Features
1 of 6
Optimum Technology
Matching ® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
NOT FOR NEW DESIGNS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
XD010-24S-D2F(Y)
1930 MHz to 1990 MHz CLASS A/AB 12 W
CDMA DRIVER AMPLIFIER
RFMD’s XD010-24S-D2F 12 W power module is a robust 2-Stage Class
A/AB amplifier module for use in the driver stages of CDMA RF power
amplifiers. The power transistors are fabricated using RFMD’s latest, high
performance LDMOS process. This unit operates from a single voltage and
has internal temperature compensation of the bias voltage to ensure sta-
ble performance over the full temperature range. It is internally matched
to 50 Ω.
Bias
Network
Temperature
Compensation
VD2
D1
VRF out
RF in
tage 2tage 1
123
4
Case Flange = Ground
Functional Block Diagram
Available in RoHS Compliant
Packaging
50 Ω RF Impedance
12 W output P1dB
Single Supply Operation:
Nominally 28 V
High Gain: 28 dB at 1960 MHz
High Efficiency: 26% at
1960 MHz
Advanced, XeMOS II LDMOS
FETS
Temperature Compensation
Applications
Base Station PA Driver
Repeater
CDMA
GSM/EDGE
EDS-102932 Rev G
NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number)
Package: D
XD010-24S-
D2F(Y)
1930 MHz to
1990 MHz
Class A/AB
12 W CDMA
Driver Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Frequency of Operation 1930 1990 MHz
Output Power at 1dB Compression 10 12 W
Gain 26 28 dB 1 W Output Power
Peak to Peak Gain Variation 0.4 1.0 dB 1930 MHz to 1990 MHz
Drain Efficiency 20 26 % 10 W CW Output
12 % 2 W CDMA (Single Carrier IS-95, 9 Ch Fwd)
6.5 % 1 W CDMA (Single Carrier IS-95, 9 Ch Fwd)
Input Return Loss 10 14 dB 1 W Output Power, 1930 MHz to 1990 MHz
ACPR at 1 W CDMA Power Output -58 dB Single Carrier IS-95, 9 Ch FWD, Offset = 750 KHz,
ACPR Integrated Bandwidth
ALT-1 at 2 W CDMA -70 dB Single Carrier IS-95, 9 Ch FWD, Offset = 1980 KHz,
ACPR Integrated Bandwidth
Third Order IMD -27 -32 dBc 10 W PEP (Two Tone; 1 MHz)
Signal Delay from Pin 1 to Pin 5 2.9 nS
Deviation from Linear Phase (Peak to
Peak) 0.5 Deg
Thermal Resistance Stage 1 (Junc-
tion to Case) 11 °C/W
Thermal Resistance Stage 2 (Junc-
tion to Case) 4 °C/W
Test Conditions: ZIN = ZOUT
= 50 Ω VDD
= 28.0 V IDQ1 = 230 mA IDQ2 = 150 mA TFLANGE = 25°C
9
2 of 6 EDS-102932 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
XD010-24S-D2F(Y)
Simplified Device Schematic
Absolute Maximum Ratings
Parameter Rating Unit
1st Stage Bias Voltage (VD1)35 V
2nd Stage Bias Voltage (VD2)35 V
RF Input Power +20 dBm
Load Impedance for Continuous
Operation Without Damage 5:1 VSWR
Output Device Channel Temperature +200 °C
Operating Temperature Range -20 to +90 °C
Storage Temperature Range -40 to +100 °C
ESD Rating - Human Body Model,
JEDEC Document -
JESD22-A114-B
8000 V
MTTF - 85°C Leadframe, 200°C
Channel 1.2 x 106Hours
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
4 of 6 EDS-102932 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
XD010-24S-D2F(Y)
Note 1: The internally generated gate voltage is thermally compensated to maintain constant quiescent current over the
temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can
only be accomplished with AGC external to the module.
Note 2: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.
Note 3: This module was designed to have its leads hand soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° F, and the soldering iron tip should not be in direct contact with the lead for longer
than 10 seconds. Refer to app note AN060 (www.RFMD.com) for further installation instructions.
Test Board Layout
Pin Function Description
1 RFIN Module RF input. Care must be taken to protect against video transients that may damage the active devices.
2 VD1 This is the bias feed for the first stage of the amplifier module. The gate bias is temperature compensated to maintain
constant current over the operating temperature range. See Note 1.
3, 4 VD2 This is the bias feed for the second stage of the amplifier module. The gate bias is temperature compensated to main-
tain constant current over the operating temperature range. See Note 1.
5 RFOUT Module RF output. Care must be taken to protect against video transients that may damage the active devices.
Flange GND Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for
optimum thermal and RF performance. See mounting instructions for recommendation
5 of 6
NOT FOR NEW DESIGNS
EDS-102932 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
XD010-24S-D2F(Y)
Test Board Schematic with module connections shown
Test Board Bill of Materials
Component Description Manufacturer
PCB Rogers 4350, er=3.5, Thickness=30mils Rogers
J1, J2 SMA, RF, Panel Mount Tab W / Flange Johnson
J3 MTA Post Header, 6 Pin, Rectangle, Polarized, Surface Mount AMP
C1, C10 Cap, 10mF, 35V, 10%, Tant, Elect, D Kemet
C2, C20 Cap, 0.1mF, 100V, 10%, 1206 Johanson
C3, C30 Cap, 1000pF, 100V, 10%, 1206 Johanson
C25, C26 Cap, 68pF, 250V, 5%, 0603 ATC
C21, C22 Cap, 0.1mF, 100V, 10%, 0805 Panasonic
C23, C24 Cap, 1000pF, 100V, 10%, 0603 AVX
Mounting Screws 4-40 X 0.250” Various
6 of 6 EDS-102932 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
XD010-24S-D2F(Y)
Package Outline Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Recommended PCB Cutout and Landing Pads for the D2F Package
Dimensions in inches (millimeters)
