2SK3815
No.8053-1/5
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8053A
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
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N2807 TI IM TC-00001041 / 93004QA TS IM TB-00000601
SANYO Semiconductors
DATA SHEET
2SK3815 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
•Motor drive, DC / DC converter.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID23 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 92 A
Allowable Power Dissipation PD1.65 W
Tc=25°C40W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 EAS 19.8 mJ
Avalanche Current *2 IAV 23 A
Note : *1 VDD=20V, L=50µH, IAV=23A
*2 L≤50µH, single pulse
Marking : K3815
2SK3815
No.8053-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=12A 9 15 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=12A, VGS=10V 42 55 mΩ
RDS(on)2 ID=12A, VGS=4V 60 85 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 775 pF
Output Capacitance Coss VDS=20V, f=1MHz 125 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 105 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise T ime trSee specified Test Circuit. 85 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 72 ns
Fall T ime tfSee specified Test Circuit. 78 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=23A 19 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=23A 2.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=23A 4.1 nC
Diode Forward Voltage VSD IS=23A, VGS=0V 1.04 1.5 V
Package Dimensions Package Dimensions
unit : mm (typ) unit : mm (typ)
7513-002 7001-003
Switching Time Test Circuit Unclamped Inductive Test Circuit
10.2
8.8
11.0
2.7
11.5
(9.4)
20.9
1.6 0.2
1.3
4.5
0.8 0.4
123
2.55
2.55
1.2
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
PW=10µs
D.C.
≤
1%
P.G 50Ω
G
S
D
ID=12A
RL=2.5Ω
VDD=30V
VOUT
2SK3815
VIN
10V
0V
VIN
50Ω
≥50Ω
RG DUT
VDD
L
15V
0V
10.2
8.8
1.5MAX
2.7
9.9
3.0
0.2
1.3
4.5
0.8
1.35
0.4
1.4
1.2
2.55
2.55
0 to 0.3
123
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
2SK3815
No.8053-3/5
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
⏐yfs⏐ -- IDIS -- VSD
Ciss, Coss, Crss -- VDS
SW Time -- ID
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Drain Current, ID -- A
Forward T ransfer Admittance, ⏐
y
fs⏐ -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
IT07802 IT07803
IT07800 IT07801
0.5 1.0 1.5 2.0 2.5 4.03.53.00
0
5
10
15
30
25
20
0
5
10
15
30
25
20
--50 --25 150
03010 15 20 255
100
1000
IT07807
IT07805
IT07804
0.1 1.0
23 57
3
10
1.0
1.51.20.3 0.6 0.90
0.01
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
2
100
5
7
3
2
7
7
5
5
3
2
3
5
2
3
2
3
2
10
23 57 23
3456789210
0
100
140
120
40
60
80
20
0
100
140
120
40
60
80
20
1234065
0 25 50 75 100 125
7
5
3
7
5
4V
VGS=3V
6V
8V
10V
Tc=25°C
25°
C
--25
°C
25°
C
Tc= --25°C
75
°C
Tc=75
°
C
VDS=10V
ID=12A
Tc=75
°C
25°C
--25°C
VGS=4V, ID=12A
VGS=10V, ID=12A
Tc= --25°C
75
°C
25°C
VDS=10V
Tc=
75
°
C
25
°
C
--
25°C
VGS=0V
f=1MHz
Coss
Ciss
Crss
IT07806
0.1 23 1.0
57 2 3 57 2 3 57
10
10
100
1000
3
5
7
2
3
5
7
2
3
5
7
td(off)
tf
td(on)
tr
VDD=30V
VGS=10V
Case Temperature, Tc -- °C
2SK3815
No.8053-4/5
IT07809
0.1
1.0
10
100
3
2
5
7
3
2
5
7
2
3
2
5
7
23 57 23 5 577
1.00.1 10 100
23
IDP=92A
ID=23A
100µs
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
IT07808
0 5 10 2015
0
2
4
6
8
9
1
3
5
7
10
VDS=30V
ID=23A
A S O
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT07810
0
020 40 60 80 100 120
45
35
40
140 160
30
20
25
15
5
10
PD -- Tc
Allowable Power Dissipation, PD -- W
Case Tamperature, Tc -- °C
IT07811
0
020 40 60 80 100 120
1.65
140 160
2.0
1.5
1.0
0.5
PD -- Ta
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
10µs
Tc=25°C
Single pulse
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
PW≤10µs
2SK3815
No.8053-5/5
PS
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of November, 2007. Specifications and information herein are subject
to change without notice.
