TF252TH
No. A0842-1/7
Ordering number : ENA0842A
53012 TKIM/70407GB TI IM TC-00000796
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Features
• High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
•
Ultrasmall package facilitates miniaturization in end products
•
Best suited for use in electret condenser microphone for audio equipments and telephones
•
Excellent voltage characteristics
•
Excellent transient characteristics
•
Adoption of FBET process
•
Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage VGDO --20 V
Gate Current IG10 mA
Drain Current ID1mA
Allowable Power Dissipation PD100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7031A-001
TF252TH N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
Product & Package Information
• Package : VTFP
• JEITA, JEDEC : SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
1
3
12
2
3
1.4
1.2
0.8
0.34
0.07 0.07 0.2 0.2
0.25
0.2
0.45
0.1
0 to 0.02
TL
TF252TH-4-TL-H
TF252TH-5-TL-H
1
3
2
LOT No.
LOT No.
D
RANK
TF252TH
No. A0842-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V
Cutoff Voltage VGS(off) VDS=2V, ID=1μA --0.1 --0.4 --1.0 V
Drain Current IDSS VDS=2V, VGS=0V 140* 350* μA
Forward Transfer Admittance | yfs |VDS=2V, VGS=0V, f=1kHz 0.8 1.4 mS
Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF
Reverse Transfer Capacitance Crss 0.95 pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specifi ed Test Circuit.]
Voltage Gain GVVIN=10mV, f=1kHz 1.0 dB
Reduced Voltage Characteristic ΔGVV
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
--0.6 --2.0 dB
Frequency Characteristic ΔGvf f=1kHz to 110Hz --1.0 dB
Total Harmonic Distortion THD VIN=30mV, f=1kHz 0.65 %
Output Noise Voltage VNO VIN=0V, A curve --106 --102 dB
* : The TF252TH is classifi ed by IDSS as follows : (unit : μA)
Rank 4 5
IDSS 140 to 240 210 to 350
Test Circuit
Ordering Information
Device Package Shipping memo
TF252TH-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free
TF252TH-5-TL-H VTFP 8,000pcs./reel
OSC
5pF +
33μF
2.2kΩVCC=2V
VCC=1.5V
V
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
TF252TH
No. A0842-3/7
ID -- VDS ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- μA
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- μA
0 0.5 2.01.0 1.5
300
200
250
100
50
150
0
IT12440
VGS=0V
--0.10V
--0.15V
--0.05V
--0.20V
--0.30V
--0.25V
IT12441
01 5234
350
300
200
250
100
50
150
0
VGS=0V
--0.1V
--0.2V
--0.4V
--0.3V
VGS(off) -- IDSS
| yfs | -- IDSS
Ciss -- VDS Crss -- VDS
Zero-Gate Voltage Drain Current, IDSS -- μA
Forward T ransfer Admittance, | yfs | -- mS
Zero-Gate Voltage Drain Current, IDSS -- μA
Cutoff Voltage, VGS(off) -- V
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Drain-to-Source Voltage, VDS -- V
ID -- VGS
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
--0.20
--0.25
--0.30
--0.35
--0.40
--0.55
--0.50
--0.45
--0.60 VDS=2V
ID=1μA
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
100 150 200 250 300 400350
IT12444
100 150 200 250 300 400350
IT12445
VDS=2V
VGS=0V
f=1kHz
10
7
5
3
2
1.0 1.0 10
23 577523
IT12446
VGS=0V
f=1MHz
IT12447
1.0
7
5
3
3
2
1.0 10
23 577523
VGS=0V
f=1MHz
400
300
200
100
0
IT12442 IT12443
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
IDSS=350μA
250μA
150μA
350
250
50
150
VDS=2V 400
300
200
100
0
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
Ta=75°C
25°C
--25°C
350
250
50
150
VDS=2V
Reverse Transfer Capacitance, Crss -- pF
TF252TH
No. A0842-4/7
GV -- IDSS ΔGVV -- IDSS
Zero-Gate Voltage Drain Current, IDSS -- μA
Voltage Gain, GV -- dB
Zero-Gate Voltage Drain Current, IDSS -- μA
Reduced Voltage Characteristic, ΔGVV -- dB
IT12448
--1.0
--0.8
--0.6
--0.4
--0.2
--0.9
--0.7
--0.5
--0.3
--0.4
--0.2
0
0.4
0.8
1.2
0.2
0.6
1.0
1.8
1.6
1.4
100 150 200 250 300 400350
IT12449
100 150 200 250 300 400350
GV : VCC=2V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
ΔGVV : VCC=2V→1.5V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- mW
THD -- VIN
Input Voltage, VIN -- mV
Total Harmonic Distortion, THD -- %
THD -- IDSS
Zero-Gate Voltage Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
10
2
3
5
7
2
2
3
5
7
1.0
0.1 0 50 100 150 200
IT12450
100 150 200 250 300 400350
250
μ
A
350μA
IDSS=150μA
0
IT12451
0.2
0.4
0.6
1.0
0.8
1.2
1.4 THD : VCC=2V
V
IN=30mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
THD : VCC=2V
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
100
120
80
60
40
20
00 20 40 60 80 100 120 140 160
IT12453
TF252TH
No. A0842-5/7
Taping Specifi cation
TF252TH-4-TL-H, TF252TH-5-TL-H
TF252TH
No. A0842-6/7
Outline Drawing Land Pattern Example
TF252TH-4-TL-H, TF252TH-5-TL-H
Mass (g) Unit
mm Unit: mm
0.0012
* For reference
0.5
0.4
0.45 0.45
0.45 0.45
1.1
TF252TH
PS No. A0842-7/7
This catalog provides information as of May, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
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solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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