NPN Silicon AF Transistor BCP 68 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 69 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 Q62702-C2126 Q62702-C2127 Q62702-C2128 Q62702-C2129 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 VCES 20 25 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 C2) Ptot 1.5 W Junction temperature Tj 150 C Storage temperature range Tstg - 65 ... + 150 Junction - ambient2) Rth JA 72 Junction - soldering point Rth JS 17 A mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BCP 68 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 V(BR)CE0 20 - - Collector-emitter breakdown voltage IC = 10 A, VBE = 0 V(BR)CES 25 - - Collector-base breakdown voltage IC = 10 A, IB = 0 V(BR)CB0 25 - - Emitter-base breakdown voltage IE = 10 A, IB = 0 V(BR)EB0 5 - - Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 C ICB0 - - - - 100 100 nA A Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 - - 100 nA DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V hFE BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA VCEsat Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE V - 50 85 85 100 160 60 - - 100 160 250 - - 375 160 250 375 - - - 0.5 - - 0.6 - - 1 - 100 - V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1) fT Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 MHz BCP 68 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Collector cutoff current ICB0 = f (TA) VCB = 25 V DC current gain hFE = f (IC) VCB = 1 V Semiconductor Group 3 BCP 68 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 4