22 GHz to 38 GHz, GaAs, MMIC,
Double Balanced Mixer
Data Sheet HMC560ALM3
Rev. 0 Document Feedback
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FEATURES
Downconverter
Conversion loss
10 dB typical for 22 GHz to 29 GHz
11 dB typical for 29 GHz to 38 GHz
LO to RF isolation
34 dB typical for 22 GHz to 29 GHz
38 dB typical for 29 GHz to 38 GHz
LO to IF isolation
29 dB typical for 22 GHz to 29 GHz
31 dB typical for 29 GHz to 38 GHz
RF to IF isolation
24 dB typical for 22 GHz to 29 GHz
39 dB typical for 29 GHz to 38 GHz
Input IP3
20 dBm typical for 22 GHz to 29 GHz
19.5 dBm typical for 29 GHz to 38 GHz
IF bandwidth: dc to 18 GHz
Passive, no dc bias required
APPLICATIONS
Point to point radios
Point to multipoint radios and very small aperture terminal
(VSAT) radios
Test equipment and sensors
Military end use
FUNCTIONAL BLOCK DIAGRAM
PACKAGE
BASE
4
RF
GND
3
NIC
2
NIC
1
NIC
6
LO
5
HMC560ALM3
IF
17001-001
Figure 1.
GENERAL DESCRIPTION
The HMC560ALM3 chip is a general-purpose, double balanced
mixer that can be used as an upconverter or downconverter
from 22 GHz to 38 GHz in a small chip area. This mixer
requires no external component or matching circuitry.
The HMC560ALM3 provides excellent local oscillator (LO) to
radio frequency (RF) and LO to intermediate frequency (IF)
suppression due to optimized balun structures. The mixer
operates with LO drive levels above 9 dBm.
HMC560ALM3 Data Sheet
Rev. 0 | Page 2 of 22
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance ......................................................6
Upconverter Performance ......................................................... 12
Isolation and Return Loss ......................................................... 16
IF Bandwidth—Downconverter ............................................... 18
Spurious and Harmonics Performance ................................... 19
Theory of Operation ...................................................................... 20
Applications Information .............................................................. 21
Typical Application Circuit ....................................................... 21
Evaluation PCB Information .................................................... 21
Outline Dimensions ....................................................................... 22
Ordering Guide .......................................................................... 22
REVISION HISTORY
6/2019—Revision 0: Initial Version
Data Sheet HMC560ALM3
Rev. 0 | Page 3 of 22
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, IF = 1 GHz, LO drive level = 13 dBm, RF frequency range = 22 GHz to 29 GHz, all measurements performed as a
downconverter with the upper sideband selected, unless otherwise noted.
Table 1.
Parameter Symbol Min Typ Max Unit
FREQUENCY RANGE
Radio Frequency RF 22 29 GHz
Local Oscillator LO 22 29 GHz
Intermediate Frequency IF dc 18 GHz
CONVERSION LOSS 10 14 dB
NOISE FIGURE 10.5 dB
ISOLATION
LO to RF 34 dB
LO to IF 16 29 dB
RF to IF 8 24 dB
INPUT THIRD-ORDER INTERCEPT IP3 9 20 dBm
INPUT SECOND-ORDER INTERCEPT IP2 38 dBm
INPUT POWER
1 dB Compression P1dB 9 dBm
UPCONVERTER PERFORMANCE
Conversion Loss 10 dB
IP3 13.5 dBm
RETURN LOSS
RF 7 dB
LO 8 dB
TA = 25°C, IF = 1 GHz, LO drive level = 13 dBm, RF frequency range = 29 GHz to 38 GHz, all measurements performed as a
downconverter with the upper sideband selected, unless otherwise noted.
Table 2.
