STM32F446RCT6TR - STMICROELECTRONICS



Supplier : Samsung el ect r o-mechanics  Samsung P/N : CL10B334KA8VPNC



Product : M ul ti-la yer Ceramic Capacit or Description : CAP, 330㎋, 25V, ± 10%, X7R, 0603

 AEC-Q 200 Specif i ed

CL 10 B334 K A 8 V P N C

① ②③ ④ ⑤⑥⑦⑧⑨⑩⑪

①Series Samsung Multi-layer Ceramic Capacitor

②Size 0603 (inch code) L: 1.6 ± 0.1 mm W: ± 0.1 mm

③Dielectric X7R ⑧Inner elect r ode Ni

④Capacitance 330 ㎋Termination

⑤Capacitance ±10 % Plating Sn 100% (Pb Free)

tolerance ⑨Product Automotive

⑥Rated Voltag

25 V ⑩Grade code Standard

⑦Thickness 0.8 ± 0.1 mm ⑪Packaging Cardboard Type, 7" reel

B. Reliability Test and Judgement condition

Performance Test condition

Soft termination

0.8

Specification of Automotive MLCC

(Reference sheet)

A. Samsung Part Num ber

High Temperature Unpowered, 1000hrs@T=150℃

Exposure Capacitance Change : Within ±10% Measurement at 24±2hrs after test conclusion

Tan δ : 0.075 max

IR : More than 10,000㏁ or 500㏁×㎌

Whichever is Smaller

Temperature Cyclin

1000Cycles

Capacitance Change : Within ±10% Measurement at 24±2hrs after test conclusion

Tan δ : 0.075 max 1 cycle condition :

IR : More than 10,000㏁ or 500㏁×㎌ -55+0/-3℃(15±3min) -> Room Temp(1min.)

Whichever is Smaller -> 125+3/-0℃(15±3min) -> Room Temp(1min.)

Destructive Physical No Defects or abnormalities Per EIA 469

Analysis

Moi sture Resistance 10Cycles, t=24hrs/cycle

Capacitance Change : Within ±12.5% Heat (25~65℃) and humidity (80~98%), Unpowered

Tan δ : 0.075max measurement at 24±2hrs after test conclusion

IR : More than 10,000㏁ or 500㏁×㎌

Whichever is Smaller

Humid ity Bias 1000hrs 85℃/85%RH, Rated Voltate and 1.3~1.5V,

Capacitance Change : Within ±12.5% Add 100kohm resistor

Tan δ : 0.075 max Measurement at 24±2hrs after test conclusion

IR : More than 500㏁ or 25㏁×㎌The charge/discharge current is less than 50mA.

Whichever is Smaller

High Temperature 1000hrs @ TA=125℃, 200% Rated Voltage,

Operating Life Capacitance Change : Within ±12.5% Measurement at 24±2hrs after test conclusion

Tan δ : 0.075 max The charge/discharge current is less than 50mA.

IR : More than 1000㏁ or 50㏁×㎌

Whichever is Smaller

Appearance : No abnormal exterior appearance

External Visual No abnormal exterior appearance Microscope (´10)

Physical Dimension

Within the specified dimensions Using The calipers

Mechanical S hock Three shocks in each direction should be applied along

Capacitance Change : Within ±10% 3 mutually perpendicular axes of the test specimen (18 shocks)

Tan δ, IR : initial spec.

Vibration 5g's for 20min., 12cycles each of 3 orientations,

Capacitance Change : Within ±10% Use 8"×5" PCB 0.031" Thick 7 secure points on one long side

Tan δ, IR : initial spec. and 2 secure points at corners of opposite sides. Parts mounted

within 2" from any secure point. Test from 10~2000㎐.

Resistance to Solder pot : 260±5℃, 10±1sec.

Solder Heat Capacitance Change : Within ±10%

Tan δ, IR : initial spec.

Thermal Shock -55℃/+125℃.

Capacitance Change : Within ±10% Note: Number of cycles required-300,

Tan δ, IR : initial spec. Maximum transfer time-20 sec, Dwell time-15min. Air-Air

ESD AEC-Q200-002

Capacitance Change : Within ±10%

Tan δ, IR : initial spec.

Solderability 95% of the terminations is to be soldered a) Preheat at 155℃ for 4 hours, Immerse in solder for 5s at 245±5

℃

evenly and continuously b) Steam aging for 8 hours, Immerse in solder for 5s at 245±5℃

℃

Velocity

Performance Test condition

Appearance : No abnormal exterior appearance

Duration Wave

Appearance : No abnormal exterior appearance

1,500G

Peakvalue

Appearance : No abnormal exterior appearance

0.5ms Half sine 4.7m/sec.

c) Steam aging for 8 hours, Immerse in solder for 120s at 260±5

℃

solder : a solution ethanol and rosin

Electrical Capacitance : Within specified tolerance The Capacitance /D.F. should be measured at 25℃,

Characterization Tan δ (DF) : 0.05max. 1㎑±10%, 1.0±0.2Vrms

IR(25℃) : More than 10,000㏁ or 500㏁×㎌I.R. should be measured with a DC voltage not exceeding

IR(125℃) : More than1,000㏁ or 10㏁×㎌Rated Voltage @25℃, @125℃ for 60~120 sec.

Whichever is Smaller

Dielectric Strength Dielectric Strength : 250% of the rated voltage for 1~5 seconds

Board Flex Bending to the limit (2㎜) for 5 seconds

Capacitance Change : Within ±10%

Terminal 10N, for 60±1 sec.

Strength(SMD) Capacitance Change : Within ±10%

Beam Load Destruction value should not be exceed Beam speed

Chip Length < 2.5㎜0.5±0.05㎜/sec

a) Chip Thickness > 0.5㎜ : 20N

b) Chip Thickness ≤ 0.5㎜ : 8N

Temperature X7R

characteristic (From -55℃ to 125℃, Capacitance change should be within ±15%)

C. Recommended Sol der ing method :

Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max )

Product specifications included in the specifications are effective as of March 1, 2013.

Please be advised that they are standard product specifications for reference only.

We may change, modify or discontinue the product specifications without notice at any time.

So, you need to approve the product specifications before placing an order.

Should you have any question regarding the product specifications

Appearance : No abnormal exterior appearance

Should

you

have

any

question

regarding

the

product

specifications

please contact our sales personnel or application engineers.