2SK4120LS
No. A0823-1/4
Features
•Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•Adoption of high reliability HVP process.
•Attachment workability is good by Mica-less package.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 450 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature 10 A
IDpack*2 SANYO’s ideal heat dissipation condition 7.9 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 34 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition) 33 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 EAS 318 mJ
Avalanche Current *4 IAV 10 A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=5mH, IAV=10A
*4 L≤5mH, single pulse
Marking : K4120
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0823
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
70407QB TI IM TC-00000773
SANYO Semiconductors
DATA SHEET
2SK4120LS N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4120LS
No. A0823-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 450 V
Zero-Gate Voltage Drain Current IDSS VDS=360V, VGS=0V 100 µA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward T ransfer Admittance yfsVDS=10V, ID=5A 2.4 4.8 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=5A, VGS=10V 0.52 0.68 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 630 pF
Output Capacitance Coss VDS=30V, f=1MHz 140 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 32 pF
Turn-ON Delay T ime td(on) See specified Test Circuit. 18 ns
Rise T ime trSee specified Test Circuit. 54 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 73 ns
Fall T ime tfSee specified Test Circuit. 32 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=10A 24 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=10A 4.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=10A 15 nC
Diode Forward Voltage VSD IS=10A, VGS=0V 0.9 1.2 V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10µs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=5A
RL=40Ω
VDD=200V
VOUT
2SK4120LS
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4120LS
2SK4120LS
No. A0823-3/4
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
yfs -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT12534
IT12531
--50 --25 150
IT12536
IT12535
0.1 23 57
3
3
1.0
0.1
2
1.40.8 1.0 1.20.4 0.60.2
0.01
0.1
5
7
3
2
2
1.0
5
7
3
2
10
5
7
3
2
5
3
7
5
10
7
5
2
3
2
2
1.0 325357
10
0255075100 125
75°C
Tc=
--25°C
ID=5A
25°C
Tc= --25°C
25
°
C
75°C
VDS=10V
Tc=
75
°
C
25
°
C
--
25
°
C
VGS=0V
IT12538
02010 30
100
2
3
10
5
2
7
1000
3
5
7
2
3
105152030250
0
15
5
25
20
10
IT12533
6.5 7.0 7.5 8.0 108.5 9.0 9.56.0
0
0.2
0.4
2.0
0.6
1.0
1.4
1.8
1.2
1.6
0.8
0
0.2
1.6
1.4
0.4
0.6
1.0
0.8
1.2
IT12532
36 159120
0
10
25
20
30
15
5
Tc=25°C
10V
VDS=20V
5040
0.1 1.0 223 57 10
35 237
100
1000
10
7
7
5
3
2
7
3
5
2
IT12537
td(off)
td(on)
VDD=200V
VGS=10V
tf
tr
VGS=10V
,
ID=5
A
Tc=75°C
--25°C
f=1MHz
Ciss
Coss
Crss
8V
6V
VGS=5V
15V
25°C
2SK4120LS
No. A0823-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Note on usage : Since the 2SK4120LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of July, 2007. Specifications and information herein are subject
to change without notice.
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
A S O
PD -- Ta PD -- Tc
0
020 40 60 80 100 140120
20
25
30
33
35
15
10
5
40
160
IT12542
0
020 40 60 80 100 120
2.5
140 160
2.0
1.5
1.0
0.5
IT12541
IT12540
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
10
µ
s
100
µ
s
100ms
10ms
1ms
DC operation
1.0
23 57 2 10
357 2 100
357 2357
10
3
5
7
7
2
3
5
IDc(
*
1)=10A
IDpack(
*
2)=7.9A
Operation in
this area is
limited by RDS(on).
IDP=34A PW≤10µs
0252010 155
3
10
0
1
4
IT12539
8
9
5
6
7
2
VDS=200V
ID=10A
Tc=25°C
Single pulse *1. Shows chip capability
*2.
SANYO’s ideal heat dissipation condition
