TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Product Overview The Qorvo TGF2929-FL is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant. Evaluation boards are available upon request. Key Features Functional Block Diagram * * * * * * * Frequency: DC to 3.5 GHz Output Power (P3dB)1: 107 W Linear Gain1: 17 dB Typical DEff3dB1: 60.8% Operating Voltage: 28 V Low thermal resistance package Pulse capable Note 1: @ 3.5 GHz Applications * * * * * * Datasheet Rev. B, August 24, 2018 | Subject to change without notice Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Part No. Description TGF2929-FL TGF2929-FLEVB01 DC -3.5 GHz RF Power Transistor 3.1 - 3.5 GHz Evaluation Board - 0 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Recommended Operating Conditions1 Absolute Maximum Ratings1 Parameter Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current Gate Current Range, IG Power Dissipation, 20% DC 500 uS PW, PDISS, T = 85C RF Input Power, CW, T = 25 C Mounting Temperature (30 Seconds) Storage Temperature Rating Units +145 -7 to +2 12 See page 4. V V A mA 144 W +39.8 dBm 320 C -65 to +150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Parameter Min Typ Max Units Operating Temp. Range Drain Voltage Range, VD Drain Bias Current, IDQ Peak Drain Current, ID3 Gate Voltage, VG4 Power Dissipation, CW (PD)2 Power Dissipation, Pulsed (PD)2, 3 -40 +12 - - - - +25 +28 260 7.2 -2.7 - +85 +50 - - - 82 C V mA A V W - - 140 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. Pulse Width = 100 uS, Duty Cycle = 20% 4. To be adjusted to desired IDQ Pulsed Characterization - Load-Pull Performance - Power Tuned1 Parameters Frequency, F Linear Gain, GLIN Output Power at 3dB compression point, P3dB Drain Efficiency at 3dB compression point, DEff3dB Gain at 3dB compression point Typical Values Unit 1.0 21.2 2.0 16.7 3.0 15.6 3.5 15.8 GHz dB 100 132 120 107 W 61.0 60.4 57.6 54.4 % 18.2 13.7 12.6 12.8 dB Notes: 1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 260 mA, Temp = +25 C Pulsed Characterization - Load-Pull Performance - Efficiency Tuned1 Parameters Frequency, F Linear Gain, GLIN Output Power at 3dB compression point, P3dB Drain Efficiency at 3dB compression point, DEff3dB Gain at 3dB compression point, G3dB Typical Values Unit 1.0 22.3 2.0 17.2 3.0 16.9 3.5 17.0 GHz dB 47.8 50.1 49.8 48.9 W 76.6 66.9 68.3 60.8 % 19.3 14.2 13.9 14.0 dB Notes: 1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 260 mA, Temp = +25 C Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 1 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor RF Characterization - 3.1 - 3.5 GHz EVB Performance At 3.3 GHz1 Parameter Linear Gain, GLIN Output Power at 3dB compression point, P3dB Power-Added Efficiency at 3dB compression point, PAE3dB Gain at 3dB compression point, G3dB Min Typ Max Units - - 15.0 106 - - dB W - 51.3 - % - 12.0 - dB Notes: 1. VD = +28 V, IDQ = 260 mA, Temp = +25 C, 100 S, 20% RF Characterization - Mismatch Ruggedness at 3.5 GHz1 Symbol Parameter VSWR Impedance Mismatch Ruggedness dB Compression Typical 3 10:1 Notes: 1. Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC 2. Driving input power is determined at pulsed compression under matched condition at EVB output connector. Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 2 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Maximum Gate Current Maximum Gate Current Vs. IR Surface Temperature 250 Maximum Gate Current [mA] 230 210 190 170 150 130 110 90 70 50 30 120 130 140 150 160 170 180 190 200 210 220 230 IR Surface Channel Temperature [C] Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 3 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Thermal and Reliability Information - Pulsed 200.0 Peak IR Surface Temperature Package base fixed at 85C, Pdiss = 100 W Peak IR Surface Temperature (C) 190.0 180.0 170.0 160.0 150.0 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle 140.0 130.0 120.0 110.0 100.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (sec) Parameter 1 Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) 1Refer Conditions Values 85 C back side temperature 100 W Pdiss, 1 mS PW, 5% DC 85 C back side temperature 100 W Pdiss, 1 mS PW, 10% DC 85 C back side temperature 100 W Pdiss, 1 mS PW, 20% DC 85 C back side temperature 100 W Pdiss, 1 mS PW, 25% DC Units 0.73 158 0.75 160 0.78 163 0.88 173 C/W C C/W C C/W C C/W C to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 4 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Thermal and Reliability Information - CW Peak IR SurfaceTemperature vs. CW Power Package base fixed at 85C 240 Peak IR Surface Temperature, C 220 200 180 160 140 120 100 80 0 10 20 30 40 50 60 70 80 90 100 110 120 CW Power Dissipation, W Parameter1 Conditions Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) Thermal Resistance, IR (JC) Peak IR Surface Temperature (TCH) 85 C back side temperature 28.8 W Pdiss 85 C back side temperature 57.6 W Pdiss 85 C back side temperature 86.4 W Pdiss 85 C back side temperature 115 W Pdiss 1Refer Values 1.08 116 1.15 151 1.20 189 1.28 232 Units C/W C C/W C C/W C C/W C to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 5 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Load-Pull Smith Charts1, 2 Notes: 1. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 15 for load-pull and source-pull reference planes. 11.7- load-pull TRL fixtures are built with 20-mil RO4350B material. 1GHz, Load-pull * Max Power is 50dBm at Z = 2.241+0.492i = -0.6764+0.0592i * Max Gain is 20.4dB at Z = 1.648+2.661i = -0.6861+0.3361i * Max DEff is 76.6% at Z = 2.391+3.013i = -0.588+0.3395i 0.6 Zs(1fo) = 1.45-0.27i Zs(2fo) = 6.54+24.95i Zs(3fo) = 3.67-16.91i 0.5 0. 4 0.3 19.9 75.4 18.9 17.9 60.4 49.7 49.2 2 1.8 1.6 1.4 1.2 1 0.9 0.8 48.7 Zo = 11.7 3dB Compression Referenced to Peak Gain Datasheet Rev. B, August 24, 2018 | Subject to change without notice 0.7 0.6 0.5 65.4 0.4 0.3 0.2 0.1 70.4 - 6 of 20 - Power Gain DEFF www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Load-Pull Smith Charts1, 2 Notes: 1. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 15 for load-pull and source-pull reference planes. 11.7- load-pull TRL fixtures are built with 20-mil RO4350B material. 