Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION * Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) * Fast access Time (CL=30pF) Random Access Time/Page Access Time : 100/30ns(max.) * Supply voltage VCC : single +3.3V/ single +3.0V VCCQ : single +1.8V * 8 words/16 bytes page access * Temperature : 0C ~ +70C * Current consumption Operating(ICC ) : 60mA (max) Standby(ISB2) : 50uA (max) * Fully static operation * All inputs and outputs TTL compatible * Package K3P7P(Q)1000B-FC : 48-CSP with 0.75mm ball pitch The K3P7P(Q)1000B-FC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level. This device includes page read mode function, page read mode allows 8 words (or 16 bytes) of data to be read fast in the same page, CE and A3 ~ A21 should not be changed. This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and operating system and/or application software storage for handheld application. The K3P7P(Q)1000B-FC is packaged in a 48-CSP with 0.75mm ball pitch and 6x8 ball array. FUNCTIONAL BLOCK DIAGRAM Pin Name A21 . . . . . . . . X MEMORY CELL MATRIX A3 - A 21 Address Inputs AND (4,194,304x16/ Q0 - Q 14 Data Outputs DECODER 8,388,608x8) Q15 /A-1 Output 15(Word mode)/ LSB Address(Byte mode) BHE Y SENSE AMP. BUFFERS DECODER DATA OUT BUFFERS . . . CE BHE CONTROL LOGIC Q0/Q8 Q7/Q15 Word/Byte selection CE Chip Enable OE Output Enable VCC Power VCCQ A0~A2 A-1 OE Page Address Inputs BUFFERS AND A3 Pin Function A0 - A2 Data Output Power (+1.8V) VSS Ground NC No Connection Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC 48FP-BGA PIN CONFIGURATION (TOP VIEW) 1 2 3 4 5 6 A A14 A10 N.C A20 A6 A2 B A13 A11 A19 N.C A7 A3 C A15 A12 A8 A21 A5 A4 D D15/ A-1 A9 VCCQ A18 A17 OE E Vss D6 VCC D2 D9 Vss F BHE D7 D5 D10 D0 CE G A16 D14 D12 D11 D8 A0 H N.C* D13 D4 D3 D1 A1 Note : See last page for package dimension. N.C* : will be MSB Address for the 128Mbit. ABSOLUTE MAXIMUM RATINGS Item Voltage on Any Pin Relative to VSS Temperature Under Bias Storage Temperature Operating Temperature Symbol Rating Unit VIN -0.3 to +4.5 V TBIAS -10 to +85 C TStg -55 to +150 C TA 0 to +70 C NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS, TA = 0 to 70C) Symbol Min Typ Max Unit Supply Voltage Item VCC 2.7/3.0 3.0/3.3 3.3/3.6 V Supply Voltage VCCQ 1.6 1.8 2.0 V Supply Voltage VSS 0 0 0 V Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC DC CHARACTERISTICS Symbol Parameter Operating Current Test Conditions Min Max Unit ICC CE=OE=VIL, all outputs open - 60 mA Standby Cur- TTL Level ISB1 CE=VIH, all outputs open - 500 uA rent CMOS Level ISB2 CE=VCC, all outputs open - 50 uA Input Leakage Current ILI VIN=0 to VCC - 10 uA Output Leakage Current ILO VOUT=0 to VCC - 10 uA Input High Voltage, All Inputs VIH 1.3 VCC+0.3 V Input Low Voltage, All Inputs VIL -0.3 0.5 V Output High Voltage Level VOH IOH = -200uA (VCCQ=1.8V) 1.4 - V Output Low Voltage Level VOL IOL = 2.1mA - 0.4 V NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input pins(VIH) is VDD+0.3V which, during transitions, may overshoot to VDD+2.0V for periods <20ns. MODE SELECTION CE OE BHE Q15/A-1 H X X L H X H L L L Mode Data Power X Standby High-Z Standby X Operating High-Z Active Output Operating Q0~Q15 : Dout Active Operating Q0~Q7 : Dout Q8~Q 14 : Hi-Z Active Input CAPACITANCE( TA =25C, f=1.0MHz) Item Output Capacitance Input Capacitance Symbol Test Conditions Min Max Unit COUT VOUT=0V - 12 pF CIN VIN=0V - 12 pF NOTE : Capacitance is periodically sampled and not 100% tested. AC CHARACTERISTICS (TA=0C to +70C, VCC=3.3V/3.0V0.3V, VCCQ=1.8V0.2V, unless otherwise noted.) TEST CONDITIONS Item Input Pulse Levels Input Rise and Fall Times Input Timing Reference Levels Output timing Reference Levels Output Loads Value GND to VCCQ 3ns VCCQ x 0.5V VCCQ x 0.5V 1 TTL Gate and CL=30pF Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC READ CYCLE (VCCQ=1.8V 0.2V, CL=30pF ) Item Read Cycle Time Chip Enable Access Time Symbol tRC K3P7P(Q)1000B-FC10 Min Max 100 Unit ns tACE 100 ns Address Access Time tAA 100 ns Page Address Access Time tPA 30 ns Output Enable Access Time tOE 30 ns Output or Chip Disable to Output High-Z tDF 20 ns Output Hold from Address Change tOH NOTE : Page Address is determined as below. Word mode (BHE=VIH) : A 0, A1, A2 Byte mode (BHE=VIL) : A-1, A0 , A1, A2 0 ns Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC TIMING DIAGRAM READ ADD A0~A21 A-1(*1) ADD1 ADD2 tRC tDF(*3) tACE CE tOE tAA OE tOH DOUT D0~D7 D8~D15(*2) VALID DATA VALID DATA PAGE READ CE tDF(*3) OE ADD A3~A21 ADD A0,A1,A2 A -1(*1) 1 st tAA tPA VALID DATA VALID DATA VALID DATA VALID DATA DOUT D0~D7 D8~D15(*2) 3 rd 2 nd NOTES : *1.Byte Mode only. A-1 is Least Significant Bit Address.(BHE = VIL) *2. Word Mode only.(BHE = VIH) *3. tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or VOL level. Preliminary Information CMOS MASK ROM K3P7P(Q)1000B-FC PACKAGE DIMENSIONS (48 FP-BGA) Top View Bottom View A1 Index Mark B B 6 5 4 0.65 3 2 0.65 1 A A1 Index Mark C/2 C/2 B C C C D C1 E F G H B1 B/2 B/2 Side View Detail A Detail A 0.27 A 0.30 (Typ.) Y E E2 D E1 C 0.77 (Typ.) Notes. 1. Bump counts : 48 (6 x 8 Array) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(max) (Unit : mm) Min Typ. Max A - 0.75 - B 8.90 9.00 9.10 B1 - 3.75 - C 8.90 9.00 9.10 C1 - 5.25 - D 0.35 0.40 0.45 E 1.00 1.10 1.20 E1 0.72 0.77 0.82 E2 0.25 0.30 0.35 Y - - 0.08