CYStech Electronics Corp. Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 1/3 Small Signal Schottky diode RB751S-40C2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package. Features *Extremely small surface mounting type.(SC-79/SOD523) *Low reverse current and low forward voltage *High reliability Applications Low current rectification and high speed switching Symbol Outline RB751S-40C2 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature Tstg .................................................................................................... -45~+125C Junction Temperature Tj .............................................................................................................. +125C * Maximum Voltages and Currents (Ta=25C) Peak Reverse Voltage VRM..................................................................................... 40 V DC Reverse Voltage VR ...................................................................................................................... 30 V Mean Rectifying Current IF ........................................................................................................... 30 mA Peak Forward Surge Current IFSM......................................... ..............................................200 mA RB751S-40C2 CYStek Product Specification Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 2/3 CYStech Electronics Corp. Characteristics (Ta=25C) Characteristic Symbol Condition Min. Forward Voltage VF IF=1mA - Typ - Max. Unit 370 mV Reverse Leakage Current IR VR=30V - - 0.5 A Capacitance Between Terminals CT VR=1V, f=1MHz - 2 - pF Characteristic Curves Forward Current vs Forward Voltage Forward Current Derating Curve 100 M ounting on glass epoxy PCBs 100 Forward Current---I F(mA) Percentage of Rated Forward Current---(%) 120 80 60 40 10 125 1 75 25 0.1 20 - 25 0 0.01 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 Ambient Temperature---TA() Forward Voltage---VF(V) Reverse Leakage Current vs Reverse Voltage Capacitance vs Reverse Voltage 0.5 10 T a= 125 10 T a= 75 1 0.1 T a= 25 Ta=-25 0.01 Typ. pulse easurement Capacitance between terminals---C T(pF) 100 Reverse Leakage Current---IR(A) T yp. pulse measurement f=1MHz Ta=25 1 0.001 0 10 20 Reverse Voltage---VR(V) RB751S-40C2 30 0 2 4 6 8 10 12 14 Reverse Voltage---VR(V) CYStek Product Specification Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 3/3 CYStech Electronics Corp. SOD-523 Dimension Marking Code : 1 1 2 5 Style : Pin 1. Cathode 2. Anode 2 2-lead SOD-523 Plastic Package CYStek Package Code : C2 *: Typical Millimeters DIM Min 0.5 0.25 0.1 1.1 A bp c D .Max. 0.7 0.35 0.2 1.3 DIM E HE V Millimeters Min. 0.7 1.5 Max. 0.9 1.7 0.15(typ) Notes: 1.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 2.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. RB751S-40C2 CYStek Product Specification