-- Numerical Index 2N2618 -2N2717 a] > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =/= = = = = || REPLACE. | PAGE Po [SB] Ta | Ves | Voce | fre @ Io Veesan @ Ie 2/ ft | RE ETS | ment | numaer | USE & B| Salm EL owl B =|o @25C |B] C | (wolts) | (volts) | | (min) (max) 5} (volts) = 3 3/2 2N2618 SIN VID 0,6W |] A | 200 60 40] 0 25 10M 30/1 E 200M | T 2N2619 Thyristor, see Table on Page 1-154 2N2620 | Field Effect Transistor, see Table on Page 1-166) 2N2621 G] P RFC 150M | J | 100 15 15/8 i5 1,0M 2N2622 G| P RFC 150M | J | 100 24 2415S 15 1.0M 2N2623 G| P RFC 150M | J | 100 32 32 |S 20 1.0M 2N2624 G{ P RFC 150M | J j 100 15 15] Ss 20 1.0M 2N2625 G| P RFC 150M } J | 100 24 241/58 15 L.OM 2N2626 G) P REC 150M | J} 100 32 3218 20 1.0M 2N2627 G] P RFC 150M | J | Loo 15 15] Ss 15 1.0M 2N2628 G}] P RFC 150M | J | 100 24 24]S8 15 1.0M 2N2629 GLP REG 150M | J {100 32 3215S 10 1,0M 2N2630 G | P HSS 300M | A | 100 18 10] 90 25 100M | 0.45 LOOM 3.0}E 2N2631 S| N AFA | 8.75W | C | 200 80 80 | V | 8.0 200M 2N2632 S| N ] 2N3487 7-115} LPA 40W | Cc] 175 90 60,0 40 | 120 1.0A [0.25 1.0A 40 | E 20M | T 2N2633 S| Nf} 2N3488 7-115] LPA 40w | Cc } 175 120 80} 0 40 | 120 1.0A |0.25 1.0A 40 {E 20M | T 2N2634 S| N | 2N3489 7-115 | LPA 40W [C1] 175 150 100 | 0 40 { 120 1.0A | 0.25 L.OA 40 /E 20M/T 2N2635 GI] P 8-153] HSS 150M | A | 100 30 12 |0 45 | 300 50M 0.2 10M 150M | T 2N2636 GIP PMS LooW | c {| 110 100 60 [0 20 80 254 10.65 254 Q.6M |T 2N2637 G] P PMS LooWw { c | 110 100 6040 20 80 25A 10.65 25A 0.6M {T 2N2638 G| P PMS 1oOW | c | 110 L100 60 | 0 20 80 254 10.65 254 0.6M | T 2N2639 S| N 11-11] DFA 300M | A |} 200 45 45 |0 50 | 300 10* 1.0 10M 65 4E 35M | T 2N2640 Sj)N 11-11) DFA 300M ) A } 200 45 45] 0 50 1 300 10* 1.6 10M 65 |/E 35M |T 2N2641 S|N Ll-1i1j] DFA 300M | A { 200 45 45,0 50 | 300 10* 1.90 10M 65 |E 35M | T 2N2642 S| N 11-11] DFA 300M | A | 200 45 45 | 0 | 100 | 300 Lo* 1.0 10M 130 | E 35M |T 2N2643 $7] N 11-11) DFA 300M |] A | 200 45 45 | 0] 100 } 300 10* 1.0 LOM 130 | E 35M | T 2N2644 S| N 11-11] DFA 300M {| A j 200 45 45 | 0 } 100 | 300 10* 1.0 10M 130 | E 35M | T 2N2645 S|N DFA 500M | A |} 200 75 50} R | 100 | 300 150M 0.4 LOM 75 |E 50M | T shoes Unijunction Transistors, see Table on Page 1-174 2N2648 G| P MSA 5.0W {Cc | 100 35 10 4,0 80 | 500 L.0A 0.4 L.OA 10M | T 2N2649 S|N HPA 8.7W | Cc | 200 65 65 [0 10 O.5A 100M | T 2N2650 S]N HPA 8.7W) Cc } 200 140 140] 0 10 O.5A LOOM | T 2N2651 S|N | 2N2501 8-148 | HSS 360M + A ;{ 200 40 20]0 25 10M | 0.25 10M 350M | T 2N2652 S| N 11-13] DFA 0.3W] A | 200 100 60 {0 50 | 200 L.0OM 1.2 50M 50 ])E 60M | T 2N2652A |S |N 11-13 | DFA 0.3W | A | 200 Loo 60 | 0 50 | 200 L.OM 1.2 50M 50 \E 60M | T 2N2653 Thyristor, see Table on Page 1-154 2N2654 G{P RFC O.IWIA 75 25 25 1.0M 2N2655 S|[N LPA 15W | c | 200 100 100 | 0 30 90 0,24 2.0 0,24 30 |E {0.25M |E 2N2656 S|]N RFA | 0.36W | & | 200 25 15 |0 160 O.1M 0.5 LOM 250M | T 2N2657 S|N PMS | 1.25W | A | 200 80 6010 40} 120 L.0A 0.5 1.04 