2GHz, Load-pull 1.4 1.2 * Max Power is 51.2dBm at Z = 2.555-1.967i = -0.6108-0.2223i * Max Gain is 15.1dB at Z = 3.421+0.937i = -0.5416+0.0955i * Max DEff is 66.9% at Z = 1.679-0.781i = -0.7431-0.1018i 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Zs(1fo) = 1.33-4.22i Zs(2fo) = 1.06+1.79i Zs(3fo) = 2.31+1.72i 14.4 65.3 60.3 55.3 13.4 51 12.4 50.5 50 3 -0. .4 -0 Zo = 11.7 3dB Compression Referenced to Peak Gain Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 7 of 20 - Power Gain DEFF www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Load-Pull Smith Charts1, 2 Notes: 1. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 15 for load-pull and source-pull reference planes. 11.7- load-pull TRL fixtures are built with 20-mil RO4350B material. 3GHz, Load-pull 64.8 13.7 1.2 1 * Max Power is 50.8dBm at Z = 2.794-4.043i = -0.4979-0.4178i * Max Gain is 14.4dB at Z = 1.705-1.63i = -0.7202-0.2092i * Max DEff is 68.3% at Z = 1.752-2.538i = -0.6797-0.317i 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Zs(1fo) = 5.16-8.3i Zs(2fo) = 3.73-4.83i Zs(3fo) = 37.97-7.46i 54.8 59.8 12.7 11.7 50.5 50 49.5 3 -0. .4 -0 Zo = 11.7 3dB Compression Referenced to Peak Gain Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 8 of 20 - Power Gain DEFF www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Load-Pull Smith Charts1, 2 Notes: 3. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 4. See page 15 for load-pull and source-pull reference planes. 11.7- load-pull TRL fixtures are built with 20-mil RO4350B material. 54.4 1 0.9 * Max Power is 50.3dBm at Z = 2.992-5.16i = -0.4178-0.4979i * Max Gain is 14dB at Z = 1.839-3.661i = -0.6106-0.4355i * Max DEff is 60.8% at Z = 1.839-3.661i = -0.6106-0.4355i 0.8 0.7 0.6 0.5 0.3 0.2 0.1 Zs(1fo) = 13-0.58i Zs(2fo) = 7.62+3.24i Zs(3fo) = 41.24+12.78i 0.4 3.5GHz, Load-pull 49.4 59.4 13.9 50.3 3 -0. 49.8 49.3 12.9 11.9 -0. 5 .4 -0 Zo = 11.7 3dB Compression Referenced to Peak Gain Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 9 of 20 - Power Gain DEFF www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Typical Performance - Load-Pull Drive-up1, 2 Notes: 1. 100 S PW, 20% DC pulsed signal, VD = 28 V, IDQ = 260 mA 2. See page 15 for load-pull and source-pull reference planes where the performance was measured. Gain and DEFF vs. Output Power 2 GHz - Power Tuned 65 20 65 24 60 19 60 23 55 18 55 22 50 17 45 16 40 19 35 18 17 16 Zs(1fo) = 1.45-0.27i Zs(2fo) = 6.54+24.95i Zs(3fo) = 3.67-16.91i Zl(1fo) = 2.24+0.49i Zl(2fo) = 47.03+37.94i Zl(3fo) = 1.99-6.75i 15 44 45 46 47 48 Output Power [dBm] 49 14 30 13 25 12 20 11 15 51 50 15 10 39 50 18 17 16 Gain 45 PAE 40 15 35 14 30 13 18 Gain [dB] 17 Gain [dB] 19 PAE [%] 20 55 Zs(1fo) = 5.16-8.3i Zs(2fo) = 3.73-4.83i Zs(3fo) = 37.97-7.46i Zl(1fo) = 2.79-4.04i Zl(2fo) = 3.92+1.95i Zl(3fo) = 38.23-1.75i 35 30 25 40 41 42 43 44 45 46 47 48 Output Power [dBm] 49 50 20 51 15 52 Gain and DEFF vs. Output Power 3.5 GHz - Power Tuned 60 19 40 Gain PAE Gain and DEFF vs. Output Power 3 GHz - Power Tuned 20 45 60 Zs(1fo) = 13-0.58i Zs(2fo) = 7.62+3.24i Zs(3fo) = 41.24+12.78i Zl(1fo) = 2.99-5.16i Zl(2fo) = 2.37+2.69i Zl(3fo) = 18.6+27i 55 50 Gain PAE 16 45 40 15 35 14 30 25 13 25 12 20 12 20 11 15 11 15 10 40 41 42 43 44 45 46 47 Output Power [dBm] 48 49 Datasheet Rev. B, August 24, 2018 | Subject to change without notice 50 PAE [%] 20 50 Zs(1fo) = 1.33-4.22i Zs(2fo) = 1.06+1.79i Zs(3fo) = 2.31+1.72i Zl(1fo) = 2.56-1.97i Zl(2fo) = 3.12+9.97i Zl(3fo) = 25.25-6.15i 10 51 - 10 of 20 - 10 38 39 40 41 42 43 44 45 46 47 Output Power [dBm] 48 49 50 PAE [%] Gain PAE 21 Gain [dB] 25 PAE [%] Gain [dB] Gain and DEFF vs. Output Power 1 GHz - Power Tuned 10 51 www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Typical Performance - Load-Pull Drive-up1, 2 Notes: 1. 