SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Operating temperature from -55C to 125C Supply voltage of 1.8V or 2.5V to 3.3V Excellent total frequency stability as low as 20 ppm Low power consumption of 3.4 mA typical at 1.8V LVCMOS/LVTTL compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Ruggedized equipment in harsh operating environment Electrical Specifications Table 1. Electrical Characteristics[1,2] Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 - 110 MHz F_stab -20 - +20 ppm -25 - +25 ppm -30 - +30 ppm -50 - +50 ppm Refer to Table 13 for the exact list of supported frequencies list of supported frequencies Frequency Stability and Aging Frequency Stability Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load (15 pF 10%). Operating Temperature Range Operating Temperature Range T_use -55 - +125 C Supply Voltage and Current Consumption Supply Voltage Current Consumption OE Disable Current Standby Current Vdd Idd I_od I_std 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 - 3.63 V - 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V - 3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V - 3.4 4 mA No load condition, f = 20 MHz, Vdd = 1.8V - - 4.1 mA Vdd = 2.5V to 3.3V, OE = Low, output in high Z state. - - 3.8 mA Vdd = 1.8V, OE = Low, output in high Z state. - 2.6 8.5 A Vdd = 2.8V to 3.3V, ST = Low, Output is Weakly Pulled Down - 1.4 5.5 A Vdd = 2.5V, ST = Low, Output is Weakly Pulled Down 0.6 3.5 A Vdd = 1.8V, ST = Low, Output is Weakly Pulled Down - LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 - 55 % All Vdds Tr, Tf - 1.0 2.0 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% - 1.3 2.5 ns Vdd =1.8V, 20% - 80% - 1.0 3 ns Vdd = 2.25V - 3.63V, 20% - 80% Output High Voltage VOH 90% - - Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V or 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL - - 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V or 2.5V) IOL = 2 mA (Vdd = 1.8V) SiTime Corporation Rev. 1.0 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised December 18, 2013 SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Table 1. Electrical Characteristics[1,2] (continued) Parameters Symbol Min. Typ. Max. Unit Condition Input Characteristics Input High Voltage VIH 70% - - Vdd Pin 1, OE or ST Input Low Voltage VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high 2 - - M Pin 1, ST logic low Startup and Resume Timing Startup Time T_start - - 5 ms Measured from the time Vdd reaches 90% of final value T_oe - - 130 ns T_resume - - 5 ms f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * clock periods Measured from the time ST pin crosses 50% threshold Enable/Disable Time Resume Time Jitter RMS Period Jitter T_jitt Peak-to-peak Period Jitter T_pk RMS Phase Jitter (random) T_phj - 1.6 2.5 ps f = 75MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 1.9 3 ps f = 75MHz, Vdd = 1.8V - 12 20 ps f = 75MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 14 25 ps f = 75MHz,Vdd = 1.8V - 0.5 0.8 ps f = 75MHz, Integration bandwidth = 900 kHz to 7.5 MHz - 1.3 2 ps f = 75MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristic table is specified for the nominal value of the highest voltage option for that parameter and at 25 C temperature. Table 2. Pin Description Pin 1 Symbol OE/ ST/NC Top View Functionality Output Enable H[3]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H[3]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. No Connect Any voltage between 0 and Vdd or Open[3]: Specified frequency output. Pin 1 has no function. Electrical ground[4] 2 GND Power 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] OE/ST/NC 1 4 VDD GND 2 3 OUT Figure 1. Pin Assignments Notes: 3. In OE or ST mode, a pull-up resistor of 10kohm or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 F or higher between Vdd and GND is required. Rev. 1.0 Page 2 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice N Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C Vdd -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature[5] - 150 C Note: 5. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[6] JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 (C/W) Package (C/W) (C/W) Note: 6. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[7] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 125C 135C Note: 7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 1.0 Page 3 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Test Circuit and Waveform[8] Vdd Vout 0.1F tr 3 4 Power Supply Test Point 1 tf 80% Vdd 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1k OE/ST Function Figure 3. Waveform Figure 2. Test Circuit Note: 8. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd Pin 4 Voltage T_start [9] ST Voltage No Glitch during start up T_resume CLK Output CLK Output T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only) u Vdd Vdd 50% Vdd OE Voltage OE Voltage 50% Vdd T_oe T_oe CLK Output CLK Output HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Note: 9. SiT8920 has "no runt" pulses and "no glitch" output during startup or resume. Rev. 1.0 Page 4 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 1.8 V 2.5 V 2.8 V 3V DUT 1 DUT 2 DUT 3 DUT 4 DUT 5 DUT 6 DUT 7 DUT 8 DUT 9 DUT 10 25 3.3 V 20 6.0 15 Frequency (ppm) Idd (mA) 5.5 5.0 4.5 4.0 10 ) m 5 p p ( y 0 c n e u q re 5 F 10 15 3.5 20 3.0 0 20 40 60 80 100 25 55 Frequency (MHz) 2.5 V 2.8 V 15 5 25 45 65 85 105 125 Tem per atur e(C) ( C) Temperature Figure 8. Idd vs Frequency 1.8 V 35 3.0 V Figure 9. Frequency vs Temperature 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 53 3.0 Duty cycle (%) RMS period jitter (ps) 54 3.5 2.5 2.0 1.5 1.0 52 51 50 49 48 47 0.5 46 0.0 0 20 40 60 80 45 100 0 20 40 Frequency (MHz) Figure 10. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 2.5 2.5 2.0 2.0 1.5 1.0 100 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) Figure 12. 20%-80% Rise Time vs Temperature Rev. 1.0 80 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 60 Frequency (MHz) Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1 0.9 0.8 IPJ (ps) IPJ (ps) 1.8 V 2 1.9 1.8 1.7 )s 1.6 (p1.5 J P I 1.4 1.3 1.2 1.1 1 )s 0.7 (p J P I 0.6 0.5 0.4 0.3 10 30 50 70 90 110 10 Frequency (MHz) Frequency (MHz) 30 50 70 90 110 Frequency (MHz) Frequency (MHz) Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[11] Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 7.5 MHz) vs Frequency[11] Notes: 10. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is 12 kHz to 5 MHz for carrier frequencies up to 40 MHz. Rev. 1.0 Page 6 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Programmable Drive Strength The SiT8920 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: * Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time * Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. * Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section; http://www.sitime.com/support/application-notes. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 0 Harmonic amplitude (dB) SiT8920 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8920 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: trise=0.1 trise=0.15 trise=0.2 10 M a x F re q u e n c y = trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 -10 -20 1 5 x T rf_ 2 0 /8 0 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -30 -40 Example 1 -50 -60 Calculate fMAX for the following condition: -70 -80 The SiT8920 can support up to 60 pF or higher in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time 1 3 5 7 9 11 Harm onic num ber Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. * Vdd = 1.8V (Table 7) * Capacitive Load: 30 pF * Desired Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT8920AIE12-18E-66.666660 Drive strength code is inserted here. Default setting is "-" High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8920 device with default drive strength setting, the typical rise/fall time is 1ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83ns by then increasing the drive strength setting on the SiT8920. Rev. 1.0 Page 7 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "": default U F 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T 3.77 1.94 1.29 0.97 0.55 7.54 3.90 2.57 2.00 1.12 12.28 7.03 4.72 3.54 2.08 19.57 10.24 7.01 5.43 3.22 25.27 13.34 9.06 6.93 4.08 E or "": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 L A R B T or "": default E U F 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 T or "": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev. 1.0 Page 8 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Pin 1 Configuration Options (OE, ST, or NC) Pin 1 of the SiT8920 can be factory-programmed to support three modes: Output enable (OE), standby (ST) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1s. Standby (ST) Mode In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few A. When ST is pulled High, the device goes through the "resume" process, which can take up to 5 ms. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and output the specified frequency regardless of the logic level on pin 1. Table 12 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode. Table 12. OE vs. ST vs. NC Active current 20 MHz (max, 1.8V) OE disable current (max. 1.8V) OE ST NC 4 mA 4 mA 4 mA 3.8 mA N/A N/A N/A 0.6 uA N/A 130 ns N/A N/A N/A 5 ms N/A High Z weak pull-down N/A Standby current (typical 1.8V) OE enable time at 110 MHz (max) Resume time from standby (max, all frequency) Output driver in OE disable/standby mode Output on Startup and Resume The SiT8920 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. Figure 18. Startup Waveform vs. Vdd (Zoomed-in View of Figure 17) Instant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT8920 high temperature oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT8920 package sizes and can be configured to one's exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. Customizable Features of the SiT8920 FP Devices Include * Frequencies between 1 - 110 MHz * Four frequency stability options, 20 PPM, 25 PPM, 30 PPM, 50 PPM * Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and 2.25 to 3.63V continuous * Output drive strength For more information regarding SiTime's field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. SiT8920 is factory-programmed per customer ordering codes for volume delivery. In addition, the SiT8920 has NO RUNT, NO GLITCH output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. Figure 17. Startup Waveform vs. Vdd Rev. 1.0 Page 9 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm)[13] Recommended Land Pattern (Unit: mm)[14] 2.0 x 1.6 x 0.75 mm 0.65 2.00.05 #3 #1 0.48 1.2 0.750.05 YXXXX #2 1.5 #4 0.93 1.60.05 #3 #2 #1 0.8 #4 0.68 0.9 2.5 x 2.0 x 0.75 mm 1.9 2.2 2.5 0.05 #3 1.5 1.9 #2 #2 1.0 1.2 0.5 YXXXX #1 #4 1.1 #3 2.0 0.05 #4 1.00 #1 0.75 0.05 0.75 1.4 1.1 3.2 x 2.5 x 0.75 mm 3.2 0.05 #3 #4 0.7 1.9 0.9 #2 #1 0.9 0.75 0.05 #2 1.2 YXXXX #1 2.2 2.1 #3 2.5 0.05 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 Rev. 1.0 #2 #4 #2 #1 2.2 1.1 1.6 #1 0.75 0.05 YXXXX #3 0.8 #3 3.2 0.05 #4 2.39 1.15 1.5 Page 10 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice 0 Dimensions and Patterns Package Size - Dimensions (Unit: mm)[13] Recommended Land Pattern (Unit: mm)[14] 7.0 x 5.0 x 0.90 mm 5.08 3.81 2.6 5.08 0.90 0.10 2.0 1.1 YXXXX 5.0 0.05 7.0 0.05 1.4 2.2 Notes: 13. