4-49
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
13
2
4
RF OUTRF IN
GND
GND
MARKING - N5
NBB-500
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Des igns (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NBB-500 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-perf ormance solution for gen-
eral purpose RF and micro wa ve amplifi cat ion ne eds . This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-500 provides flexibility and stability. The
NBB-500 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either packaged or chip (NBB-500-D) form, where its gold
metallization is ideal for hybrid circuit designs.
• Reliable, Low-Cost HBT Design
• 19.0dB Gain, +12.3dBm P1dB@2GHz
• High P1dB of +14.0dBm@6.0GHz
• Single Power Supply Operation
•50Ω I/O Matched for High Freq. Use
NBB-500 Cascadabl e Broadb and GaAs M MIC Amplifier DC to
4GHz
NBB-500-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-500-D NBB-500 Chip Form (100 pieces minimum order)
NBB-500-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
0
Rev A5 050414
UNITS:
Inches
(mm)
N5
0.070
(1.78)
0.040
(1.02)
0.020
0.200 sq.
(5.08)
45° 0.055
(1.40)
0.005
(0.13)
Package Style: Micro-X, 4-Pin, Ceramic
9
RoHS Compliant & Pb-Free Product
4-50
NBB-500
Rev A5 050414
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
De vice Current 70 mA
Channel Temperature 200 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.9V, ICC=35mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21 19.0 20.5 dB f=0.1GHz to 1.0GHz
19.5 dB f=1.0GHz to 2.0GHz
16.0 18.5 dB f=2.0GHz to 4.0GHz
Gain Flatness, GF ±0.8 dB f=0.1GHz to 3.0GHz
Input and Output VSWR 1.70:1 f=0.1GHz to 4.0GHz
1.45:1 f=4.0GHz to 6.0GHz
1.65:1 f=6.0GHz to 10.0GHz
Bandwidth, BW 4.2 GHz BW3 (3dB)
Output Power @
-1dB Compression, P1dB 12.3 dBm f=2.0GHz
14.0 dBm f=6.0GHz
Noise Figure, NF 3.2 dB f=3.0GHz
Third Order Intercept, IP3 +26.5 dBm f=2.0GHz
Reverse Isolation, S12 -17.0 dB f=0.1GHz to 10.0GHz
De vice Voltage, VD 3.6 3.9 4.2 V
Gain Temperature Coefficient,
δGT/δT-0.0015 dB/°C
MTTF versus Temperature
@ ICC=35mA
Case Temperature 85 °C
Junction Temperature 120 °C
MTTF >1,000,000 hours
Thermal Resistance
θJC 256 °C/W JTTCASE
–
VDICC
⋅
---------------------------θJC °CWatt⁄()=
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Mi cro Devi ces reserves the right to
make changes to its product s without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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NBB-500
Rev A5 050414
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal run-
away. Because DC is present on this pin, a DC blocking capacitor, suit-
able for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
4GND
Same as pin 2.
R
VCC VDEVICE
–()
ICC
-------------------------------------------
=
RF OUT
RF IN
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NBB-500
Rev A5 050414
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and ther mal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC (Ω) 31 117 174 231 317 460
C block
1 3
4
2VDEVICE
C block
In Out
L choke
(optional)
RCC
VCC
VD = 3.9 V
4-53
NBB-500
Rev A5 050414
Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die materi al shall be nego-
tiated on a case-by-case basis.
• Segmented die are sele cted for customer shipment in accordance with RFMD Docume nt #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 40 0 die per carrier is allow-
able.
Die Packa ging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 s egments), Retention Level=High(X8).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a co ntrolled nitrogen environment. Do not press on the cove r of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled usin g vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
INPUTOUTPUT
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.017 ± 0.0 01
(0.44 ± 0.03) 0.004 ± 0.001
(0.10 ± 0.03)
UNITS:
Inches
(mm) Back of chip is ground.
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NBB-500
Rev A5 050414
Die Attach
• The die attach pr ocess mechanically atta ches the die to the circuit sub strate . In addition, the utili zation of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-
ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-
strate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
• Some die utilize vias f or eff ectiv e grounding. Care must be e x ercised when mounting die to preclude excess run-out
on the topside.
Die Wire Bonding
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-
able practices for wire bonding.
• All bond wires should be made as short as possible.
Notes
1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die
inspection personnel to deter mine final visual acceptance of die product prior to shipping to customers.
2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to min-
imize material shift. However, due to the physical size of die-level produ ct, RFMD does not guarantee that mater ial will
not shift dur ing transit, especially under extreme handling circumstances. Product replac ement due to mater ial shift will
be at the discretion of RFMD.
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NBB-500
Rev A5 050414
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias In structions and Specification Summary Index for ease of operation
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NBB-500
Rev A5 050414
Tape and Reel Dimensions
All Dimensions in Millimeters
FLANGE B
T
F
330 +0.25/-4. 0
18.4 MAX
12.4 +2.0
Diameter
Thickness
Space Between Flange
13.0 +0.079/-0.158
0.724 MAX
0.488 +0.08
HUB
O
S
A
102.0 REF
13.0 +0.5/-0.2
1.5 MIN
Outer Diameter
Spindle Hole Diameter
Key Slit Width D20.2 MINKey Slit Diameter
4.0 REF
0.512 +0.020/-0.008
0.059 MIN
0.795 MIN
330 mm (13") REEL Micro-X, MPGA
SYMBOL SIZE (mm)ITEMS SIZE (inches)
BA
DO
S
F
T
LEAD 1
User Direction of Feed
Ao = 7.0 MM
A1 = 1.45 MM
Bo = 7.0 MM
B1 = 0.9 MM
Ko = 2.0 MM
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pock et po sition relative to s p rocket hole m easured as true position of pocket, not pocket hole.
A
A
SECTION A-A 8.0
Ao A1
2.5
B1
Bo
5.0 MIN.
2.00 ± 0.05
SEE NOTE 6
4.0
SEE NOTE 1
R0.3 MAX.
0.30
± 0.05
All dimensions in mm 5.0 +0.1
-0.0 B1
12.0
± 0.3
5.50 ± 0.05
SEE NOTE 6
1.75
R0.3 TYP.Ko
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NBB-500
Rev A5 050414
Device Voltage versus Amplifier Current
3.85
3.90
3.95
4.00
20.00 25.00 30.00 35.00 40.00 45.00 50.00
Ampl ifi er Current, ICC (mA)
Device Voltage, VD (V)
P1dB versus Frequency at 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
1.0 2.0 3.0 4.0 5.0 6.0
Fre quency (GHz)
P1dB (dBm)
POUT/Gain versus PIN at 2 GHz
0.0
5.0
10.0
15.0
20.0
25.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
POUT/Gain versus PIN at 6 GHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
Third Order Intercept versus Frequency at 25°C
0.0
5.0
10.0
15.0
20.0
25.0
30.0
1.0 2.0 3.0 4.0 5.0 6.0
Fr equency (GHz)
Output IP3 (dBm)
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NBB-500
Rev A5 050414
Note: The s-parameter gain results shown below include device perfor mance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fre quency (GHz)
S11 (dB)
+25 C
-40 C
+85 C
S12 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fr equency (GHz)
S12 (dB)
+25 C
-40 C
+85 C
S21 versus Frequency, Over Temperature
-40.0
-30.0
-20.0
-10.0
0.0
10.0
20.0
30.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fre quency (GHz)
S21 (dB)
+25 C
-40 C
+85 C
S22 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fr equency (GHz)
S22 (dB)
+25 C
-40 C
+85 C