Parameter Symbol Min Typ Max Unit
FREQUENCY RANGE
Radio Frequency RF 29 38 GHz
Local Oscillator LO 29 38 GHz
Intermediate Frequency IF dc 18 GHz
CONVERSION LOSS 11 15 dB
NOISE FIGURE 11.5 dB
ISOLATION
LO to RF 38 dB
LO to IF 10 31 dB
RF to IF 11 39 dB
INPUT THIRD-ORDER INTERCEPT IP3 9 19.5 dBm
INPUT SECOND-ORDER INTERCEPT IP2 38 dBm
INPUT POWER
1 dB Compression P1dB 11.5 dBm
UPCONVERTER PERFORMANCE
Conversion Loss 9 dB
IP3 16.5 dBm
RETURN LOSS
RF 14 dB
LO 7 dB
HMC560ALM3 Data Sheet
Rev. 0 | Page 4 of 22
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
RF Input Power 25 dBm
LO Input Power 23 dBm
IF Input Power 25 dBm
IF Source and Sink Current 2 mA
Channel Temperature 150°C/W
Maximum Peak Reflow Temperature (MSL3) 260°C
Continuous Power Dissipation, PDISS
(TA = 85°C, Derate 5.3 mW/°C Above 85°C)
344 mW
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 500 V
Field Induced Charged Device Model
(FICDM)
1250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention
to PCB thermal design is required. θJC is the junction to case
thermal resistance, from the channel to the bottom of the die.
Table 4. Thermal Resistance
Package Type θJA θ
JC Unit
CE-6-3 67.6 188 °C/W
ESD CAUTION
Data Sheet HMC560ALM3
Rev. 0 | Page 5 of 22
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
PACKAGE
BASE
4
RF
3
NIC
2
NIC
1
NIC
6
LO
5
IF
NOTES
1. NIC = NOT INTERNALLY CONNECTED. THES
E
PI NS CAN BE CONNE CT E D T O RF/ D C G ROUND
WITHOUT AFFECTING PERFORMANCE.
2
. EXPOSED PAD. T HE EXP O S ED PAD MUST BE
CO NNECT E D TO RF AND DC GROUND.
GND
HMC560ALM3
TOP V I EW
(Not to Scale)
17001-002
Figure 2.
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 3 NIC Not Internally Connected. No connection is required. These pins can be connected to RF/dc ground without
affecting performance.
4 RF Radio Frequency Port. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the RF interface schematic.
5 IF
Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, dc block
this port externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For
operation to dc, this pin must not source or sink more than 2 mA of current or die malfunction and possible
die failure may result. See Figure 5 for the IF interface schematic.
6 LO Local Oscillator Port. This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the LO interface schematic.
Exposed Pad GND Exposed Pad. The exposed pad must be connected to RF and dc ground. See Figure 3 for the GND interface
schematic.
INTERFACE SCHEMATICS
G
ND
17001-003
Figure 3. GND Interface Schematic
L
O
17001-004
Figure 4. LO Interface Schematic
IF
17001-005
Figure 5. IF Interface Schematic
RF
17001-006
Figure 6. RF Interface Schematic
HMC560ALM3 Data Sheet
Rev. 0 | Page 6 of 22
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE
Downconverter Performance at IF = 1 GHz, Upper Sideband
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
40°C
17001-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
40°C
17001-008
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
60
0
INPUT IP2 (dBm)
10
30
50
20
40
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-009
Figure 9. Input IP2 vs. RF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-011
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
60
0
INPUT IP2 (dBm)
10
30
50
20
40
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-012
Figure 12. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 7 of 22
20
0
INPUT P1dB (d Bm)
4
12
8
16
20 36
RF F REQUENCY (G Hz)
22 26 3024 28 32 34
+85°C
+25°C
–40°C
17001-013
Figure 13. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
20 4022 26 3024 28 32 34 36 38
20
0
NOISE F I GURE (dB)
4
12
8
16
RF F REQUENCY (G Hz)
17001-014
Figure 14. Noise Figure vs. RF Frequency at TA = 25°C, LO = 13 dBm
20
0
INPUT P1dB (d Bm)
4
12
8
16
20 36
RF F REQUENCY (G Hz)
22 26 3024 28 32 34
15dBm
13dBm
11dBm
9dBm
17001-015
Figure 15. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC560ALM3 Data Sheet
Rev. 0 | Page 8 of 22
Downconverter Performance at IF = 10 GHz, Upper Sideband
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
28 40
RF F REQUENCY (G Hz)
30 32 34 36 38
+85°C
+25°C
–40°C
17001-016
Figure 16. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
+85°C
+25°C
–40°C
28 4030 32 34 36 38
17001-017
Figure 17. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
28 40
RF F REQUENCY (G Hz)
30 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-018
Figure 18. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
28 4030 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-019
Figure 19. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 9 of 22
