MOTOROU Order this dooument by 2C3251AHV/D SEMICONDUCTOR TECHNICAL DATA o 2C3251AHV Chip . PNP Silicon Small-Signal Transistor III ,~4 ,)~ti m - I Rating E o ELECTRICAL CHARACTE~@~,@UA = 25C unlessOthetise noted.) Chamdu*$:# symbol I Mln Max I Unit OFF CHARACTERISll&$j?;! Colltior-Emtier @W,~ (1C= 10 mA*J,,,>t `~ ,.. ,.,. Colleotor*a~~aFdown Vobge" Vobge -- Vk 60 -- V* 5.0 -- Vdo -- -- 20 20 ;: V(BR)CEO 60 V(BR)CBO V(BR)EBO (1C=I,fw Bas,~M$r'Voltsge ,~~~,j~~dc) iiCutoffCument 1~~cE = 40 Vdo, VBE(o~ = 3.0 Vdo) NCE = 40 VdO,VBE(O~ = 3.0 V&, TA = 1500C) o lc~ Colleotor Cutoff Current ~CB = 40 Vdc) icBO -- 20 M& Emitter Cutoff Current NEB(O~ = 3.0 V*, VCE -40 vdo) IEBX -- 50 nAdo ` Pulsed. Pulse Wdth 250 to 350 W, D@ @tie 1.0 to 2.OVO. RW O 9/93 (mtinued) B Physical Characteristics: Dle Size -- 16x 20 roils Die Thickness -- R roils Bond Pad Siza Emitier -- 3.3 x 4.0 roils Base -- 3.3x 4.0 roils Back Metal 20 ~ Gold (Nom) Top Metal 15 ~ Alum. (Nom) Back Side = Collwtor rail Il~.$.,<. I tf I -- I 50 Puls~~,#* Wdth 250 to 350 W, DutyQcle 1.0to 2.o%. * Calcti~tedvalue COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA 3-160 ns ASSUMNCE TESTING prdPost Bum+n) CharacteristioeTested Mln Mm Collestor Cutoff Current ~cE = 40 Vdo) [CBO -- 20 DC Cument Gain* (Ic = 10 W+, VCE = 1.0 Vdo), hFE 100 300 Delta from PrHum4n Measured Valuee Deb CollWor Cutoff Current Delta DC Current Gain* lrtittaland EndPointLlmlte S~bol Pulsed. Pulse VVidth250 to 350 W, Duty Oycle 1.0 to 2.0%. Mln AICBO -- AhFF -- Unit nAdo:i,::t,,,, `*')+?,'".' ,ll*.+.<, ..,,, + \:<,:l ,,+;, .,,*. ,\, ,\,:Y!,. ~,t?>{:t: