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PTB 20258
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
0
2
4
6
8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Input Power (Watts)
Output Power (Watts)
20
32
44
56
68
80
Efficiency (%)
VCC = 25 V
ICQ = 27 mA
f = 960 MH z
Out put P owe
r
Efficiency
Typical O utput Power and Efficiency vs. Input Po w er
Package 20208
20258
LOT CODE
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 915–960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 55 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC1.7 Adc
Total Device Dissipation at Tflange = 25°C PD22 Watts
Above 25°C derate by 0.125 W/°C
Storage Temperature Range Tstg -40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 8 °C/W
7-21-98
PTB 20258
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 28 29 — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 60 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) Gpe 10 11 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) ηC—50—%
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, Ψ— — 30:1 —
f = 960 MHz—all phase angles at frequency of test)
Typical Performance
9
10
11
12
13
700 750 800 850 900 950 1000 1050
Frequency (MHz)
Gain (dB)
VCC = 25 V
ICQ = 27 mA
POUT = 6 W
Gain vs. Frequency
(as measured in a broadba nd c ircuit)
3
4
5
6
7
8
9
20 22 24 26 28
Supply V oltage (Volts)
Output Power (Watts)
ICQ = 27 mA
f = 960 MHz
Output Power (at P-1 d B) vs. Supply Voltage
7-21-98
PTB 20258
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Power Gain vs. Out put Power
6
8
10
12
14
16
0.10 1.00 10.00
Output Power (W)
Power Gain (d B)
VCC = 25V
f = 960 MHz
ICQ = 41 mA ICQ = 27 mA
ICQ = 14 mA
ICQ = 7 mA
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
1000.00 3.02 -1.05 88.10 12.00
980.00 3.10 -1.22 9.04 13.00
960.00 3.19 -1.35 9.06 14.10
950.00 3.29 -1.55 9.20 14.36
915.00 3.79 -1.95 9.50 15.98
900.00 3.60 -2.06 10.10 16.83
850.00 3.87 -2.04 11.67 17.20
800.00 3.90 -2.66 12.60 17.80
750.00 4.15 -3.00 13.80 18.87
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
L1
© 1998 Ericsson Inc.
EUS/KR 1301-PTB 20258 Rev. A 07-21-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Impedance Data
(VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA) Z0 = 50 Ω
