SIEMENS NPN Silicon High-Voltage Transistors @ Suitable for video output stages in TV sets and switching power supplies @ High breakdown voltage @ Low collector-emitter saturation voltage @ Complementary types: BFN 17, BFN 19 (PNP} BFN 16 BEN 18 YPS05162 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BFN 16 DD Q62702-F885 B Cc E | SOT-89 BFN 18 DE Q62702-F 1056 Maximum Ratings Parameter Symbol Values Unit BFN 16 BFN 18 Collector-emitter voltage Voeo 250 300 Vv Collector-base voltage Vcea 250 300 Emitter-base voltage Veso 5 Collector current fe 200 mA Peak collector current Tom 500 Base current Ie 100 Peak base current Jams 200 Total power dissipation, Ts= 130 C Prot 1 Ww Junction temperature Ty 150 C Storage temperature range Tatg 65... + 150 Thermal Resistance Junction - ambient?) Rin Ja <75 KAW Junction - soldering point Rinss <20 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 1079 5.91SIEMENS BEN 16 BFN 18 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Viaryceo Vv Ic=1mA BFN 16 250 |- - BFN 18 300 |- - Collector-base breakdown voltage Viaryoso Ic = 100 pA BFN 16 250 |- - BFN 18 300 {- - Emitter-base breakdown voltage Veereso | 5 - - fe = 100 pA Collector-base cutoff current IcBo Vcs = 200 V BFN 16 - - 100 nA Ves = 250 V BFN 18 ~ - 100 nA Vce = 200 V, Ta= 150C BFN 16 - - 20 pA Vee = 250 V, Ta = 150 C BFN 18 - - 20 pA Emitter-base cutoff current Jeo - - 100 nA Vee=3V DC current gain Are - ic= 1MA, Vee=10V 25 - - Ic = 10 mA, Voce = 10 V1) 40 _ - Ic = 30 mA, Vee = 10 V1) BFN 16 40 _ - BFN 18 30 - - Collector-emitter saturation voltage") Veesat Vv Ic=20 mA, In =2mMA BFN 16 - ~ 0.4 BEN 18 - - 0.5 Base-emitter saturation voltage") VeEsat - -~ 0.9 Ic = 20 MA, le=2mMA AC characteristics Transition frequency f - 70 - MHz Ic = 20 mA, Vee = 10 V, f= 20 MHz Output capacitance Cobo - 1.5 - pF Vcs = 30 V, f= 1 MHz 1} Pulse test conditions: 1< 300 uns, D= 2%. Semiconductor Group 1080SIEMENS BFN 16 BFN 18 Total power dissipation Pr: = f (Ta"; Ts) * Package mounted on epoxy HP00S7S BFN 16/18 1.2 0.8 0.6 0.4 0.2 0.05 50 100 "Cc 150 ae WG Permissible pulse load Pict max/Ptoinc = f (tp) 103 BFN 16/18 EHPOOSES Pros max 5 Piot oc HC HR 107 5 10 5 " eG iH ml Ce Ce Nee UT | O!, PT i . ui Ci | @ ATT > fp Semiconductor Group to 108 107 1073 107 ~s st Operating range Ic = f (Vee) Ta = 25C, D=0 BFN 16/18 EHPOOS8O 105 mA Ie 107 5 10! 5 v5 103 5 102 Veen 10 5 10! Collector current Ic = f (Vee) Vce=10V { 3 QFN 16/18 EHPOO5S82 mA Ig t . 5 10! 5 5 0.5 1.0 Vis Vig 1081SIEMENS BFN 16 BFN 18 Transition frequency ft = f (Ic) Vee = 10V 1030 16/18 EHPOOS83 10? 10" 10 5 10! 5 107 mA 5 10 Le DC current gain Are = f (/c) Vee = 10V 103 BPN 16/13 EHPOOSBS to! 10 107 510 510' 5107 ma 10 Te Semiconductor Group Collector cutoff current /ceo = f (Ta) Vce = 200 V 104 BFN 16/18 EHPOOSS4 nA 10 logo 5 { igs 5 10! 5 10 5 197! 0 50 100 = *C.:150 =T, 1082