BD7150NUV - ROHM Co., Ltd.

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www.rohm.com 2011.05 - Rev.C

Compact Headphone Amplifiers

Headphone Amplifier

Designed for 0.93V Low Voltage Operation

BU7150NUV

●Description

BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C).

BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For

BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output

power is 85mW at RL = 8Ω in BTL mode.

●Features

1) Wide battery operation Voltage (0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C)

2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation

3) Unity-gain stability

4) Click and pop-noise reduction circuit built-in

5) Shutdown mode(Low power mode)

6) High speed turn-on mute mode

7) Thermal shutdown protection circuit

8) Power-on reset circuit not sensed during start-up slew rate of supply voltage

9) Small package (VSON010V3030)

●Applications

Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc..

●Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Ratings Unit

Supply Voltage VDD 4.5 V

Input Voltage VIN VSS-0.3~VDD+0.3 V

Input Current IIN -10~10 mA

Power Dissipation PD 560 * mW

Storage Temperature Range TSTG -55~+150 °C

*For operating over 25°C, de-rate the value at 5.6mW/°C.

This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer.

●Operating conditions

Parameter Symbol

Ratings Unit

Min. Typ. Max.

Operation Temperature Range TOPR -40 - 85 °C

Supply Voltage (Note 1,2) VDD 0.93 - 3.5 V

Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C.

If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C.

(But, it is not the one which guarantees the standard value for electric characteristics.)

Note 2: Ripple in power supply line should not exceed 400mVP-P.(VDD=1.5 V, Ta=25°C )

No.11102ECT01

Technical Note

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BU7150NUV

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●Electrical characteristics

Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified.

Parameter Symbol

Limits Unit Conditions

Min. Typ. Max.

No Signal Operating Current IDD - 1 1.4 mA No load, No signal

Shutdown Current ISD - 3 9 μA SDB Pin=VSS

Mute Current IMUTE - 15 - μA MUTEB Pin=VSS, SE

Output Offset Voltage VOFS - 5 50 mV | VOUT1 – VOUT2 |, No signal

Maximum Output Power PO

70 85 - mW RL=8Ω, BTL, THD+N=1%

- 14 - mW RL=16Ω, SE, THD+N=1%

Total Harmonic Distortion +Noise THD+N

- 0.2 0.5 % 20kHz LPF, RL=8Ω, BTL, PO=25mW

- 0.1 0.5 % 20kHz LPF, RL=16Ω, SE,PO=5ｍW

Output Voltage Noise VNO - 10 - μVrms 20kHz LPF + A-weight

Crosstalk CT - 85 - dB RL=16Ω, SE, 1kHz BPF

Power Supply Rejection Ratio PSRR

- 62 - dB

Ripple voltage=200mVP-P,

RL=8Ω, BTL, CBYPASS=4.7μF

- 66 - dB

Ripple voltage=200mVP-P,

RL=16Ω, SE, CBYPASS=4.7μF

Input Logic High Level VIH 0.7 - - V MUTEB Pin, SDB Pin

Input Logic Low Level VIL - - 0.3 V MUTEB Pin, SDB Pin

“BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS.

Turn-on time in BTL mode is about 11 times faster than single-ended mode.

Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode.

●Block diagram

Fig. 1 Block diagram

Bias

Generator

Control Logic

IN1

BYPASS

MUTEB

VDD

MODE

OUT1SDB

IN2

OUT2

VSS

TOP VIEW

Technical Note

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BU7150NUV

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●Electrical characteristics waveform (Reference data)

Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35.

Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode）

VDD=1.5V, SE mode

-70

-60

-50

-40

-30

-20

-10

10n 100n 1u 10u 100u 1m 10m 100m

THD+N [dB]

VDD=1.5V, Po=5mW,

SE mode, BW<80kHz

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

THD+N [dB]

VDD=1.2V, SE mode

-60

-50

-40

-30

-20

-10

10n 100n 1u 10u 100u 1m 10m 100m

THD+N [dB]

VDD=1.2V, Po=2.5m W,

SE mode, BW<80kHz

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

THD+N [dB]

VDD=1.5V, BTL mode

-70

-60

-50

-40

-30

-20

-10

10n 100n 1u 10u 100u 1m 10m 100m

THD+N [dB]

