Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008. Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japa n
http://www.okisemi.com/en/
1/15
¡ Semiconductor MD51V65400
DESCRIPTION
The MD51V65400 is a 16,777,216-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MD51V65400 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MD51V65400 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.
FEATURES
• 16,777,216-word ¥ 4-bit configuration
• Single 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh :
RAS-only refresh : 4096 cycles/64 ms
CAS before RAS refresh, hidden refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
•CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
32-pin 400 mil plastic SOJ (SOJ32-P-400-1.27) (Product : MD51V65400-xxJA)
32-pin 400 mil plastic TSOP (TSOPII32-P-400-1.27-K) (Product : MD51V65400-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
¡ Semiconductor
MD51V65400
16,777,216-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
90 ns 504 mW
Family Access Time (Max.) Cycle Time
(Min.) Standby (Max.)
Power Dissipation
MD51V65400-50
t
RAC
50 ns
t
AA
25 ns
t
CAC
13 ns
t
OEA
13 ns
MD51V65400-60 60 ns 110 ns 432 mW
30 ns 15 ns 15 ns
Operating (Max.)
1.8 mW
E2G0136-18-11
This version: Mar. 1998
2/15
¡ Semiconductor MD51V65400
PIN CONFIGURATION (TOP VIEW)
3
4
5
9
10
11
12
13
DQ2
NC
NC
RAS
A0
A1
A2
A3
30
29
28
24
23
22
21
20
DQ3
NC
NC
NC
A11
A10
A9
A8
2
DQ1 31 DQ4
1
V
CC
32 V
SS
32-Pin Plastic SOJ
3
4
5
9
10
11
12
13
30
29
28
24
23
22
21
20
231
132
32-Pin Plastic TSOP
(K Type)
6NC 27 NC 27
8WE 25 OE 25
6
8
7NC 26 CAS 267
14A4 19 A7 14 19
DQ2
NC
NC
RAS
A0
A1
A2
A3
DQ1
V
CC
NC
WE
NC
A4
DQ3
NC
NC
NC
A11
A10
A9
A8
DQ4
V
SS
NC
OE
CAS
A7
Pin Name Function
A0 - A11 Address Input
RAS Row Address Strobe
CAS Column Address Strobe
DQ1 - DQ4 Data Input/Data Output
OE Output Enable
WE Write Enable
V
CC
Power Supply (3.3 V)
NC No Connection
15A5 18 A6 15 18
16V
CC
17 V
SS
16 17
A5
V
CC
A6
V
SS
V
SS
Ground (0 V)
Note : The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
3/15
¡ Semiconductor MD51V65400
BLOCK DIAGRAM
Timing
Generator
Refresh
Control Clock
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Row
Deco-
ders Word
Drivers
Memory
Cells
Sense Amplifiers
Column Decoders
I/O
Controller
I/O
Selector
Output
Buffers
Input
Buffers
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
CC
DQ1 - DQ4
CAS
WE
A0 - A11
12 12
4
44
4
44
12
12
OE
RAS
V
SS
4/15
¡ Semiconductor MD51V65400
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25°C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Rating
mA
W
°C
°C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
3.3
0
—
—
Typ.Parameter
3.0
0
2.0
–0.3
Min.
3.6
0
V
CC
+ 0.3
0.8
Max.
(Ta = 0°C to 70°C)
V
Unit
V
V
V
Input Capacitance (A0 - A11)
Input Capacitance (RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
—
—
—
Typ.
