Pt Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR MPSA14 MMBTA14 PZTA14 SOT-23 B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absol ute Maxi mum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voces Collector-Emitter Voltage 30 Vv Voso Collector-Base Voltage 30 Vv Veo Emitter-Base Voltage 10 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSA14 *MMBTA14 PZTA14 Pp Total Device Dissipation 625 350 1,000 mW Derate above 25C 5.0 2.8 8.0 mW/C Reuc Thermal Resistance, Junction to Case 83.3 C/W Rega Thermal Resistance, Junction to Ambient 200 357 125 C/W "Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 em. 1997 Fairchild Semiconductor Corporation A14, Rev B VIVLZd / VLVLEWW / VLVSdINElectrical Characteristics NPN Darlington Transistor TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vieryces Collector-Emitter Breakdown Voltage lo = 100 pA, Ip = 0 30 Vv loBo Collector-Cutoff Current Veg = 30 V, IE =0 100 nA leBo Emitter-Cutoff Current Vep=10V, Ilo =0 100 nA ON CHARACTERISTICS* hee DC Current Gain lo =10mMA, Voge = 5.0 V 10,000 Ig = 100 mA, Voge = 5.0 V 20,000 Veeisaty Collector-Emitter Saturation Voltage lop = 100 mA, Ip = 0.1 mA 1.5 Vv Vee(on) Base-Emitter On Voltage lg = 100 mA, Vee = 5.0 V 2.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Ilo =10MA, VcE=5 V, 125 MHz f = 100 MHz * Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0 0.001 0.01 0.1 I, - COLLECTOR CURRENT (A) he, - TYPICAL PULSED CURRENT GAIN (K) Base-Emitter Saturation Voltage vs Collector Current B = 1000 -40 Veesar> BASE EMITTER VOLTAGE (V) _ B & io oOo 1 10 100 I- COLLECTOR CURRENT (mA) 1000 Collector-Emitter Saturation Voltage vs Collector Current o B = 1000 io i Qo 10 100 |,- COLLECTOR CURRENT (mA) Voegar7 COLLECTOR EMITTER VOLTAGE (V) Base Emitter ON Voltage vs Collector Current nr an a an iy & Vop= SV oO 4 10 100 I, - COLLECTOR CURRENT (mA) Veeon ~ BASE EMITTER ON VOLTAGE (V) 1000 1000 VIVLZd / VLVLEWW / VLVSdINNPN Darlington Transistor (continued) Typical Characteristics (continued) Collector-Cutoff Current vs Ambient Temperature ae So oOo Veg = 30V as oOo ag) COLLECTOR CURRENT (nA) 0.01 25 50 75 100 125 T,- AMBIENT TEMPERATURE (C) Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz > Ny 3 CAPACITANCE (pF) a 0.1 1 10 100 Vee" COLLECTOR VOLTAGE(V) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base [ony a Q wD @ a 2 a o a Q a So a 10 100 1000 RESISTANCE (ka) BVcer - BREAKDOWN VOLTAGE (V) eS Gain Bandwidth Product vs Collector Current a b o a 3 Ny 3 10 20 50 100 150 |,- COLLECTOR CURRENT (mA) f+- GAIN BANDWIDTH PRODUCT (MHz) Power Dissipation vs Ambient Temperature ~ oa o P,, - POWER DISSIPATION (W) x a 0 25 50 SOT-223 100 125 150 TEMPERATURE (C) VIVLZd / VLVLEWW / VLVSdIN