VDD=1.2V, BTL mode

-60

-50

-40

-30

-20

-10

10n 100n 1u 10u 100u 1m 10m 100m

THD+N [dB]

VDD=1.5V, Po=25mW,

BTL mode, BW<80kHz

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

THD+N [dB]

VDD=1.2V, Po=10mW,

BTL mode, BW<80kHz

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

THD+N [dB]

Ou tput Po wer [W]

Fig. 2 THD+N vs. Output Power

Ou tput Po wer [W]

Fig. 3 THD+N vs. Output Power

Ou tput Po wer [W]

Fig. 4 THD+N vs. Output Power

Ou tput Po wer [W]

Fig. 5 THD+N vs. Output Power

Frequency [Hz]

Fig. 6 THD+N vs. Frequency

Frequency [Hz]

Fig. 7 THD+N vs. Frequency

Frequency [Hz]

Fig. 9 THD+N vs. Frequency

Frequency [Hz]

Fig. 8 THD+N vs. Frequency

Technical Note

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VDD=1.5V, Po=5mW, SE mode

-50

-40

-30

-20

-10

10 100 1k 10k 100k 1M

Gain [dB]

VDD=1.5V, SE mode

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

-100 -80 -60 -40 -20 0

Output Level [dBV]

VDD=1.2V, SE mode

-120

-100

-80

-60

-40

-20

-120 -100 -80 -60 -40 -20 0

Ou tput Level [dBV]

VDD=1.2V, Po=2.5mW, SE mode

-50

-40

-30

-20

-10

10 100 1k 10k 100k 1M

Gain [dB]

VDD=1.5V, BTL mode

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

-100 -80 -60 -40 -20 0

Output Level [dBV]

VDD=1.2V, BTL mode

-120

-100

-80

-60

-40

-20

-120 -100 -80 -60 -40 -20 0

Output Level [dBV]

VDD=1.5V, Po=25mW, BTL mode

-50

-40

-30

-20

-10

10 100 1k 10k 100k 1M

Gain [dB]

VDD=1.2V, Po=10mW, BTL mode

-50

-40

-30

-20

-10

10 100 1k 10k 100k 1M

Gain [dB]

Input Level [dBV]

Fig. 10 Output Level vs. Input Level

Input Level [dBV]

Fig. 11 Output Level vs. Input Level

Frequency [Hz]

Fig. 16 Gain vs. Frequency

Frequency [Hz]

Fig. 17 Gain vs. Frequency

Input Level [dBV]

Fig. 12 Output Level vs. Input Level

Input Level [dBV]

Fig. 13 Output Level vs. Input Level

Frequency [Hz]

Fig. 14 Gain vs. Frequency

Frequency [Hz]

Fig. 15 Gain vs. Frequency

Technical Note

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BU7150NUV

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SE mode

100

120

140

01234

Power [mW]

THD+N = 10%

THD+N = 1%

BTL mode

100

200

300

400

500

600

700

800

900

1000

01234

Power [mW]

THD+N = 10%

THD+N = 1%

BTL mode

Zoom up

100

120

140

160

180

200

0.0 0.5 1.0 1.5 2.0

Power [mW]

THD+N = 10%

THD+N = 1%

SE mode

Zoom up

0.0 0.5 1.0 1.5 2.0

Power [mW]

THD+N = 10%

THD+N = 1%

VDD=1.2V, Input=200mV

P-P

SE m o de , Input Te rm inated in to 10Ω

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

PSRR [dB]

VDD=1.5V, Input=200mV

P-P

SE m ode, Input Term inated into 10Ω

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

PSRR [dB]

VDD=1.5V, Input=200mV

P-P

BTL m ode, Input Term inate d into 10Ω

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

PSRR [dB]

VDD=1.2V, Input=200mV

P-P

BTL m ode, Input Term inated into 10Ω

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1k 10k 100k

PSRR [dB]

Supply Voltage [V]

Fig. 18 Maximum output Power vs. Supply Voltage

Supply Voltage [V]

Fig. 19 Maximum output Power vs. Supply Voltage

Supply Voltage [V]

Fig. 20 Maximum output Power vs. Supply Voltage

Supply Voltage [V]

Fig. 21 Maximum output Power vs. Supply Voltage

Frequency [Hz]

