A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 25 V
BVCES IC = 100 mA 55 V
BVEBO IE = 5.0 mA 3.5 V
hFE VCE = 5.0 V IC = 1.0 A 20 100 ---
COB VCB = 28 V f = 1.0 MHz 3.5 5 pF
PG
ηC
POUT
VCC = 28 V POUT = 110 W f = 860 MHz
ICQ = 2x200 mA
8.5
55
175
11
58
dB
%
W
Ψ VCC = 28 V POUT = 175 W f = 860 MHz
ICQ = 2x200 mA
5:1 ---
NPN SILICON RF POWER TRANSISTOR
PTB20101
DESCRIPTION:
The ASI PTB20101 is Designed for
General Purpose Class AB Power
Amplifier Applications up to 860 MHz.
FEATURES:
• 175 W, 470-860 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO 65 V
PDISS 330 W @ TC = 25 °C
TJ -40 °C to +150 °C
TSTG -40 °C to +150 °C
θJC 0.53 °C/W
PACKAGE STYLE .860 4L FLG
1,5 = COLLECTOR 3 = EMITTER 2,4 = BASE
