BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for emitter-grounded IF stages in TV sets. Absolute Maximum Ratings max.25 ole max.05 125 Plastic case = JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Symbol Value Unit Collector Base Voltage Veso 40 Vv Collector Emitter Voltage Voeo 25 Vv Emitter Base Voltage VeBo 4 Vv Collector Current lo 25 mA Base Current lp 2 mA Power Dissipation at Tamp = 25 C Prot 300) mW Junction Temperature T; 150 C Storage Temperature Range Ts -55...+150 C ) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 88BF199 Characteristics at Tan, = 25C Symbol Min. Typ. Max. Unit DC Current Gain at Vee = 10 V, lo = 7MA hee 38 88 - - Base Emitter Voltage at Vcg = 10 V, lo = 7MA VBE - 750 - mV Collector Cutoff Current at Vcg = 40 V lceBo - 100 nA Thermal Resistance Junction to Ambient Riha ~ - 420") K/W Feedback Capacitance Cre 0.32 = pF at Vep =10V, le =1 mA, f = 1 MHz Gain Bandwidth Product fr 550 MHz at Veg = 10 V, Ip = 5 mA, f = 100 MHz y-Parameters (emitter grounded) at f = 35 MHz, Vog = 10 V, lo = 7MA Input Admittance Gie - 5 _ mS Output Admittance Qoe - 75 - us Input Capacitance Cie - 45 - pF Output Capacitance Coe 1.6 - pF Forward Transconductance | Vte | - 175 - mS Vie - 25 - Reverse Transconductance 1 Yre | - 65 - ps Pre - ~95 - " Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case Admissible power dissipation Common emitter versus ambient temperature input characteristic Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case mw BF 199 mA BF 199 500 05 -t Veg =10V Tm =25C 400 . Pot I 0.4 300 03 iN 200 N 0.2 \ 100 Ny 01 N ) 0 \ , B 0 100 200C 0 05 1V a Tame $< Vpe 89BFi99 mA Common emitter collector characteristics BF 199 Collector current versus base current mA BF 199 25 T T Vor =10 Vv t Tamb= 25 C Z Ic 20 15 0 Ql 02 03 04 05 mA mA Common emitter collector characteristics BF 199 Tamb 25 C 0 10 20 30 V Ke Gain bandwidth product versus emitter current MHZ BF 199 4000 T Yeg=10V + Tamp= 25C f, 800 600 400 [ ~ | . 200 0 0 5 10 as) 20 25 mA 90BF199 Forward transconductance versus emitter current ms BF 199 200 Veg = 10 Vv + f = 35 MHz [ps Tamp2=25C/1 ~ A : ZL \ , [ \ f 100 | 91