 150 mA; tp 300 s; 0.02; Tj = 25 C - - 1.25 V IR reverse current VR = 75 V; pulsed; Tj = 25 C - 0.003 5 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 ; IR(meas) = 1 mA; Tj = 25 C - 0.8 3 s BAS116GW Nexperia Low leakage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode Simplified outline 1 Graphic symbol 2 SOD123 K A sym001 6. Ordering information Table 3. Ordering information Type number BAS116GW Package Name Description Version SOD123 Plastic surface-mounted package; 2 leads SOD123 7. Marking Table 4. Marking codes Type number Marking code BAS116GW GB BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 2 / 11 BAS116GW Nexperia Low leakage switching diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage Tj = 25 C - 85 V VR reverse voltage - 75 V IF forward current tp 300 s; 0.02; Tamb = 25 C - 215 mA IFSM non-repetitive peak forward current tp = 1 s; Tj(init) = 25 C; square wave - 4 A tp = 1 ms; Tj(init) = 25 C; square wave - 1 A tp = 1 s; Tj(init) = 25 C; square wave - 0.5 A - 500 mA [1] - 357 mW [2] - 600 mW IFRM repetitive peak forward current Ptot total power dissipation Tamb 25 C Per device, one diode loaded Tj junction temperature - 150 C Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient In free air Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Min Typ Max Unit [1] - - 350 K/W [2] - - 210 K/W [3] - - 58 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm . Soldering point of cathode tab. BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 3 / 11 BAS116GW Nexperia Low leakage switching diode aaa-025046 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.50 0.33 0.25 0.20 0.10 0.05 10 0.01 0.02 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-025047 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.25 0.10 0.75 0.33 0.20 0.05 10 0 1 10-5 0.01 0.02 10-4 10-3 10-2 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 10-1 1 10 102 2 tp (s) 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 4 / 11 BAS116GW Nexperia Low leakage switching diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 1 mA; tp 300 s; 0.02; Tj = 25 C - - 0.9 V IF = 10 mA; tp 300 s; 0.02; Tj = 25 C - - 1 V IF = 50 mA; tp 300 s; 0.02; Tj = 25 C - - 1.1 V IF = 150 mA; tp 300 s; 0.02; Tj = 25 C - - 1.25 V VR = 75 V; pulsed; Tj = 25 C - 0.003 5 nA VR = 75 V; pulsed; Tj = 150 C - 3 80 nA IR reverse current Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 C - 2 - pF trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 ; IR(meas) = 1 mA; Tj = 25 C - 0.8 3 s aaa-022961 1 mlb754 102 IR (nA) IF (A) 10 (1) 10-1 (1) (2) (3) 1 (4) 10-2 10- 1 10-3 10-4 0.0 0.5 1.0 1.5 VF (V) Product data sheet 0 50 100 150 Tj (C) 200 VR = 75 V (1) Maximum values (2) Typical values Forward current as a function of forward voltage; typical values BAS116GW 10- 3 2.0 (1) Tj = 150 C (2) Tj = 85 C (3) Tj = 25 C (4) Tj = -40 C Fig. 3. (2) 10- 2 Fig. 4. Reverse current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 5 / 11 BAS116GW Nexperia Low leakage switching diode mbg526 2 mbg704 102 IFSM (A) Cd (pF) 10 1 1 0 0 5 10 15 VR (V) 10-1 20 102 10 103 tp (ms) 104 Based on square wave currents. Tj(init) = 25 C f = 1 MHz; Tamb = 25 C Fig. 5. 1 Diode capacitance as a function of reverse voltage; typical values Fig. 6. Non-repetitive peak forward current as a function of pulse duration; maximum values 11. Test information tr D.U.T. RS = 50 V = VR + IF x RS IF tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 mga881 VR (1) 90 % input signal output signal (1) IR = 1 mA Fig. 7. Reverse recovery time test circuit and waveforms Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 6 / 11 BAS116GW Nexperia Low leakage switching diode 12. Package outline 3.75 3.45 2.80 2.55 1.3 1.0 1 2 1.7 1.5 Dimensions in mm Fig. 8. 16-10-13 Package outline SOD123 13. Soldering SOD123 4.58 3.27 3.1 2.1 1.62 1.12 1.22 1.42 0.81 0.91 0.81 2.36 0.91 4.18 1.11 occupied area solder resist Cu pad solder paste Dimensions in mm Fig. 9. 1.11 16-05-10 16-08-31 sod123_fr Reflow soldering footprint for SOD123 BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 7 / 11 BAS116GW Nexperia Low leakage switching diode SOD123 7.5 2.65 2.5 2 4.5 3.5 2.55 2.4 1.2 occupied area solder resist solder land glue dot Dimensions in mm 0.33 1.2 16-09-02 16-09-06 sod123_fw Fig. 10. Wave soldering footprint for SOD123 BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 8 / 11 BAS116GW Nexperia Low leakage switching diode 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAS116GW v.2 20180405 Product data sheet - BAS116GW v.1 Modifications: BAS116GW v.1 BAS116GW Product data sheet * Unit corrected to nA in Table 7, reverse current at 150 C 20161124 Product data sheet - All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 9 / 11 BAS116GW Nexperia Low leakage switching diode for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 15. Legal information Right to make changes -- Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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BAS116GW Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 10 / 11 BAS116GW Nexperia Low leakage switching diode 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 5 11. Test information..........................................................6 12. Package outline.......................................................... 7 13. Soldering..................................................................... 7 14. Revision history..........................................................9 15. Legal information..................................................... 10 (c) Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 5 April 2018 BAS116GW Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2018 (c) Nexperia B.V. 2018. All rights reserved 11 / 11