VS-ST300C Series
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Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (E-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
Package TO-200AB (E-PUK)
Diode variation Single SCR
IT(AV) 650 A
VDRM/VRRM 400 V to 2000 V
VTM 2.18 V
IGT 100 mA
TJ-40 °C to 125 °C
TO-200AB (E-PUK)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
650 A
Ths 55 °C
IT(RMS)
1290 A
Ths 25 °C
ITSM
50 Hz 8000 A
60 Hz 8380
I2t50 Hz 320 kA2s
60 Hz 292
VDRM/VRRM 400 to 2000 V
tqTypical 100 µs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST300C..C
04 400 500
50
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST300C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
650 (320) A
55 (75) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1290
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8000
t = 8.3 ms 8380
t = 10 ms 100 % VRRM
reapplied
6730
t = 8.3 ms 7040
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
320
kA2s
t = 8.3 ms 292
t = 10 ms 100 % VRRM
reapplied
226
t = 8.3 ms 207
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 3200 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage VTM Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate
of rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/µs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
µs
Typical turn-off time tqITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
VS-ST300C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.5 -
V
TJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10.0 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.02
DC operation double side cooled 0.01
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.007 0.007
TJ = TJ maximum K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
VS-ST300C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
30°
60° 90° 120° 180°
Conduction Angle
ST300C..C Series
(Single Side Cooled)
R (DC) = 0.09 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800
DC
30°
60° 90°
120° 180°
Conduction Period
ST300C..C Series
(Single Side Cooled)
R (DC) = 0.09 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30° 60° 90° 120°
180°
Conduction Angle
ST300C..C Series
(Double Side Cooled)
R (DC) = 0.04 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30°
60°
90°
120°
180°
Conduction Period
ST300C..C Series
(Double Side Cooled)
R (DC) = 0.04 K/W
thJ-hs
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500 600 700
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST300C..C Series
T = 125 °C
J
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST300C..C Series
T = 125 °C
J
VS-ST300C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristcs
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
110100
Initial T
J
= 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST300C..C Series
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01 0.1 1
Versus Pulse Train Duration. Control
Initial T
J
= 125 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
ST300C..C Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0123456789
T = 25°C
J
T = 125°C
J
ST300C..C Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJ-hs (K/W)
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Steady State Value
R = 0.09 K/W
(Single Side Cooled)
R = 0.04 K/W
(Double Side Cooled)
(DC Operation)
ST300C..C Series
thJ-hs
thJ-hs
VS-ST300C Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
- Thyristor
1- Vishay Semiconductors product
2
- Essential part number
3
- 0 = Converter grade
4
9
- C = Ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- C = PUK case TO-200AB (E-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8
- Critical dV/dt: None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 30 0 C 20 C 1 -
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95075
Outline Dimensions
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Revision: 12-Jul-17 1Document Number: 95075
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E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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