DATA SH EET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 05
DISCRETE SEMICONDUCTORS
BSW66A; BSW67A; BSW68A
NPN switching transistors
M3D111
1997 May 05 2
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
FEATURES
•High current (max. 1 A)
•High voltage (max. 150 V).
APPLICATIONS
•General purpose switching and amplification
•Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
12
3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BSW66A −−100 V
BSW67A −−120 V
BSW68A −−150 V
VCEO collector-emitter voltage open base
BSW66A −−100 V
BSW67A −−120 V
BSW68A −−150 V
ICcollector current (DC) −−1A
P
tot total power dissipation Tcase ≤25 °C−−5W
h
FE DC current gain IC= 10 mA; VCE =5V 30 −−
I
C
= 500 mA; VCE =5V 30 −−
f
Ttransition frequency IC= 100 mA; VCE = 20 V; f = 100 MHz −130 −MHz
toff turn-off time ICon = 500 mA; IBon = 50 mA; IBoff =−50 mA −900 −ns
1997 May 05 3
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSW66A −100 V
BSW67A −120 V
BSW68A −150 V
VCEO collector-emitter voltage open base
BSW66A −100 V
BSW67A −120 V
BSW68A −150 V
VEBO emitter-base voltage open collector −6V
I
Ccollector current (DC) −1A
I
CM peak collector current tp≤20 ms −2A
I
BM peak base current −200 mA
Ptot total power dissipation Tamb ≤25 °C−800 mW
Tcase ≤25 °C−5W
T
stg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient free air 220 K/W
Rth j-c thermal resistance from junction to case 35 K/W
1997 May 05 4
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BSW66A IE= 0; VCB =50V −−100 nA
IE= 0; VCB = 50 V; Tj= 150 °C−−50 µA
IE= 0; VCB = 100 V −−100 µA
ICBO collector cut-off current
BSW67A IE= 0; VCB =60V −−100 nA
IE= 0; VCB = 60 V; Tj= 150 °C−−50 µA
IE= 0; VCB = 120 V −−100 µA
ICBO collector cut-off current
BSW68A IE= 0; VCB =75V −−100 nA
IE= 0; VCB = 75 V; Tj= 150 °C−−50 µA
IE= 0; VCB = 150 V −−100 µA
IEBO emitter cut-off current IC= 0; VEB =3V −−100 nA
IC= 0; VEB =6V −−100 µA
hFE DC current gain VCE =5V
I
C=10mA 30 −−
I
C
= 100 mA 40 −−
I
C
= 500 mA 30 −−
I
C
=1A 10 −−
V
CEsat collector-emitter saturation voltage IC= 100 mA; IB=10mA −−150 mV
IC= 500 mA; IB=50mA −−400 mV
IC= 1 A; IB= 150 mA −−1V
V
BEsat base-emitter saturation voltage IC= 100 mA; IB=10mA −−900 mV
IC= 500 mA; IB=50mA −−1.1 V
IC= 1 A; IB= 150 mA −−1.4 V
Cccollector capacitance IE=i
e= 0; VCB =10V; f=1MHz −−20 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0; f = 1 MHz −−300 pF
fTtransition frequency IC= 100 mA; VCE = 20 V; f = 100 MHz −130 −MHz
Switching times (between 10% and 90% levels)
ton turn-on time ICon = 500 mA; IBon = 50 mA;
IBoff =−50 mA −500 −ns
toff turn-off time −900 −ns
1997 May 05 5
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
PACKAGE OUTLINE
UNIT a b D D1jkLw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 6.60
6.35 0.48
0.41 9.39
9.08 8.33
8.18 0.85
0.75 0.95
0.75 14.2
12.7
α
0.2 45°
DIMENSIONS (mm are the original dimensions)
SOT5/11 TO-39 97-04-11
k
j
DA L
seating plane
b
D1
0 5 10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads SOT5/11
A
wA
M M BM
α
B
a
1
2
3
1997 May 05 6
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 May 05 7
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
NOTES
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 05 Document order number: 9397 750 01977
