933890540115 - NXP - Datasheet.Live

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 May 07 1999 Apr 14

DISCRETE SEMICONDUCTORS

PXT4401

NPN switching transistor

‘

ook, halfpage

M3D109

1999 Apr 14 2

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 40 V).

APPLICATIONS

•Switching and linear amplification in industrial and

consumer applications.

DESCRIPTION

NPN switching transistor in a SOT89 plastic package.

PNP complement: PXT4403.

MARKING

TYPE NUMBER MARKING CODE

PXT4401 p2X

PINNING

PIN DESCRIPTION

1 emitter

2 collector

3 base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM296

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −60 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-base voltage open collector −6V

Ccollector current (DC) −600 mA

ICM peak collector current −800 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −1.25 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 14 3

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 100 K/W

Rth j-s thermal resistance from junction to soldering point 20 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =60V −50 nA

IEBO emitter cut-off current IC= 0; VEB =6V −50 nA

hFE DC current gain VCE = 1 V; (see Fig.2) 20 −

IC= 0.1 mA 20 −

IC= 1 mA 40 −

IC=10mA 80 −

C= 150 mA; note 1 100 300

IC= 500 mA; VCE = 2 V; note 1 40 −

VCEsat collector-emitter saturation

voltage IC= 150 mA; IB= 15 mA; note 1 −400 mV

IC= 500 mA; IB= 50 mA; note 1 −750 mV

VBEsat base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 −950 mV

IC= 500 mA; IB= 50 mA; note 1 −1.2 V

Cccollector capacitance IE=ie= 0; VCB =5V; f=1MHz −8pF

eemitter capacitance IC=ic= 0; VEB = 500 mV; f = 1 MHz −30 pF

fTtransition frequency IC= 20 mA; VCE = 10 V; f =100 MHz 250 −MHz

Switching times (between 10% and 90% levels); (see Fig.3)

ton turn-on time ICon = 150 mA; IBon = 15 mA;

IBoff =−15 mA −35 ns

tddelay time −15 ns

trrise time −20 ns

toff turn-off time −250 ns

tsstorage time −200 ns

tffall time −60 ns

1999 Apr 14 4

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

Fig.2 DC current gain; typical values.

handbook, full pagewidth

300

100

200

MGD811

10−111010

2103

hFE

IC mA

VCE = 1 V

Fig.3 Test circuit for switching times.

andbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Vi= 9.5 V; T = 500 µs; tp=10 µs; tr=t

f≤3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB= 325 Ω; RC= 160 Ω.

VBB =−3.5 V; VCC = 29.5 V.

Oscilloscope: input impedance Zi=50Ω.

1999 Apr 14 5

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

SOT89 97-02-28

EHE

0 2 4 mm

scale

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.37

4.6

4.4

2.6

2.4

4.25

3.75

3.0

0.13

1.5

min.

0.8

0.53

0.40

1.8

1.4

1999 Apr 14 6

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 14 7

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT4401

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 14 Document order number: 9397 750 05626