TOSHIBA 188272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 188272 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm +0.2 e@ Small Package : SC-61 @ Low Forward Voltage > VF (3)=0.92V (Typ.) 2940.2 e Fast Reverse Recovery Time : tpyp=1.6ns (Typ.) @ Small Total Capacitance : Cp=0.9pF (Typ.) 150208 MAXIMUM RATINGS (Ta =25C) 8 so yo CHARACTERISTIC SYMBOL | RATING UNIT et 2 Maximum (Peak) Reverse Voltage VRM 85 Vv 7 8 3 Reverse Voltage VR 80 Vv 1. CATHODE 8 : 2. CATHODE *' Maximum (Peak) Forward Current Irm 300 (*) | mA 3. ANODE 1b 4 Average Forward Current Io 100 (*) | mA 4. ANODE 20441033 Surge Current (10ms) Irom 2 (*) A SMQ Power Dissipation P 150 mW || JEDEC Junction Temperature Tj 125 C EIAJ SC-61 Storage Temperature Tstg 55~125 C TOSHIBA 2-331A Weight : 0.013g (*) Unit Rating, Total Rating=Unit Rating x1.5 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF(1) |Ip=lmA 0.61 | Forward Voltage VF(2) |Ip=10mA | 074) v VF(3) |Irp=100mA 0.92 | 1.20 T Vp=30V _ _ 0.1 Reverse Current RQ) R pA TR (2) VR=80V 0.5 Total Capacitance Cy VrR=0, f=1MHz 0.9 | 2.0 | pF Reverse Recovery Time try Ip=10mA, Fig.1 1.6 4.0 ns MARKING A 1 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2TOSHIBA 188272 FORWARD CURRENT Ip (A) TOTAL CAPACITANCE Cr (pF) 100m 1m 1004 104 0.3 Ip VF 10y Ta=100C A 25 100n REVERSE CURRENT Ip (A) 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (CV) CT VR Ta=25C f=1MHz REVERSE RECOVERY TIME try (us) 1 3 10 30 REVERSE VOLTAGE VR (V) Fig.1 REVERSE RECOVERY TIME (try) TEST CIRCUIT In 0 0.5 100 0.1 0.3 1 3 10 IR VR 20 40 60 80 REVERSE VOLTAGE VR (V) trr IF 30 (50 FORWARD CURRENT Ip (mA) INPUT WAVEFORM 0.01LF DUT OUTPUT WAVEFORM 0 - INPUT OUTPUT C a Ip=10mA t ot oy S ov. oS Q A 6V iD E 1D 4 + I 0.11 50ns R R PULSE GENERATOR SAMPLING v (RouT=500) OSCILLOSCOPE ter (Rj =50Q) > 961001 EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 2/2