Downconverter Performance at IF = 1 GHz, Lower Sideband
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
40°C
17001-020
Figure 20. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
40°C
17001-021
Figure 21. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-022
Figure 22. Conversion Gain vs. RF Frequency at Various LO Power
Levels, TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-023
Figure 23. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC560ALM3 Data Sheet
Rev. 0 | Page 10 of 22
60
0
INPUT IP2 (dBm)
10
30
50
20
40
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
40°C
17001-024
Figure 24. Input IP2 vs. RF Frequency at Various Temperatures, TA = 25°C
20
0
INPUT P1dB (dBm)
4
8
12
16
20 40
RF FREQUENCY ( GHz)
22 26 3024 28 32 34 36 38
17001-025
Figure 25. Input P1dB vs. RF Frequency at Various LO Power Levels, TA = 25°C
60
0
INPUT IP2 (dBm)
10
30
50
20
40
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-026
Figure 26. Input IP2 vs. RF Frequency at Various LO Power Levels, TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 11 of 22
Downconverter Performance at IF = 10 GHz, Lower Sideband
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 32
RF F REQUENCY (G Hz)
22 26 3024 28
+85°C
+25°C
–40°C
17001-027
Figure 27. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
+85°C
+25°C
–40°C
20 3222 26 3024 28
17001-028
Figure 28. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 32
RF F REQUENCY (G Hz)
22 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-029
Figure 29. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
20 3222 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-030
Figure 30. Input IP3 vs. RF Frequency at Various LO Power Levels, TA = 25°C
HMC560ALM3 Data Sheet
Rev. 0 | Page 12 of 22
UPCONVERTER PERFORMANCE
Upconverter Performance at IF = 1 GHz, Upper Sideband
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-031
Figure 31. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-032
Figure 32. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
20
0
INPUT P1dB (d Bm)
4
8
12
16
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
17001-033
Figure 33. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-034
Figure 34. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
20 40
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-035
Figure 35. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 13 of 22
Upconverter Performance at IF = 10 GHz, Upper Sideband
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
28 40
RF FREQUENCY ( GHz)
30 34 3832 36
+85°C
+25°C
40°C
17001-036
Figure 36. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF FREQUENCY ( GHz)
+85°C
+25°C
40°C
28 4030 34 3832 36
17001-037
Figure 37. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
28 40
RF FREQUENCY ( GHz)
30 34 3832 36
15dBm
13dBm
11dBm
9dBm
17001-038
Figure 38. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF FREQUENCY ( GHz)
28 4030 34 3832 36
15dBm
13dBm
11dBm
9dBm
17001-039
Figure 39. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC560ALM3 Data Sheet
Rev. 0 | Page 14 of 22
Upconverter Performance at IF = 1 GHz, Lower Sideband
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
20 32
RF FREQUENCY ( GHz)
22 26 3024 28
+85°C
+25°C
40°C
17001-040
Figure 40. Conversion Gain vs. RF Frequency at Various Temperatures
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF FREQUENCY ( GHz)
+85°C
+25°C
40°C
20 3222 26 3024 28
17001-041
Figure 41. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
20 32
RF FREQUENCY ( GHz)
22 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-042
Figure 42. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF FREQUENCY ( GHz)
20 3222 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-043
Figure 43. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 15 of 22
Upconverter Performance at IF = 10 GHz, Lower Sideband
0
–20
CONV ERSIO N G A IN (dB)
–16
–12
–8
–4
20 32
RF FREQUENCY ( GHz)
22 26 3024 28
+85°C
+25°C
40°C
17001-044
Figure 44. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
+85°C
+25°C
–40°C
20 3222 26 3024 28
17001-045
Figure 45. Input IP3 vs. RF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
20 32
RF F REQUENCY (G Hz)
22 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-046
Figure 46. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
RF F REQUENCY (G Hz)
20 3222 26 3024 28
15dBm
13dBm
11dBm
9dBm
17001-047
Figure 47. Input IP3 vs. RF Frequency at Various LO Power Levels, TA = 25°C
HMC560ALM3 Data Sheet
Rev. 0 | Page 16 of 22
ISOLATION AND RETURN LOSS
Downconverter performance at IF = 1 GHz, upper sideband (low-side LO).