100 S PW, 20% DC pulsed signal, VD = 28 V, IDQ = 260 mA 2. See page 15 for load-pull and source-pull reference planes where the performance was measured. Gain and DEFF vs. Output Power 2 GHz - Efficiency Tuned Gain and DEFF vs. Output Power 1 GHz - Efficiency Tuned 65 18 60 22 75 17 21 70 16 20 65 19 60 17 16 Zs(1fo) = 1.45-0.27i Zs(2fo) = 6.54+24.95i Zs(3fo) = 3.67-16.91i Zl(1fo) = 2.39+3.01i Zl(2fo) = 9.84-27.64i Zl(3fo) = 1.46-0.13i 15 46 46.5 47 Output Power [dBm] 13 50 12 45 11 10 40 45 40 35 Gain PAE 41 42 Gain and DEFF vs. Output Power 3 GHz - Efficiency Tuned 43 44 45 46 47 Output Power [dBm] 48 49 50 30 25 20 51 Gain and DEFF vs. Output Power 3.5 GHz - Efficiency Tuned 75 20 70 19 70 19 65 18 65 18 60 17 60 17 55 16 16 15 14 Zs(1fo) = 5.16-8.3i Zs(2fo) = 3.73-4.83i Zs(3fo) = 37.97-7.46i Zl(1fo) = 1.75-2.54i Zl(2fo) = 3.2+3.58i Zl(3fo) = 39.92-5.08i 50 45 13 Gain PAE 12 11 10 41 42 43 44 45 46 47 Output Power [dBm] 48 49 Datasheet Rev. B, August 24, 2018 | Subject to change without notice Gain [dB] 20 PAE [%] Gain [dB] 50 PAE [%] 14 55 40 48 47.5 15 55 Zs(1fo) = 1.33-4.22i Zs(2fo) = 1.06+1.79i Zs(3fo) = 2.31+1.72i Zl(1fo) = 1.68-0.78i Zl(2fo) = 2.98+13.06i Zl(3fo) = 17.09-11.75i 15 14 40 13 35 12 30 11 25 50 - 11 of 20 - 10 39 55 Zs(1fo) = 13-0.58i Zs(2fo) = 7.62+3.24i Zs(3fo) = 41.24+12.78i Zl(1fo) = 1.84-3.66i Zl(2fo) = 1.94+3.22i Zl(3fo) = 15.04+32i 50 45 40 Gain PAE PAE [%] Gain [dB] 18 Gain [dB] 70 19 24 PAE [%] 20 23 90 Gain 85 PAE 80 25 35 30 25 40 41 42 43 44 45 46 Output Power [dBm] 47 48 20 49 www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Power Drive-up Performance Over Temperatures Of 3.1 - 3.5 GHz EVB1 Notes: 1. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC P3dB vs. Frequency vs. Temperature 150 140 130 G3dB [dB] P3dB [W] 120 110 100 -40C -20C 0C 25C 45C 65C 85C 90 80 70 60 50 3.1 3.2 3.3 3.4 G3dB vs. Frequency vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 3.5 -40C -20C 0C 25C 45C 65C 85C 3.1 3.2 Frequency [GHz] 3.4 3.5 PAE3dB vs. Frequency vs. Temperature 100 -40C -20C 0C 25C 45C 65C 85C 90 80 70 PAE3dB [%] 3.3 Frequency [GHz] 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 12 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Power Drive-up Performance At 25 C Of 3.1 - 3.5 GHz EVB1 Notes: 1. VD = 28 V, IDQ = 260 mA, 100 S PW, 20% DC 100 140 18.5 90 130 17.0 80 120 15.5 70 110 14.0 P3dB 100 12.5 G3dB 90 11.0 PAE [%] 20.0 G3dB [dB] P3dB [W] PAE vs. Frequency at 25C P3dB and G3dB vs. Frequency @ 25C 150 60 50 40 80 9.5 30 70 8.0 20 60 6.5 10 5.0 0 50 3.1 3.2 3.3 3.4 3.1 3.5 3.3 3.4 3.5 Frequency [GHz] Frequency [GHz] Datasheet Rev. B, August 24, 2018 | Subject to change without notice 3.2 - 13 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Pin Configuration and Description, and Package Marking1 Reference Planes Notes: 1. The TGF2929-FL will be