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 14. A capacitor of value 0.1 F or higher between Vdd and GND is required. Rev. 1.0 Page 11 of 13 www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT8920AM -12-18E -25.000625D Packing Method "T": 12 mm Tape & Reel, 3ku reel "Y": 12 mm Tape & Reel, 1ku reel "D": 8 mm Tape & Reel, 3ku reel "E": 8 mm Tape & Reel, 1ku reel Blank for Bulk Part Family "SiT8920" Revision Letter "A" is the revision Frequency Refer to the Supported Frequency Table below Temperature Range "M" -55C to 125C Feature Pin "E" for Output Enable "S" for Standby "N" for No Connect Output Drive Strength "-" Default (datasheet limits) See Tables 7 to 11 for rise/fall times "L" "A" "R" "B" Supply Voltage "18" for 1.8V 10% "25" for 2.5V 10% "28" for 2.8V 10% "30" for 3.0V 10% "33" for 3.3V 10% "XX" for 2.25V to 3.63V "T" "E" "U" "F" Package Size "7" 2.0 x 1.6 mm "1" 2.5 x 2.0 mm "2" 3.2 x 2.5 mm "3" 5.0 x 3.2 mm "8" 7.0 x 5.0 mm Frequency Stability "1" for 20 ppm "2" for 25 ppm "8" for 30 ppm "3" for 50 ppm Table 13. List of Supported Frequencies[15, 16] Frequency Range (-55 to +125C) Min. Max. 1.000000 MHz 61.222999 MHz 61.674001 MHz 69.239999 MHz 70.827001 MHz 78.714999 MHz 79.561001 MHz 80.159999 MHz 80.174001 MHz 80.779999 MHz 82.632001 MHz 91.833999 MHz 95.474001 MHz 96.191999 MHz 96.209001 MHz 96.935999 MHz 99.158001 MHz 110.000000 MHz Notes: 15. Any frequency within the min and max values in the above table are supported with 6 decimal places of accuracy. 16. Please contact SiTime for frequencies that are not listed in the tables above. Table 14. Ordering Codes for Supported Tape & Reel Packing Method Device Size (mm x mm) 12 mm T&R (3ku) 12 mm T&R (1ku) 8 mm T&R (3ku) 2.0 x 1.6 - - D E 2.5 x 2.0 - - D E 3.2 x 2.5 - - D E 5.0 x 3.2 T Y - - 7.0 x 5.0 T Y - - Rev. 1.0 Page 12 of 13 8 mm T&R (1ku) www.sitime.com SiT8920 -55C to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Table 15. Additional Information Document Description Download Link Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/85-manu facturing-notes-for-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes Revision History Table 16. Datasheet Version and Change Log Version Release Date 0.92 1/24/2013 1.0 12/18/13 Change Summary Preliminary * * * * * * * * * * * * * * added supported frequency table added 20 ppm option added No Connect (NC) option for Pin updated electrical spec to final values updated thermal consideration table added Maximum Operating Junction Temperature table added timing diagrams, test circuits and waveform diagrams added performance plots added programmable drive strength options added pin 1 option section (OE vs ST vs. NC) added Time Machine and Field Programmable Device section updated ordering info section added revision history added LifeTime Warranty icon in the feature section (c) SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. 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Rev. 1.0 Page 13 of 13 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.1 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised October 5, 2013 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: * SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability * World-class MEMS and CMOS design expertise Why is SiTime Best in Class: * Internal differential architecture for best common mode noise rejection * Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Mean Time Between Failure (Million Hours) - 30 - 39 500 IDT (Fox) 38 SiTime 20X Better 28 Epson TXC 16 Pericom 14 Average Spurs (dB) SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 200 0 Kyocera 600 400 Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. * SiTime's MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability * Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.1 Why is SiTime Best in Class: * On-chip regulators and internal differential architecture for common mode noise rejection * Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): * According to IEC EN61000-4.3 (Electromagnetic compatibility standard) * Field strength: 3V/m * Radiated signal modulation: AM 1 kHz at 80% depth * Carrier frequency scan: 80 MHz - 1 GHz in 1% steps * Antenna polarization: Vertical * DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: * MIL-STD-883F Method 2002 * Condition A: half sine wave shock pulse, 500-g, 1ms * Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.1 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 1. Does the Electrical Characteristics table provide complete information? Yes No If No, what parameters are missing? _________________________________________________________________________________________________ 2. Is the organization of this document easy to follow? Yes No If "No," please suggest improvements that we can make: _________________________________________________________________________________________________ 3. Is there any application specific information that you would like to see in this document? (Check all that apply) EMI Termination recommendations Shock and vibration performance Other If "Other," please specify: _________________________________________________________________________________________________ 4. Are there any errors in this document? Yes No If "Yes", please specify (what and where): _________________________________________________________________________________________________ 5. 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