70
0
LO TO RF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-048
Figure 48. LO to RF Isolation vs. LO Frequency at Various Temperatures,
LO = 13 dBm
70
0
LO TO IF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-049
Figure 49. LO to IF Isolation vs. LO Frequency at Various Temperatures,
LO = 13 dBm
70
0
RF TO IF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
+85°C
+25°C
–40°C
17001-050
Figure 50. RF to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
70
0
LO TO RF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-051
Figure 51. LO to RF Isolation vs. LO Frequency at Various LO Power Levels,
TA = 25°C
70
0
LO TO IF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-052
Figure 52. LO to IF Isolation vs. LO Frequency at Various LO Power Levels,
TA = 25°C
70
0
RF TO IF ISOLATION (dB)
20
40
60
10
30
50
20 40
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
15dBm
13dBm
11dBm
9dBm
17001-053
Figure 53. RF to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 17 of 22
0
–30
LO RETURN LOSS (dB)
–25
–20
–15
–10
–5
20 4240
LO F RE Q UENCY ( G H z)
22 26 3024 28 32 34 36 38
17001-054
Figure 54. LO Return Loss vs. LO Frequency at Various Temperatures,
LO = 13 dBm
0
–30
RF RETURN LOSS ( dB)
–25
–20
–15
–10
–5
20 4240
RF F REQUENCY (G Hz)
22 26 3024 28 32 34 36 38
17001-055
Figure 55. RF Return Loss vs. RF Frequency at Various Temperatures,
LO = 29 GHz, 13 dBm
0
–30
IF RETURN LOSS ( dB)
–25
–20
–15
–10
–5
IF F REQUENCY (GHz)
02026104 8 12 14 16 18
17001-056
Figure 56. IF Return Loss vs. IF Frequency at Various Temperatures,
LO = 29 GHz, 13 dBm
HMC560ALM3 Data Sheet
Rev. 0 | Page 18 of 22
IF BANDWIDTH—DOWNCONVERTER
Upper sideband, LO frequency = 24 GHz.
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
+85°C
+25°C
–40°C
IF F REQUENCY (GHz)
02026104 8 12 14 16 18
17001-057
Figure 57. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 13 dBm
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
+85°C
+25°C
–40°C
IF F REQUENCY (GHz)
02026104 8 12 14 16 18
17001-058
Figure 58. Input IP3 vs. IF Frequency at Various Temperatures, LO = 13 dBm
0
–20
CONV ERSIO N GAI N ( dB)
–16
–12
–8
–4
IF F REQUENCY (GHz)
02026104 8 12 14 16 18
15dBm
13dBm
11dBm
9dBm
7dBm
17001-059
Figure 59. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
40
0
INPUT IP3 (dBm)
5
15
25
35
10
20
30
IF F REQUENCY (GHz)
02026104 8 12 14 16 18
15dBm
13dBm
11dBm
9dBm
7dBm
17001-060
Figure 60. Input IP3 vs. IF Frequency at Various LO Power Levels, TA = 25°C
Data Sheet HMC560ALM3
Rev. 0 | Page 19 of 22
SPURIOUS AND HARMONICS PERFORMANCE
Mixer spurious products are measured in dBc from the IF output power level. N/A means not applicable.
LO Harmonics
LO power = 13 dBm, TA =25°C, and all values are in dBc below
the input LO level measured at the RF port.
N × LO Spur at the RF Port
LO Frequency (GHz) 1 2 3
24 +1 +40 N/A
30 −3 N/A N/A
36 −19 N/A N/A
Downconverter, Upper Sideband, M × N Spurious
Outputs
Mixer spurious products are measured in dBc from the IF output
power level. N/A means not applicable.
Spur values are (M × RF) − (N × LO). RF = 24 GHz at −10 dBm,
LO = 23 GHz at 13 dBm.
N × LO
0 1 2 3 4
M × RF
0 N/A 1 40 N/A N/A
1 10 0 30 40 N/A
2 61 64 50 60 65
3 N/A 63 73 61 74
4 N/A N/A 60 72 81
Downconverter, Lower Sideband, M × N Spurious
Outputs
Spur values are (M × RF) − (N × LO). RF = 24 GHz at −10 dBm,
LO = 25 GHz at 13 dBm.
N × LO
0 1 2 3 4
M × RF
0 N/A 1 33 N/A N/A
1 8 0 32 N/A N/A
2 63 57 51 59 N/A
3 N/A 61 76 63 74
4 N/A N/A 63 76 80
Upconverter, Upper Sideband, M × N Spurious Outputs
Mixer spurious products are measured in dBc from the RF output
power level. N/A means not applicable.
IFIN = 1 GHz at −10 dBm, LO = 23 GHz at 13 dBm.
