BAS116GWJ - NEXPERIA - Datasheet.Live

BAS116GW

Low leakage switching diode

5 April 2018 Product data sheet

1. General description

Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•High switching speed: trr = 0.8 µs

•Low leakage current: IR = 3 pA

•Repetitive peak reverse voltage VRRM ≤ 85 V

•Low capacitance: Cd = 2 pF

•Small SMD plastic package

•AEC-Q101 qualified

3. Applications

•Low-leakage current applications

•General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak reverse

voltage

Tj = 25 °C - - 85 V

IFforward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 215 mA

VRreverse voltage Tj = 25 °C - - 75 V

VFforward voltage IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- - 1.25 V

IRreverse current VR = 75 V; pulsed; Tj = 25 °C - 0.003 5 nA

trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tj = 25 °C

- 0.8 3 µs

Nexperia BAS116GW

Low leakage switching diode

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K Cathode

2 A Anode

SOD123

sym001

K A

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BAS116GW SOD123 Plastic surface-mounted package; 2 leads SOD123

7. Marking

Table 4. Marking codes

Type number Marking code

BAS116GW GB

Product data sheet 5 April 2018 2 / 11

Nexperia BAS116GW

Low leakage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage

- 85 V

VRreverse voltage

Tj = 25 °C

- 75 V

IFforward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 215 mA

tp = 1 µs; Tj(init) = 25 °C; square wave - 4 A

tp = 1 ms; Tj(init) = 25 °C; square wave - 1 A

IFSM non-repetitive peak

forward current

tp = 1 s; Tj(init) = 25 °C; square wave - 0.5 A

IFRM repetitive peak forward

current

- 500 mA

Tamb ≤ 25 °C [1] - 357 mWPtot total power dissipation

[2] - 600 mW

Per device, one diode loaded

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - - 350 K/WRth(j-a) thermal resistance

from junction to

ambient

In free air

[2] - - 210 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

[3] - - 58 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm2.

[3] Soldering point of cathode tab.

Product data sheet 5 April 2018 3 / 11

Nexperia BAS116GW

Low leakage switching diode

aaa-025046

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.01

0.33

0.75

0.05

0.02

0.20

0.50

0.10

0.25

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-025047

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.01

0.02

0.05

0.20

0.10

0.25

0.33

0.50

0.75

FR4 PCB, mounting pad for cathode 1 cm2

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet 5 April 2018 4 / 11

Nexperia BAS116GW

Low leakage switching diode

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- - 0.9 V

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- - 1 V

IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- - 1.1 V

VFforward voltage

IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- - 1.25 V

VR = 75 V; pulsed; Tj = 25 °C - 0.003 5 nAIRreverse current

VR = 75 V; pulsed; Tj = 150 °C - 3 80 nA

Cddiode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - 2 - pF

trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tj = 25 °C

- 0.8 3 µs

aaa-022961

10-3

10-2

10-1

(A)

10-4

VF (V)

0.0 2.01.50.5 1.0

(1)

(2)

(3)

(4)

(1) Tj = 150 °C

(2) Tj = 85 °C

(3) Tj = 25 °C

(4) Tj = −40 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

102

150 200

500

mlb754

100

10- 1

10- 2

10- 3

(nA)

Tj (°C)

(1)

(2)

VR = 75 V

(1) Maximum values

(2) Typical values

Fig. 4. Reverse current as a function of junction

temperature

Product data sheet 5 April 2018 5 / 11

Nexperia BAS116GW

Low leakage switching diode

mbg526

0 10 20155 VR (V)

(pF)

f = 1 MHz; Tamb = 25 °C

Fig. 5. Diode capacitance as a function of reverse

voltage; typical values

mbg704

102

IFSM

(A)

10-1

tp (ms)

1 104

103

10 102

Based on square wave currents.

Tj(init) = 25 °C

Fig. 6. Non-repetitive peak forward current as a

function of pulse duration; maximum values

11. Test information

trr

(1)

+ IF

output signal

trtp

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 ΩIF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 1 mA

Fig. 7. Reverse recovery time test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Product data sheet 5 April 2018 6 / 11

Nexperia BAS116GW

Low leakage switching diode

12. Package outline

16-10-13Dimensions in mm

3.75

3.45

2.80

2.55

1.7

1.5

1.3

1.0

Fig. 8. Package outline SOD123

13. Soldering

SOD123

sod123_fr

occupied area

solder paste

solder resist

Cu pad

Dimensions in mm

16-05-10

16-08-31

0.81

0.91 2.36

1.11

0.81

4.18

0.91

1.11

3.27

4.58

3.1

1.421.12 1.222.1 1.62

Fig. 9. Reflow soldering footprint for SOD123

Product data sheet 5 April 2018 7 / 11

Nexperia BAS116GW

Low leakage switching diode

SOD123

sod123_fw

occupied area

glue dot

solder resist

solder land

Dimensions in mm

16-09-02

16-09-06

1.2

0.331.2

2.5 2

2.65

7.5

4.5

2.55 2.43.5

Fig. 10. Wave soldering footprint for SOD123

Product data sheet 5 April 2018 8 / 11

Nexperia BAS116GW

Low leakage switching diode

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

BAS116GW v.2 20180405 Product data sheet - BAS116GW v.1

Modifications: •Unit corrected to nA in Table 7, reverse current at 150 °C

BAS116GW v.1 20161124 Product data sheet -

Product data sheet 5 April 2018 9 / 11

Nexperia BAS116GW

Low leakage switching diode

15. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Product data sheet 5 April 2018 10 / 11

Nexperia BAS116GW

Low leakage switching diode

16. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 3

10. Characteristics............................................................ 5

11. Test information..........................................................6

12. Package outline.......................................................... 7

13. Soldering..................................................................... 7

14. Revision history..........................................................9

15. Legal information..................................................... 10

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 5 April 2018

Product data sheet 5 April 2018 11 / 11