6
650VCoolMOS™CEPowerTransistor
IPS65R1K5CE
Rev.2.0,2014-09-25Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.1mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.26
3.28
1.50
-ΩVGS=10V,ID=1A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
Gate resistance RG- 6.5 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 225 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 18 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...480V
Effective output capacitance,
time related2) Co(tr) - 42 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 7.7 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Rise time tr- 5.9 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Fall time tf- 18.2 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 1.3 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate to drain charge Qgd - 5.8 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate charge total Qg- 10.5 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V