VRRM = IF = 5200 V 80 A Diode-Die 5SLX 12M5200 PRELIMINARY Die size: 14.3 x 14.3 mm Doc. No. 5SYA1657-01 Sep 05 * Low on-state voltage * Soft reverse-recovery * Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 5200 V IF 80 A 160 A -40 125 C typ max Unit Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 80 A Continuous reverse current IR VR = 5200 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 80 A, VR = 2800 V, di/dt = 350 A/s, L = 3000 nH, Inductive load, Switch: 2x 5SMX12N4506 min Tvj = 25 C 2.5 V Tvj = 125 C 2.7 V Tvj = 25 C 2 A Tvj = 125 C 7 mA Tvj = 25 C 98 A Tvj = 125 C 125 A Tvj = 25 C 110 C Tvj = 125 C 175 C Tvj = 25 C 840 ns Tvj = 125 C 1330 ns Tvj = 25 C 235 mJ Tvj = 125 C 384 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12M5200 160 400 140 350 25 C 300 125 C 100 IF [A] Erec [mJ], Qrr [C], Irr [A] 120 80 60 250 150 40 100 20 50 0 Erec 200 Irr VR = 2800 V di/dt = 350 A/s Tvj = 125 C L = 3 H Qrr 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 20 VF [V] Fig. 1 -400 350 -800 300 -1200 IR -1600 -80 -2000 -120 -2400 100 -2800 50 -3200 0 -200 2 3 4 5 80 90 Erec 200 Qrr 150 6 7 8 9 Typical diode reverse recovery behaviour Irr 0 time [s] Fig. 3 70 VR = 2800 V IF = 80 A Tvj = 125 C L = 3 H VR -160 1 60 Typical reverse recovery characteristics vs. forward current 250 -40 0 50 400 0 VR = 2800 V IF = 80 A di/dt = 350 A/s Tvj = 125 C L = 3 H 0 IF [A] Fig. 2 Erec [mJ], Qrr [C], Irr [A] 120 40 40 IF [A] Typical diode forward characteristics 80 30 100 200 300 400 di/dt [A/s] Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1657-01 Sep 05 page 2 of 3 5SLX 12M5200 Mechanical properties Parameter Unit Dimensions Metallization 3) 3) Overall die L x W 14.3 x 14.3 mm exposed LxW front metal 9.0 x 9.0 mm thickness 560 15 m 4+8 m 1.8 + 1.2 m front (A) AlSi1 / Al back (K) AlSi1 + TiNiAg For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing Anode Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1657-01 Sep 05