MOTOROU
SEMICONDUCTOR TECHNICAL DATA Order this dooument
by 2C3251AHV/D
o
2C3251AHV Chip
.
PNP Silicon III
Small-Signal Transistor ,~4
,)~ti
-
m
EB
IRating
o
Physical
Characteristics:
Dle Size —
16x 20 roils
Die Thickness —
Rroils
Bond Pad Siza
Emitier —3.3 x4.0 roils
Base —3.3x 4.0 roils
Back Metal
20 ~Gold (Nom)
Top Metal
15 ~Alum. (Nom)
Back Side =Collwtor
ELECTRICAL CHARACTE~@~,@UA =25°CunlessOthetise noted.)
Chamdu*$:# symbol IMln Max IUnit
OFF CHARACTERISll&$j?;!
Colltior-Emtier @W,~ Vobge” V(BR)CEO 60 Vk
(1C=10 mA*J,,,>t ‘~
—
,..,.,.
Colleotor*a~~aFdown Vobge V(BR)CBO 60 —V*
(1C=I,fw
Bas,~M$r’Voltsge V(BR)EBO 5.0 —Vdo
,~~~,j~~dc)
ii- CutoffCument lc~
1~~cE =40 Vdo, VBE(o~ =3.0 Vdo) —20
NCE =40 VdO,VBE(O~ =3.0 V&, TA=1500C) —20 ;:
Colleotor Cutoff Current icBO —20 M&
~CB =40 Vdc)
EmitterCutoff Current IEBX —50 nAdo
NEB(O~ =3.0 V*, VCE -40 vdo)
o‘Pulsed. PulseWdth 250 to 350 W, D@ @tie 1.0 to2.OVO. (mtinued)
RW O
9/93
rail Il~.$.,<. Itf I—I50 ns
●Puls~~,#* Wdth 250to 350W, DutyQcle 1.0to2.o%.
●*Calcti~tedvalue
COMMERCIAL PLUS AND MIUAERO SMALLSIGNAL TRANSISTOR DATA
3-160
ASSUMNCE TESTING prdPost Bum+n)
CharacteristioeTested lrtittalandEndPointLlmlte
S~bol Mln Mm Unit
Collestor Cutoff Current [CBO —20 nAdo:i,::t,,,,
~cE =40 Vdo) ‘*’)+?,’”.’+
,ll*.+.<,
DC CumentGain* ..,,,
hFE 100 300
(Ic =10 W+, VCE =1.0 Vdo), \:<,:l
,,+;,
.,,*.,\, ,\,:Y!,.
Delta fromPrHum4n Measured Valuee Mln M= ~,t?<y,,.,
.:,..+~**
,.+”“’$’
Deb CollWor Cutoff Current AICBO —*100 .(: “’~:i$wi
:%of Initial V4ue
or*yp, “nAdc
wtiche&~,&#&ter
Delta DC Current Gain* AhFF —.QthJ,&B ~nof Initial Vallle
●Pulsed. Pulse VVidth250 to 350 W, Duty Oycle 1.0 to 2.0%. >>{:t:<T.*:.J~}i,,‘.
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,,.,
.,~..
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Lmrature Dietrfbutlon Cente~
USA Motorola Uterature Distributlo~ P.O.Box 2091~ Phoenix,Atizona -6.
EUROPE Motorola Ltd.; European LkerarureOentr%66Tanners Ddve, BIXelsnds, Milton Keynes, MK14 5BP, Englti.
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