20M | T 2N2658 S|N PMS | 1.25W ; A | 200 100 80 | 0 40 | 120 1.0A 0.5 1.0A 20M | T 2N2659 G}P LPA 15W | c | 100 50 50 |V 30 90 500M | 0,2 500M 30 {E 280K | T 2N2660 G| P LPA 15W | co | 100 70 70 )V 30 90 500M 0,2 500M 30 | E 280K | T 2N2661 G]P LPA 15w ic | 100 90 90 /1V 30 90 500M 0.2 500M 30 |E 280K | T 2N2662 G]P LPA 15W | c {100 30 50] V 30 90 500M 0.2 500M 30] 280K | T 2N2663 G\P LPA isWw}c | 100 79 7O\ 30 90 500M 0.2 500M 30 )E 280K | T 2N2664 G|P LPA 15W ]c | 100 90 90], V 30 90 500M 0.2 500M 30 /)E 280K | T N2665 G LPA 1aW [2 i100 20 oO | V 50 | 150 S5QoM | 0,2 20 {FE | 300K | T 2N2666 G| P LPA 15W | c { 100 70 7O|V 50 | 150 500M 0.2 500M 50 ,E 300K |T 2N2 667 G]P LPA 15w | c | 100 90 90 | V 50 {150 500M 0,2 500M 50 |E 300K | T 2N2668 G| P LPA usw | c | 100 50 50; V 50 | 150 500M 0.2 500M 50 |E 300K | T 2N2669 G| P LPA 15W ;c ; 100 70 7O/V 50 | 150 500M 0.2 500M 50 ;E 300K | T 2N2670 GuP LPA uw | c | 100 70 TOV 50 | 150 500M. Q.2 500M 50 )E 300K | T 2N2671 G| P RFC O.lW /]A 75 25 40 1.0M 2N2672 G|P RFC O.IW]A 90 25 40 1.0M 2N2672A PR RFC O.1W/A 90 32 32 |S 40 1.0M 2N2673 Ss] N AFA 250M | A | 200 60 45 ]0 |]8.0 22 1.0M 1.5 5.0M 9.0 }E 2,5M/B 2N2674 S|N AFA 250M | A | 200 60 4510 12 40 1.0M 1.5 5.0M 18 /E 5.0M/B 2N2675 S|N AFA 250M {A | 200 60 45 | 0 22 76 1. 0M 1.5 5.0M 37 | E LOM | B 2N2676 S|N AFA 250M [| A | 200 60 45 |0 45 | 290 1L.OM L.5 5.0M 76/5 10M |B 2N2677 S|N AFA 250M | A | 200 45 35 ]0 20 55 1,.0M L.5 5.0M 19 |E LOM | B 2N2678 S| N AFA 250M {A | 200 45 35 ]0 45 ; 150 1.0M 1.5 5.0M 39 | E 20M |B 2N2679 thru Thyristors, see Table 2N2690 2N2691 GI} P 100 80 | Oo 30 | 100 20A | 0,65 20A 6.0M | T 2N2691A |G] P 120 80] 0 50 | 100 20M 2N2692 SIN 45 3040 90 | 360 100* | 0,12 Loo* 42M/T 2N2693 S|TN 45 30/0 40 10* | 0.12 100* 42M | T 2N2694 S|N 45 2010 20 Lo* 10,12 Log* 42M | T 2N2695 S]P 25 2570 30 | 130 50M | 0.25 50M 25 /E 100M | T 2N2696 S| P | 2N2837 8-161 25 25 190 30 | 130 50M | 0.25 50M 25] 100M | T 2N2697 SIN PMS L8W | c | 200 80 60 [0 40 | 120 1.0A 0.5 L.0A 20M | T 2N2698 s|N PMS 18W | c | 200 100 80 | 0 40 | 120 1.0A 0.5 1.04 20M | T 2N2699 G| P |] 2N964 8-74 HSS 150M | A | 100 15 8.0/0 40 | 200 10M | 0,18 10M 300M | T 2N2706 G|P AFG O.5W TA 75 32 32 |S 65 | 120 20M 80 L.3M 1B 2N2707 G IN P Matched Pair; 2N2430 (NPN) and 2N2706 (PNP) 2N2708 sy N 8+155 | RFC 200M | A | 200 35 20190 30 | 200 2.0M 30 [E 2N2709 S| P | 2N2800 8-161) AFA 240M | A | 160 50 35 | 0 10 22 0.2M 0.4 8.0M 200K | B 2N2710 S|N 8-159] HSS 360M | A {200 40 20 [0 40 LOM {0.25 10M 500M | T 2N2711 S| N | MPS2711 5-78 AFC O.2W | A [125 18 18 [0 30 90 2.0M 30], E 2N2712 S| N | MPS2712 5-78 AFC 0,2W | A | 125 18 18/0 75 | 225 2.0M 80]7E 2N2713 S| N | MPS2713 5-80 AFC O.2W TA | 125 18 18] 0 30 90 2.0M 0.3 50M 30/E 2N2714 S| N | MPS2714 5-80 AFC Q.2W [A 1125 18 1g joa 75 | 225 2.0M 0.3 50M 80) E 2N2715 S| N | MPS2715 5-78 AFC O.2Wy}A {125 18 1810 30 90 2.0M 30/E 2N2716 S| N | MPS2716 5-78 AFC 0,2W | A | 125 18 18/0 75 | 225 2.0M 80] E 