PD-94968B IRF1404PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 40V RDS(on) = 0.004 G ID = 202A S Description Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. Units 202 143 808 333 2.2 20 620 See Fig.12a, 12b, 15, 16 1.5 -55 to + 175 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 0.45 --- 62 C/W 1 04/11/12 IRF1404PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 --- --- 2.0 76 --- --- --- --- --- --- --- --- --- --- --- IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- LS Internal Source Inductance --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- V(BR)DSS V(BR)DSS/TJ IGSS Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.039 --- V/C Reference to 25C, ID = 1mA 0.0035 0.004 VGS = 10V, ID = 121A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 121A --- 20 VDS = 40V, VGS = 0V A --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 131 196 ID = 121A 36 --- nC VDS = 32V 37 56 VGS = 10V 17 --- VDD = 20V 190 --- ID = 121A ns 46 --- RG = 2.5 33 --- RD = 0.2 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 5669 --- VGS = 0V 1659 --- pF VDS = 25V 223 --- = 1.0MHz, See Fig. 5 6205 --- VGS = 0V, VDS = 1.0V, = 1.0MHz 1467 --- VGS = 0V, VDS = 32V, = 1.0MHz 2249 --- VGS = 0V, VDS = 0V to 32V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 202 showing the A G integral reverse --- --- 808 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 121A, VGS = 0V --- 78 117 ns TJ = 25C, IF = 121A --- 163 245 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 85H RG = 25, IAS = 121A. (See Figure 12) ISD 121A, di/dt 130A/s, VDD V(BR)DSS, TJ 175C 2 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. www.irf.com IRF1404PbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V TOP TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1000 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 20s PULSE WIDTH TJ = 175 C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25 C TJ = 175 C 100 10 V DS= 25V 20s PULSE WIDTH 4 5 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 12 2.5 ID = 202A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404PbF 10000 VGS , Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Ciss 6000 4000 Coss 2000 Crss 0 1 10 ID = 121A 16 12 8 4 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 100 150 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) 50 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 100 ID , Drain Current (A) 1000 10 10us 100us 100 TJ = 25 C 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS= 32V V DS= 20V 3.5 1ms 10ms 10 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404PbF 220 VDS LIMITED BY PACKAGE 200 VGS ID , Drain Current (A) 180 140 + -V DD 10V 120 Pulse Width 1 s Duty Factor 0.1 % 100 80 Fig 10a. Switching Time Test Circuit 60 VDS 40 90% 20 0 D.U.T. RG 160 RD 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404PbF DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 1500 15V ID 49A 101A BOTTOM 121A TOP 1200 A 900 600 300 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS -VGS(th) Gate threshold Voltage (V) 10 V 3.0 ID = -250A 2.0 1.0 -75 VGS -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1404PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 121A EAR , Avalanche Energy (mJ) 350 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = t av *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1404PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. For N-channel HEXFET(R) Power MOSFETs 8 www.irf.com IRF1404PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INT ERNAT IONAL RECT IF IER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220 package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2012 www.irf.com 9