N × LO
0 1 2 3 4
M × IFIN
−4 79 77 65 N/A N/A
−3 61 55 64 N/A N/A
−2 54 41 56 N/A N/A
−1 13 0 31 N/A N/A
0 N/A 1 17 N/A N/A
+1 13 0 40 N/A N/A
+2 54 47 51 N/A N/A
+3 61 53 62 N/A N/A
+4 92 74 61 N/A N/A
Upconverter, Lower Sideband, M × N Spurious Outputs
IFIN = 1 GHz at −10 dBm, LO = 25 GHz at 13 dBm.
N × LO
0 1 2 3 4
M × IFIN
−4 82 76 63 N/A N/A
−3 54 46 60 N/A N/A
−2 49 38 43 N/A N/A
−1 13 0 49 N/A N/A
0 N/A 3 10 N/A N/A
+1 13 0 N/A N/A N/A
+2 49 47 N/A N/A N/A
+3 54 52 N/A N/A N/A
+4 78 72 N/A N/A N/A
HMC560ALM3 Data Sheet
Rev. 0 | Page 20 of 22
THEORY OF OPERATION
The HMC560ALM3 is a general-purpose, double balanced
mixer that can be used as an upconverter or a downconverter
from 22 GHz to 38 GHz.
When used as a downconverter, the HMC560ALM3 downconverts
RF between 22 GHz and 38 GHz to IF values between dc and
18 GHz.
When used as an upconverter, the mixer upconverts IF values
between dc and 18 GHz to RF values between 22 GHz and 38 GHz.
The mixer performs well with LO drive values of 13 dBm or
greater and provides excellent LO to RF and LO to IF
suppression due to optimized balun structures.
Data Sheet HMC560ALM3
Rev. 0 | Page 21 of 22
APPLICATIONS INFORMATION
TYPICAL APPLICATION CIRCUIT
Figure 61 shows the typical application circuit for the
HMC560ALM3. The HMC560ALM3 is a passive device and
does not require any external components. The LO and RF pins
are internally ac-coupled. When IF operation is not required
until dc, it is recommended to use an ac-coupled capacitor at
the IF port.
PACKAGE
BASE
4
RF
GND
3
NIC
2
NIC
1
NIC
6
LO
5
HMC560ALM3
IF
17001-061
Figure 61. Typical Application Circuit
EVALUATION PCB INFORMATION
The PCB used in this application must use RF circuit design
techniques. Signal lines must have 50 Ω impedance, and the
package ground lead and exposed pad must be connected
directly to the ground planes. The grounded coplanar wave
guide (CPWG) PCB input/output transitions allow the use of
ground signal ground (GSG) probes for testing. The suggested
probe pitch is 400 mm (16 mils). The evaluation circuit board
shown in Figure 62 is available from Analog Devices, Inc., upon
request.
17001-062
Figure 62. EV1HMC560ALM3 Evaluation PCB
HMC560ALM3 Data Sheet
Rev. 0 | Page 22 of 22
OUTLINE DIMENSIONS
5.21
5.08 SQ
4.95
0.59
0.46
0.33
2.67
2.54
2.41
1.00
BSC
BOTTOM VI EW
TOP VI EW
SIDE VIEW
1.50
1.37
1.24
0.55
0.42
0.29
0.25 REF
PIN 1
INDICATOR
AREA
1.14
1.01
0.88
07-17-2018-B
PKG-000000
1
3
4
5
6
EXPOSED
PAD
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONF IG URAT ION AND
FUNCT I ON DESCRI P T IO NS
SECT I ON OF THI S DAT A S HE ET.
DETAIL A
1.68
1.55
1.42
0.49
0.36
0.23
1.65
1.52 SQ
1.39 0.84
0.71
0.58
DETAI L A
SEATING
PLANE
Figure 63. 6-Terminal Chip Array Small Outline No Lead Cavity [LGA_CAV]
5.08 mm × 5.08 mm Body and 1.01 mm Package Height
(CE-6-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
HMC560ALM3 −40°C to +85°C 6-Terminal Chip Array Small Outline No Lead Cavity [LGA_CAV] CE-6-3
HMC560ALM3TR −40°C to +85°C 6-Terminal Chip Array Small Outline No Lead Cavity [LGA_CAV] CE-6-3
EV1HMC560ALM3 Evaluation PCB Assembly
1 The HMC560ALM3 and HMC560ALM3TR are RoHS compliant devices.
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D17001-0-6/19(0)