2N2717 G|P HSS O,1WIA 75 20 15 ]0 50 30M |0.35 10M 300M | T 1-13]Multiple Devices 2n2652 (siticon) Vero = 60 V 2n2652A le = g00.mA Dual NPN silicon transistors for use as a differen- tial amplifier. Pin Connections, Bottom View CASE 32A All Leads Electrically Isolated from Case MAXIMUM RATINGS ceach side) Rating Symbol Value Unit Colector-Emitter Voltage Voro 60 Vde Colector-Base Voltage Vop 100 Vde Emitter-Base Voltage Vip 7.0 Vde Collector Current To 500 mAdc Operating Junction Temperature Range Ty -65 to +200 c Storage Temperature Range T ote -65 to +300 C One | Both Side | Sides Total Device Dissipation @ Ty = 25C Py 0.3 0.6 Watt Derate above 25C 1.72 | 3.43 mw/C Total Device Dissipation @ To = 25C Py 1.0 2.0 Watts To = 100C 0.57 1.14 Watt Derate above 25C 5.7 111.4 mw/C 11-132N2652, 2N2652A (continued) Multiple Devices ELECTRICAL CHARACTERISTICS ceach side) (1, = 25C unless otherwise noted) Characteristic Symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* BV Ro" Vde (Ig = 20 mAdc, I, = 0) 60 - Collector-Base Breakdown Voltage BVoRo Vde (I, = 100 wAde, I, = 0) 100 - Emitter-Base Breakdown Voltage BYE BO Vdc (I,, = 100 wAde, I, = 0) 7.0 - Collector Cutoff Current loRo Adc Von = 50 Vde, in = 0) 2N2652 - 0.010 2N2652A - 0. 002 (Vv = 50 Vde, I, =0, T, = 150C) 2N2652 - 15 cB E A 2N2652A - 10 Emitter Cutoff Current leBo pAdc Vor = 5,0 Vde, Io = 0) 2N2652 - 0.010 2N2652A - 0. 002 ON CHARACTERISTICS DC Current Gain hog - Ig = 100 pAdc, Vor = 5.0 Vdc) 35 - (Io = 1.0 mAdc, Vor = 5.0 Vde) 50 200 (I, = 1.0 mAdc, Vo_ = 5.0 Vde, Ty = -55C) 15 - Collector-Emitter Saturation Voltage Veg (sat) Vde {1 = 50 mAdc, I, = 5.0 mAdc) - 1.2 Cc > B Base-Emitter Saturation Voltage V aK (sat) Vdc (ig = 50 mAdc, T, = 5.0 mAdc) - 0.9 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz Uo = 50 mAdc, Vor = 10 Vdc, f = 20 MHz) 60 - Output Capacitance Cop pF Voz = 10 Vdc, I, = 0, f = 1.0 MHz) - 15 Input Capacitance Cy pF (Vor =0, 0.5 Vdc, io =0, f = 1.0 MHz) - 85 Input Impedance hee k ohms (Ig = 1.0 mAdc, Vor = 5.0 Vde, f = 1.0 kHz) 1.0 10.5 Input Impedance ib ohms =1. dc =5.0 Vdc, f =1. Hz 5 (Ie 1.0 mA : Yop 5.0 Vd 1.0 kHz) 20 3 Small-Signal Current Gain Nie ~ (Io = 1.0 mAdc, Vor = 5.0 Vdc, f = 1.0 kHz} 50 300 Output Admittance Noe ymhos (To = 1.0 mAde, Vor = 5.0 Vdc, f = 1.0 kHz) 4.0 50 Noise Figure NF dB (lo = 0.3 mAde, Vor = 10 Vde, Rg = 510 ohms, B. W. = 1.0 Hz, f = 1.0 kHz) 8.0 MATCHING CHARACTERISTICS DC Current Gain Ratio** h /h + - (Ig = 100 pAdc, Vor = 5.0 Vdc) 2N2652 FEY! PE2 0.85 1.0 2N2652A 0.9 1.0 ({, = 1.0 mAdc, Vor = 5.0 Vdc) 2N2652 0.85 1.0 2N2652A 0.9 1.0 Base Voltage Differential Vv -V mVde (Ig = 100 pAde, Vay, = 5.0 Vae) YE1Y BE2 - 3.0 (I, = 1.0 mAdc, Vor = 5.0 Vde) - 3. Base Voltage Differential Gradient 4(Vne1-" pee) nV/?C (Ie = 100 pAde, Vor = 5.0 Vde, Ty = -55 to +125C) ar - 10 * Pulse Width < 300 us, Duty Cycle < 2% ** i i The lowest of the two hop readings is taken as hort 11-14 for the purpose of measurement.