marked with the "TGF2929-FL" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, the "MXXX" is the production lot number, and the "ZZZ" is an auto-generated serial number represents the last three digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, the "MXXX" is the production lot number. Pin Description Pin Symbol Description 1 VD / RF OUT Drain voltage / RF Output 2 VG / RF IN Gate voltage / RF Input 3 Base Source connected to ground Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 14 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Package Dimensions1, 2, 3, 4 Notes: 1. Unless otherwise noted, the tolerance is 0.005 inch. 2. Package metal base and leads are gold plated. 3. Part is epoxy sealed. 4. Part meets Industry NI360 footprint. Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 15 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Schematic - 3.1 - 3.5 GHz EVB DC_V ID=Vg DC_V ID=Vd CAP ID=C7 CAP ID=C4 CAP ID=C6 RES ID=R2 CAP ID=C5 IND ID=L1 PORT P=1 Z=50 Ohm IND ID=L2 CAP ID=C8 RES ID=R1 2 1 CAP ID=C2 CAP ID=C1 Bias-up Procedure 1. Set VG to -4 V. 2. Set ID current limit to 300 mA. 3. Apply 28 V VD. 4. Slowly adjust VG until ID is set to 260 mA. 5. Set ID current limit to 2 A 6. Apply RF. Datasheet Rev. B, August 24, 2018 | Subject to change without notice FET PORT P=2 Z=50 Ohm 3 CAP ID=C3 Bias-down Procedure 1. Turn off RF signal. 2. Turn off VD 3. Wait 2 seconds to allow drain capacitor to discharge 4. Turn off VG - 16 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor 3.1 - 3.5 GHz EVB1 C7 11 C6 C4 C5 L2 R2 L1 R1 C2 C3 C1 C8 Notes: 1. PCB Material: RO4350B, 20 mil thickness, 1 oz copper cladding Bill Of material - 3.1 - 3.5 GHz EVB Ref Des Value Qty Manufacturer Part Number R1 C1, C2 C3 L1 R2 C4 L2 C5 C6 C7 C8 100 5.6 pF 1.0 pF 22 nH 10 10 uF 12 nH 2400 pF 1000 pF 220 uF 15 pF 1 2 1 1 1 1 1 1 1 1 1 Vishay/Dale ATC ATC Coilcraft Vishay/Dale Murata Coilcraft Murata ATC United Chemi-Con ATC CRCW0603100RJNEA 600S5R6BT 600S1R0BT 0805CS-220X-LB CRCW060310R0JNEA C1632X5R0J106M130AC A04T_L C08BL242X-5UN-X0T 800B102JT50XT EMVY500ADA221MJA0G 600S150JT250XT Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 17 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Recommended Solder Temperature Profile Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 18 of 20 - www.qorvo.com TGF2929-FL 100W, 28V, DC-3.5 GHz, GaN RF Power Transistor Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) Class 1A 650 V ANSI/ESD/JEDEC JS-001 ESD - Charged Device Model (CDM) Class C3 1000 V ANSI/ESD/JEDEC JS-002 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C max. reflow temp.) and tin/lead (245C max. reflow temp.) soldering processes. Solder profiles available upon request. Package lead plating is NiAu. Au thickness is 60 microinches. RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: Email: customer.support@qorvo.com For technical questions and application information: +1.844.890.8163 Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. 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Copyright 2016 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. B, August 24, 2018 | Subject to change without notice - 19 of 20 - www.qorvo.com