Fig. 22 PSRR vs. Frequency

Frequency [Hz]

Fig. 23 PSRR vs. Frequency

Frequency [Hz]

Fig. 24 PSRR vs. Frequency

Frequency [Hz]

Fig. 25 PSRR vs. Frequency

×:WC (PO=70 m W

TH D+N=1% )

Technical Note

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BU7150NUV

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SE m ode, Input=no s ignal

0.2

0.4

0.6

0.8

1.2

01234

IDD [mA]

SE m o de , Input=no s ignal

0.5

1.5

2.5

3.5

4.5

01234

ISD [μA]

VDD=1.5V, Input=400mV

P-P

, SE mode

-90

-85

-80

-75

-70

-65

-60

-55

-50

10 100 1k 10k 100k

MU TE Level [dB]

VDD=1.5V, Input=400mV

P-P

SE mode, Input Terminated into 10Ω

-120

-110

-100

-90

-80

-70

-60

-50

-40

10 100 1k 10k 100k

Crosstalk [dB]

VDD=1.2V, Input=400mV

P-P

SE m ode, Input Term inated into 10Ω

-120

-110

-100

-90

-80

-70

-60

-50

-40

10 100 1k 10k 100k

Crosstalk [dB]

VDD=1.5V, SE mode, 20kHz LPF + A-weight

-160

-140

-120

-100

-80

-60

-40

-20

10 100 1k 10k 100k

Noise Level [dBV]

VDD=1.5V, BTL mode, 20kHz LPF + A-weight

-160

-140

-120

-100

-80

-60

-40

-20

10 100 1k 10k 100k

Noise Level [dBV]

Frequency [Hz]

Fig. 26 Crosstalk vs. Frequency

Frequency [Hz]

Fig. 27 Crosstalk vs. Frequency

Frequency [Hz]

Fig. 28 Noise Level vs. Frequency

Frequency [Hz]

Fig. 29 Noise Level vs. Frequency

Supply Voltage [V]

Fig. 30 IDD vs . Supply Voltage

Supply Voltage [V]

Fig. 31 ISD vs. Supply Voltage

Frequemcy [Hz]

Fig. 32 MUTE Level vs. Frequency

Technical Note

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●Application Circuit

・Resistors RF1, RF2 should be used in 20kΩ～1MΩ range.

・For gain setting greater than 4 times, then RC1, RC2, CC1, CC2 can be eliminated.

Fig. 34 Single-ended mode application circuit

・Resistors RF1, RF2 should be used in 20kΩ～1MΩ range

Fig. 35 BTL mode application circuit

+++

Technical Note

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●Pin Configuration

No. Pin Name Function I/O equal circuit

1 IN1 Input Pin 1 A

2 SDB Shutdown Pin (OFF at L) C

3 MUTEB Mute Pin (Mute at L) C

4 BYPASS Bypass Pin D

5 IN2 Input Pin 2 A

6 VSS GND Pin -

7 OUT2 Output Pin 2 B

8 MODE Mode Select Pin (SE at VSS, BTL at VDD) A

9 OUT1 Output Pin 1 B

10 VDD Power Supply Pin -

●I/O equal circuit (Fig. 36)

A B

Fig.36 I/O equal circuit

IN1

IN2

MODE

VDD VDD

50Ω

VDDVDD

OUT1

OUT2

SDB

MUTEB

VDD

2kΩ

BYPASS

VDD

600kΩ 100kΩ

100kΩ

VDD

Technical Note

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BU7150NUV

www.rohm.com 2011.05 - Rev.C

●Functional descriptions

[Timing Chart]

BU7150NUV can control many mode states. “Active” is normal operation state for output signal. “Shutdown” is IC power

down state for low power. “Mute” is Headphone amplifier power down state for low power and fast turn-on, because

keeping BIAS voltage = VDD/2. “Turn on” and “Turn off” are sweep state.

Also, BU7150NUV has wait time for reduction of pop-sound at turn-on and turn-off. Turn-on wait time is 70msec from IN1

voltage = VDD/2. Turn-off wait time is 140msec from BYPASS voltage = 100mV. Please don't change SDB, MUTEB

condition at 70msec and 140msec wait- time.

