MMS9014
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: J6
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 50 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 45 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=50Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=35Vdc, IB=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc) 200 1000 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=5.0mAdc) --- 0.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc, IB=5.0mAdc) --- 1.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=10mAdc, VCE=5.0Vdc, f=30MHz) 150 --- MHz
CLASSIFICATION OF HFE (1)
Rank L H
Range 200-450 450-1000
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
F
www.mccsemi.com
Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
