Diode
RapidSwitchingEmitterControlledDiode
IDW40E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
2
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
RapidSwitchingEmitterControlledDiode
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-notconnected
•Pin2-cathode
•Pin3-anode
A
C
1
2
3
KeyPerformanceandPackageParameters
Type Vrrm IfVf,Tvj=25°C Tvjmax Marking Package
IDW40E65D2 650V 40A 1.6V 175°C E40ED2 PG-TO247-3
3
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 650 V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave IFSM 250.0 A
PowerdissipationTC=25°C Ptot 180.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
Diode thermal resistance,1)
junction - case Rth(j-c) 0.84 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Diode forward voltage VF
IF=40.0A
Tvj=25°C
Tvj=175°C
-
-
1.60
1.65
2.30
-
V
Reverse leakage current IR
VR=650V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
4000.0
µA
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
5
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 36 - ns
Diode reverse recovery charge Qrr - 0.40 - µC
Diode peak reverse recovery current Irrm - 22.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -10000 - A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Diode reverse recovery time trr - 75 - ns
Diode reverse recovery charge Qrr - 0.13 - µC
Diode peak reverse recovery current Irrm - 2.9 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -54 - A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time trr - 60 - ns
Diode reverse recovery charge Qrr - 1.14 - µC
Diode peak reverse recovery current Irrm - 32.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -8700 - A/µs
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Diode reverse recovery time trr - 83 - ns
Diode reverse recovery charge Qrr - 0.32 - µC
Diode peak reverse recovery current Irrm - 5.6 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -51 - A/µs
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
6
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
Figure 2. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.015899
1.4E-5
2
0.19942
2.4E-4
3
0.23881
1.8E-3
4
0.34593
7.8E-3
5
0.036218
0.1290993
6
2.8E-3
2.085894
Figure 3. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
0 250 500 750 1000 1250 1500 1750 2000
0
10
20
30
40
50
60
70
80
90
100
110
120
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
Figure 4. Typicalreverserecoverychargeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
0 250 500 750 1000 1250 1500 1750 2000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
7
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
Figure 5. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irrm,REVERSERECOVERYCURRENT[A]
0 250 500 750 1000 1250 1500 1750 2000
0
5
10
15
20
25
30
35
40
45
50
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
Figure 6. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
0 250 500 750 1000 1250 1500 1750 2000
-16000
-14000
-12000
-10000
-8000
-6000
-4000
-2000
0
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
Figure 7. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
70
80
90
100
110
120
Tj=25°C
Tj=175°C
Figure 8. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF=20A
IF=40A
IF=80A
8
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
PG-TO247-3
9
IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
t
a
a
b
b
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
Et
tV I t
off = x x d
1
2
CE C
∫
Et
tV I t
on = x x d
3
4
CE C
∫
CC
10
IDW40E65D2
Emitter Controlled Diode
Rev. 2.1, 2013-12-16
Revision History
IDW40E65D2
Revision: 2013-12-16, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2013-03-14 Preliminary data sheet
1.2 2013-05-22 IFSM
2.1 2013-12-16 Final DS / New Marking Pattern
2.2 2013-12-16 Value VFmax limit according BE test
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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