MPSA42 MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Units VCES Collector-Emitter Voltage Parameter 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max *MMBTA42 350 2.8 **PZTA42 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . 1997 Fairchild Semiconductor Corporation Units MPSA42 625 5.0 83.3 mW mW/C C/W C/W MPSA42 / MMBTA42 / PZTA42 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 A, IC = 0 6.0 ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 A IEBO Emitter-Cutoff Current VEB = 6.0 V, IC = 0 0.1 A 0.5 V 0.9 V V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 1.0 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 30 mA, VCE = 10 V I C = 20 mA, IB = 2.0 mA VBE( sat) Base-Emitter Saturation Voltage I C = 20 mA, IB = 2.0 mA 25 40 40 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance I C = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz 50 MHz 3.0 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5 Vtf=20 Xtf=150 Rb=10) h FE - DC CURRENT GAIN DC Current Gain vs Collector Current 140 120 125 C 100 25 C 80 60 - 40 C 40 20 0.1 VCE = 5V 1 10 I C - COLLECTOR CURRENT (mA) P 48 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 125 C 0.15 25 C 0.1 0.05 0.1 - 40 C 1 10 I C - COLLECTOR CURRENT (mA) P 48 100 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 VCE = 1V 0.2 0.1 I P 48 1 10 - COLLECTOR CURRENT (mA) Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 100 CAPACITANCE (pF) V CB = 150V 10 T A = 25 C 50 20 Ceb 10 5 C cb 2 1 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 1 10 100 REVERSE BIAS VOLTAGE (V) P 48 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 1 25 100 P 48 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) C SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier