SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101Silicon Transistors I i! oI 2N2713,4 The General Electric 2N2713 and 2N2714 are epoxy encapsulated planar epitaxial passivzted NPN silicon transistors specifically manufactured for general purpose commercial applications. They are particularly useful in output stages where low saturation voltage is desirable. They may also be used to advantage in switching applications due to their low storage time, good beta holdup to beyond 150 ma and low V CE(SAT). absolute maximum ratings: (25C) (uniess otherwise specified) Voltages Collector to Emitter Vero 18 Emitter to Base Veso 5 Collector to Base Veso 18 Current Collector* (Steady State) Ic 200 Dissipation Total Power (Free air @ 25C)** Pr 360 Temperature Storage Tatra -55C to +125 Operating Ty +100 *Determined from power limitations due to saturation voltage at this current. **Derate 3.6 mw/C increase in ambient temperature above 25C electrical characteristics: (25C) DC CHARACTERISTICS Collector Cutoff Current (Vcx = 18V) (Ves = 18V, Ts = 100C) Emitter Cutoff Current (Ves = 5V) Forword Current Transfer Ratio (Voz = 4.5V, Ic = 2 mA) 2N2713 2N2714 Collector Saturation Voltage (Is = 3 mA, Ic = 50 mA) Base Saturation Voltage (In = 3 mA, Ic = 50 mA) LARGE SIGNAL CHARACTERISTICS Input Impedance (Yan Vn ; where condition 1 is 2 IB1 In = .05 mA and condition 2 is Is = .6 mA, Vcz = 1V) SWITCHING SPEEDS Delay Time Rise Time Storage Time Fall Time (See Figure 1) volts 208 volts 18 volts fe 198 + NOTE 1: Lead diameter is controlled in the 075 zone between .070 and .250 from the seat ag mA ing plane. Between .250 and end of lead a 055 oes max. of .021 is held. 4 335 mw | TF 500 SEATING ALL DIMEN. IN INCHES AND ARE i fl MIN PLANE REFERENCE UNLESS TOLERANCED I b t+ 050 * .005 C 100% 0 C 4 ij OS 3 LEADS 4.002 030 ONT 001 (NOTE 1) ane fg Min. Typ. Max. Tezo 0.1 pA CBO 15 pA Izno 0.5 pA hrs 30 90 hrs 75 225 Venaan 0.30 volts Vanisar 1.3 volts hie 200 ohms ta 60 ns tr 85 ns ts 85 ns te 40 ns 343[2n2713,4 | 200 100 80 Ico VS TEMPERATURE 2N2713, 2N2714 60 Veg = 18V 40 20 2N2713 . 9 = (0 Oo 2N2714 Ee 7 / 4 2 | 0 20 40 60 80 100 TEMPERATURE IN C 0.6 0.5 Veetsat) VS Ic 2N2713, 2N2714 of Ig/Tg =t0 / 5 Ta = 25C o > z = 03 z < a a 8 > 02 ol | et jane" Lp ' 2 6 8 10 20 40 60 80 100 200 400 600 800 1000 Ic IN mA 100 r i z A DISTRIBUTION z OF Ve (sat) - 80 } 2N2713, 2N27I4 3 Ig = 50mA a al Ig 3ma & Ta = 25C oO - a = 60 4. oa wl <z = 5 eo & 40 a oe Oo ws oO a Eb =z & & 20 Ww a 004 0.06 0.08 0.1 0.12 0.14 0.16 0.18 Veeisar) IN VOLTS 344hfe OR hee h.. orhre VS- Ic - TYPE 2N2713 120 T TT hee VS I 2N27I3 Vee = 5V Lt 100 - hee VS Te I Veg =5V Nee IKH LT = f= ikHz L ae] min 455kHz / 60 L IMHz Ay \ hee Tax25C X LV C hte 455kHz co \ 60 \ WA \ 40 s TT he IMHz 20 0.01 0.1 I 2 4 62810 too $000 I, iN mA hie Or here VS. Ic - TYPE 2N2714 240 | | | hre VS Ic 200 2N2714 Voce =5V Lat hee VS le a oo} Vep =5V te Ke 160 f = IkHz 4 Ta= 25C | va oN 120 7 \ Vy, vA 40 be 0.01 0.1 | 2 4 6 810 100 4000 I INMA 345 2N2713, 4[2n2713,4 | hre VS. Ic - TYPE 2N2713 hte VS Te PD '0 2N2713 Ty =25C ht, AT 20m) : Z Vee *8V Va \ Y | ERTS 4 |] a L_ LY" | | 2 te. Lo | +7 | al 2 4 6 6 10 100 Ig IN mA he VS. Io - TYPE 2N2714 20 16 = hg, VSI wa a uo7ia. hy, AT 20MHz ; ree gsre y 8 7 i 4 hy, AT 40MHz| 4] 4 [7 _ LL [of ou \ 2 4 6 68 10 100 346= 2MA; f= 1kHz 5V; Ie AT Veg te 200 160 80 40 TYPES 2N2713, 2N2714 2N2713, 4 18 | . | 16 Cho VS VOLTAGE | x 2N2713, 2N2714 Ie +0 hte AT IKHZVS hee Ta 225C 2N2713,2N2714 t= IMH Vo 2 5V A 4 ; Ig * 2mA i Ta = 25C . i i | { uw 12 a x a z 3 x 9 10 7% A 8 MS 6 xs hee AT (20 {60 200 240 280 Vee = 5V; Ic = 2MA Vee IN VOLTS 0.2 0 \ VS Ie 2N27I3, ZN27I4 Voz5V Ta =25C (INFORMATION FROM MODEL N 310 TRANSISTOR NOISE " E ANALYZER QUAN-TECH l= LABS, INC.) > Ey = - a a Tyg ee as = S$ t 2 @ 0.01 01 2 x * z z He ua 0.00! 0.01 0.01 0.1 \ 2 4 68 Ig INMA 10,000 OPTIMUM SOURCE IMPEDANCE FOR LOW NOISE VS Ig 2N2713, 2N2714 Veets Tat25C i000 (INFORMATION FROM MODEL 310 TRANSISTOR NOISE ANALYZER QUAN TECH LABS, INC.) OPTIMUM SOURCE IMPEDANCE IN OHMS 100 0.01 O41 ' 2 4 6 8 Ig INMA 347 ' 2 4 6