Monolithic InGaP HBT MMIC Amplier
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
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IF/RF MICROWAVE COMPONENTS
Electrical Specications at 25°C and 70mA, unless noted
ERA-6+
Absolute Maximum Ratings
Parameter Ratings
Operating Temperature* -45°C to 85°C
Storage Temperature -65°C to 150°C
Operating Current 85mA
Power Dissipation 451mW
Input Power 20dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1Case is dened as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter Min. Typ. Max. Units Cpk
Frequency Range* DC 4GHz
Gain f=0.1 GHz 12 12.6 13.3 dB ≥ 1.5
f=1 GHz 12.5
f=2 GHz 11.1 11.7 12.3
f=3 GHz 11.7
f=4 GHz 9.8 10.3 10.8
Magnitude of Gain Variation versus Temperature
(values are negative)
f=0.1 GHz 0.0013 .0025 dB/°C
f=1 GHz 0.0018 .0035
f=2 GHz 0.0021 .004
f=3 GHz 0.0025 .005
f=4 GHz 0.0032 .007
Input Return Loss f=0.1 GHz 25 dB
f=1 GHz 30
f=2 GHz 35
f=3 GHz 33
f=4 GHz 28
Output Return Loss f=0.1 GHz 35 dB
f=1 GHz 24
f=2 GHz 20
f=3 GHz 20
f=4 GHz 20
Reverse Isolation f=2 GHz 16 19 dB
Output Power @ 1 dB compression f=0.1 GHz 17.1 dBm ≥ 1.33
f=1 GHz 16 17.2
f=2 GHz 17.1
f=3 GHz 16.2
f=4 GHz 14.7
Saturated Output Power
(at 3dB compression)
f=0.1 GHz 17.1 dBm
f=1 GHz 17.2
f=2 GHz 17.7
f=3 GHz 17.3
f=4 GHz 15.9
Output IP3 f=0.1 GHz 34 36.5 dBm ≥ 1.33
f=1 GHz 33 35
f=2 GHz 31 33
f=3 GHz 30
f=4 GHz 28.5
Noise Figure f=0.1 GHz 4.4 5.2 dB
f=1 GHz 4.4 5.5
f=2 GHz 4.5 5.5
f=3 GHz 4.5 6
f=4 GHz 4.7 6
Group Delay f=2 GHz 80 psec
Recommended Device Operating Current 70 mA
Device Operating Voltage 4.7 5 5.3 V ≥ 1.5
Device Voltage Variation vs. Temperature at 70mA -3.2 mV/°C
Device Voltage Variation vs. Current at 25°C 11.8 mV/mA
Thermal Resistance, junction-to-case1138 °C/W
*Guaranteed specication DC-4 GHz. Low frequency cut off determined by external coupling capacitors.