Fig. 38 Timing Chart (MODE = VDD: BTL- mode)

Fig. 37 Timing Chart (MODE = VSS: Single-ended mode)

Technical Note

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BU7150NUV

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[About Time until Signal Output]

BU7150NUV need wait-time for BIAS charge sweep time and pop-noise reduction.

In the Fig. 37, Ts1 is BIAS charge sweep time from power on or SDB=H. Ts2 is time until signal output from power on or

SDB=H. Also, in the Fig. 38, Tb1 is BIAS charge sweep time from power on. Tb2 is time until signal output from power on.

Tb3 is BIAS charge sweep time from SDB=H. Tb4 is time until signal output from SDB=H.

These values are decided equation (1) ~ (6). However, BIAS charge sweep time (Ts1, Tb1, Tb3) have uneven ±50%, and

wait-time (70msec) is 40msec ~ 126msec for process parameter distribution. (Ta=25°C)

)1([sec]

105.2

CVDD

1Ts 6

BYPASS 　・・・　　





)2([sec]07.01Ts2Ts 　・・・　



)3([sec]

105.27

C2VDD

1Tb 6

BYPASS 　・・・　







)4([sec]07.01Tb2Tb 　・・・　

)5([sec]

105.27

CVDD

3Tb 6

BYPASS 　・・・　





)6([sec]07.03Tb4Tb 　・・・　

In the Fig. 38, Tb1 and Tb3 is differ value, because BU7150NUV’s default is single-ended mode. BU7150NUV need

BYPASS>100mV to recognize for BTL mode.

Also, Td is delay time to CI1=VDD/2 from BYPASS=VDD/2. Td is decided by CI1, RI1, and RF1.

Fig. 39 Flow of Time until Signal Output

Technical Note

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BU7150NUV

www.rohm.com 2011.05 - Rev.C

[Operation mode]

・Selecting operation mode

BU7150NUV has two OPAMP in the IC (Fig. 1). BU7150NUV is selected for BTL-mode for mono speaker and

single-ended mode for stereo headphone operation. Mode is composed of external parts and internal control (Fig. 34, 35)

BU7150NUV operates at single-ended mode when MODE pin (pin8) = 0V turn on. BTL mode is operated when MODE

pin (pin8) = VDD turn on. BYPASS voltage = 100mV then operation mode is decided by internal comparator by detecting

MODE voltage.

The difference between Single-ended mode and BTL-mode is mentioned in the following table.

Parameter Single ended mode

MODE='VSS'

BTL mode

MODE='VDD'

Mute function enable disenable

Bypass voltage turn on time [Ts1, Tb1, Tb3]

(CBYPASS=4.7μF) Ts1=2.82sec Tb1=598msec

Tb3=256msec

Time until Signal Output [Ts2, Tb2,

Tb4](CBYPASS=4.7μF) Ts2=2.89sec Tb1=668msec

Tb3=326msec

Maximum Output Power (THD=1%) 14mW 85mW

Total Harmonic Distortion + Noise 0.10% 0.20%

Power Supply Rejection Ratio 66dB 62dB

(Ta=25℃, VDD=1.5V, f=1kHz)

Technical Note

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BU7150NUV

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・Single-Ended mode

Single-ended mode can be use for stereo headphone amplifier using two internal amplifiers. BU7150NUV can select

amplifier gain Av using external parts. (Fig. 34) Two amplifiers gain Av is decided by input resistance RI1, RI2 and feedback

resistance RF1, RF2 aspect. Also, Please, use RF1, RF2 value in the range 20kΩ~1MΩ.

Amplifier outputs (OUT1, OUT2) need coupling capacitors in single-ended mode operation. Coupling capacitors reduce

DC-voltage at the output and to pass the audio signal.

Single-ended mode has mute mode. Mute mode reduces pop noise and low power (typ. 15μA when MUTEB pin = Low.

Rise time is high-speed though current consumption increases more than the state of the shutdown so that the state of

the mute may keep the output level at the bias level. Mute level is decided by input resistance RI1, RI2 and feedback

resistance RF1, RF2 and RL

Mute level [dB]

BU7150NUV needs phase-compensation circuit using external parts. (Fig. 34) But, for amplifier gain Av > 4 then phase

compensation circuit may be eliminated.

