2SK1404 Silicon N Channel MOS FET REJ03G0944-0200 (Previous: ADE-208-1284) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS Ratings 600 Unit V Gate to source voltage Drain current VGSS ID 30 5 V A 20 5 A A Drain peak current Body to drain diode reverse drain current ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 35 150 W Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Tstg -55 to +150 C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 600 Typ -- Max -- Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS 30 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) -- 2.0 -- -- 250 3.0 A V VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) -- 1.1 1.5 ID = 2.5 A, VGS = 10 V * |yfs| 3.0 5.0 -- S ID = 2.5 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss -- -- 1000 250 -- -- pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) -- -- 45 12 -- -- pF ns tr 45 105 -- -- ns ns Rise time Turn-off delay time td(off) -- -- Fall time Body to drain diode forward voltage tf VDF -- -- 55 0.9 -- -- ns V trr -- 500 -- ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 2.5 A, VGS = 10 V, RL = 12 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/s 2SK1404 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 ar ea n) (o DS O is per lim at ite ion d in b y th R is = m s tio ra (1 ot (T C Sh n ) = 0.3 s m s 10 pe 1 1 O 25 Drain Current ID (A) 0 PW 3 s 10 C 20 10 40 10 D Ta = 25C 0.1 ) C Channel Dissipation Pch (W) 60 0.05 0 50 100 1 150 300 1,000 Typical Transfer Characteristics 10 6V VDS = 20 V Pulse Test Pulse Test 8 Drain Current ID (A) 5V 4.5 V 6 4 4V 2 10 20 8 6 4 TC = 75C 25C -25C 2 3.5 V 30 40 50 0 2 6 4 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 5 A 6 4 2A 2 1A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) 100 Typical Output Characteristics VGS = 3 V Drain to Source Saturation Voltage VDS (on) (V) 30 Drain to Source Voltage VDS (V) 10 V 0 10 Case Temperature TC (C) 10 0 3 50 Pulse Test 20 10 5 VGS = 10 V 2 1 15 V 0.5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK1404 Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 5 4 VGS = 10 V Pulse Test 3 ID = 5 A 2A 2 1A 1 0 -40 0 80 40 120 160 75C 2 1 0.5 0.2 0.1 0.05 1 5 2 VGS = 0 f = 1 MHz Capacitance C (pF) 50 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 0.1 0.5 0.2 2 1 Ciss 1,000 Coss 100 Crss 10 0 5 20 10 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 1,000 800 16 VDD = 100 V 250 V 400 V 12 600 VGS VDS 200 8 ID = 5 A 4 VDD = 400 V 250 V 100 V 0 0 0.5 10,000 100 400 0.2 Typical Capacitance vs. Drain to Source Voltage 200 10 0.05 0.1 Body to Drain Diode Reverse Recovery Time 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 40 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 5 500 20 -25C TC = 25C VDS = 20 V Pulse Test Drain Current ID (A) 1,000 Drain to Source Voltage VDS (V) 10 Case Temperature TC (C) VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 % Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 200 td (off) 100 tf 50 tr 20 td (on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1404 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 VGS = 5 V, 10 V 2 0, -5 V 0.4 0 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C 0.1 0.1 0.03 0.05 PDM 0.02 0.01 ulse P hot 1S 0.01 10 T 100 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T. RL Vin 10 V 50 Rev.2.00 Sep 07, 2005 page 5 of 6 V.DD =. 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1404 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 0.3 2.8 0.2 3.2 0.2 2.5 0.2 4.45 0.3 14.0 1.0 5.0 0.3 1.2 0.2 1.4 0.2 2.0 0.3 12.0 0.3 17.0 0.3 0.6 7.0 0.3 2.5 0.7 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Ordering Information Part Name 2SK1404-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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