IRFP4332PbF
2www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 29 33 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -14 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 200 µA
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 100 ––– ––– S
QgTotal Gate Charge ––– 99 150 nC
Qgd Gate-to-Drain Charge ––– 35 –––
tst Shoot Through Blocking Time 100 ––– ––– ns
EPULSE Energy per Pulse µJ
Ciss Input Capacitance ––– 5860 –––
Coss Output Capacitance ––– 530 ––– pF
Crss Reverse Transfer Capacitance ––– 130 –––
Coss eff. Effective Output Capacitance ––– 360 –––
LDInternal Drain Inductance ––– 5.0 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 13 ––– from package
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energy
d
mJ
EAR Repetitive Avalanche Energy
c
mJ
VDS(Avalanche) Repetitive Avalanche Voltage
c
V
IAS Avalanche Current
d
A
Diode Characteristics
Parameter Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current ––– ––– 57
(Body Diode) A
ISM Pulsed Source Current ––– ––– 230
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 190 290 ns
Qrr Reverse Recovery Charge ––– 820 1230 nC
MOSFET symbol
VDS = 25V, ID = 35A
VDD = 125V, ID = 35A, VGS = 10V
e
Conditions
and center of die contact
VDD = 200V, VGS = 15V, RG= 4.7Ω
VDS = 200V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1Ω, TJ = 100°C
VDS = 25V
VDS = VGS, ID = 250µA
VDS = 250V, VGS = 0V
VGS = 0V, VDS = 0V to 200V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 0V
L = 220nH, C= 0.3µF, VGS = 15V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35A
e
TJ = 25°C, IF = 35A, VDD = 50V
di/dt = 100A/µs
e
TJ = 25°C, IS = 35A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Typ. Max.
ƒ = 1.0MHz,
––– 210
36
35
–––
–––
300 –––
––– 520 –––
––– 920 –––