・BTL mode

BTL mode can be used for mono speaker amplifier using two internal amplifiers. BU7150NUV can select amplifier gain Av

using external parts. (Fig. 35) 1st stage gain is decided by selecting external parts. But 2nd stage gain = 1. 1st stage

output signal and 2nd stage output signal are of same amplitude but phase difference of 180°.

Amplifiers gain Av is decided by input resistance RI1 and feedback resistance RF1 aspect. Also, Please, use RF1, RF2 value

in range of 20kΩ~1MΩ.

BU7150NUV has no output pop noise at BTL mode operation, because output coupling capacitor is not charged.

Therefore, BTL mode is faster by 11 times compared to single-ended mode. SDB pin and MUTEB pin are same function

in BTL mode operation.

A

Log20 



2A 

Technical Note

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BU7150NUV

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[About Maximum Output Power]

Maximum output power of audio amplifier is reduced line impedance. Please, design to provide low impedance for the

wiring between the power source and VDD pin of BU7150NUV. Also, please design to provide low impedance for the

wiring between the GND and VSS pin of BU7150NUV.

VDD

Power source

Impedance

GND

Impedance

Speaker

Impedance

Fig. 40 Line Impedance

Technical Note

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BU7150NUV

www.rohm.com 2011.05 - Rev.C

[How to select external parts for application]

・Power supply capacitor

Power supply capacitor is important for low noise and rejection of alternating current. Please use 10μF electrolytic or

tantalum capacitor for low frequency and 0.1μF ceramic capacitor for high frequency nearer to BU7150NUV.

・BYPASS pin capacitor

BU7150NUV sweeps “Active” state after 70msec wait time after IN1 voltage = VDD/2. IN1 voltage are subordinated

BYPASS voltage Ts. BYPASS voltage is subordinated BYPASS pin capacitor CBYPASS. Therefore, High speed turn on time

is possible if CBYPASS is small value. But, pop noise may occur during turn on time. Therefore, CBYPASS need to be selected

best value for application.

Technical Note

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●Notes for use

(1) Absolute Maximum Ratings

An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,

can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If

any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical

safety measures including the use of fuses, etc.

(2) Operating conditions

These conditions represent a range within which characteristics can be provided approximately as expected. The

electrical characteristics are guaranteed under the conditions of each parameter.

(3) Reverse connection of power supply connector

The reverse connection of power supply connector can break down ICs. Take protective measures against the

breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s

power supply terminal.

(4) Power supply line

Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this

regard, for the digital block power supply and the analog block power supply, even though these power supplies has

the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus

suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the

wiring patterns. For the GND line, give consideration to design the patterns in a similar manner.

Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal.

At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the

capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus

determining the constant.

(5) GND voltage

Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.

Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric

transient.

(6) Short circuit between terminals and erroneous mounting

In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting

can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or

between the terminal and the power supply or the GND terminal, the ICs can break down.

(7) Operation in strong electromagnetic field

Be noted that using ICs in the strong electromagnetic field can malfunction them.

(8) Inspection with set PCB

On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.

Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set

PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to

the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In

addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention

to the transportation and the storage of the set PCB.

(9) Input terminals

In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the

parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of

the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input

terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not

apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power

supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the

guaranteed value of electrical characteristics.

(10) Ground wiring pattern

If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND

pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that

resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of

the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.

(11) External capacitor

In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a

degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.

(12) About the rush current

For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal

powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring,

width of GND wiring, and routing of wiring.

(13) Others

In case of use this LSI, please peruse some other detail documents, we called ,Technical note, Functional description,

Application note.

Technical Note

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BU7150NUV

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●Ordering part number

B D 7 1 5 0 N U V - E 2

Part No. Part No.

Package

NUV : VSON010V3030

Packaging and forming specification

E2: Embossed tape and reel

(Unit : mm)

VSON010V3030

3.0±0.1

1PIN MARK

1.0MAX

(0.22)

0.08

0.02+0.03

0.02

610

0.4±0.1

0.5

2.0±0.1

1.2±0.1

0.25+0.05

0.04

C0.25

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

()

Direction of feed

Reel 1pin

R1120

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The content specied herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the specications,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

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The technical information specied herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

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use of such technical information.

The Products specied in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

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Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, re or any other damage caused in the event of the

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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

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of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

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