5/15
¡ Semiconductor MD51V65400
DC Characteristics
Notes : 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
Parameter
Symbol
Condition
MD51V65400
-60
MD51V65400
-50
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
I
OH
= –2.0 mAOutput High Voltage
I
OL
= 2.0 mAOutput Low Voltage
0 V £ V
I
£ V
CC
+ 0.3 V;
All other pins notInput Leakage Current
under test = 0 V
DQ disable
Output Leakage Current 0 V £ V
O
£ V
CC
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply RAS, CAS
Current (Standby)
RAS cycling,Average Power
CAS = V
IH
,Supply Current
t
RC
= Min.(RAS-only Refresh)
RAS = V
IH
,
Power Supply CAS = V
IL
,
Current (Standby) DQ = enable
Average Power
CAS before RAS
Supply Current
(CAS before RAS Refresh)
RAS = V
IL
,Average Power
CAS cycling,Supply Current
t
PC
= Min.(Fast Page Mode)
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
≥ V
CC
–0.2 V
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
120
1
0.5
120
5
120
80
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
140
1
0.5
140
5
140
90
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
RAS cycling,
6/15
¡ Semiconductor MD51V65400
AC Characteristics (1/2)
Parameter
MD51V65400
-60
MD51V65400
-50
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
Transition Time
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Pulse Width
CAS Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address to RAS Lead Time
Access Time from OE
OE to Data Output Buffer Turn-off Delay Time
Refresh Period
RAS Hold Time referenced to OE
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
RAS Hold Time from CAS Precharge
Symbol
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
T
t
RP
t
RAS
t
RASP
t
RSH
t
CAS
t
CSH
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
OEA
t
OEZ
t
REF
t
ROH
t
RHCP
Note
4, 5, 6
4, 5
4, 6
4
5
6
4
7
3
Output Low Impedance Time from CAS nst
CLZ
4
CAS Precharge Time (Fast Page Mode) nst
CP
ns
CAS
to Data Output Buffer Turn-off Delay Time
nst
OFF
7
Min.
90
131
35
76
—
—
—
—
3
30
50
50
13
13
50
17
12
5
0
7
0
7
25
—
0
—
13
0
7
30
0
Max.
—
—
—
—
50
13
25
30
50
—
10,000
100,000
—
10,000
—
37
25
—
—
—
—
—
—
13
13
64
—
—
—
—
13
Min.
110
155
40
85
—
—
—
—
3
40
60
60
15
15
60
20
15
5
0
10
0
10
30
—
0
—
15
0
10
35
0
Max.
—
—
—
—
60
15
30
35
—
50
—
10,000
100,000
—
—
10,000
—
45
30
—
—
—
—
—
—
15
15
64
—
—
15
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
ns
ns
ns
t
RCS
t
RCH
t
RRH
8
8
0
0
0
—
—
—
0
0
0
—
—
—
7/15
¡ Semiconductor MD51V65400
AC Characteristics (2/2)
MD51V65400
-60
MD51V65400
-50
Write Command Pulse Width
Write Command to CAS Lead Time
Write Command to RAS Lead Time
Data-in Set-up Time
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
RAS to CAS Hold Time (CAS before RAS)
CAS Active Delay Time from RAS Precharge
Data-in Hold Time
Write Command Hold Time
OE Command Hold Time
OE to Data-in Delay Time
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Write Command Set-up Time
tWP
tCWL
tRWL
tDS
tCWD
tRWD
tAWD
tCHR
tRPC
tDH
tWCH
tOEH
tOED
tWCS
Parameter
Symbol
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit Note
10
9
9
9
10
9
RAS to CAS Set-up Time (CAS before RAS)t
CSR ns
WE to RAS Precharge Time (CAS before RAS)
tWRP ns
WE Hold Time from RAS (CAS before RAS)t
WRH ns
CAS Precharge WE Delay Time tCPWD 9
ns
Min.
10
15
15
0
40
85
55
10
5
10
10
15
15
0
10
10
10
60
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
7
13
13
0
36
73
48
10
5
7
7
13
13
0
10
10
10
53
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8/15
¡ Semiconductor MD51V65400
Notes: 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF.
The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ t CWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
9/15
¡ Semiconductor MD51V65400
,
"H" or "L"
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
DQ V
OH
V
OL
–
–
Address V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
OE V
IH
V
IL
–
–
,,
,
t
RC
t
RAS
t
RP
t
CRP
t
CSH
t
CRP
t
RCD
t
RSH
t
CAS
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
Row Column
t
RCS
t
RRH
t
RCH
t
AA
t
ROH
t
OEA
t
CAC
t
RAC
t
OEZ
t
OFF
Open
t
CLZ
Valid Data-out
"H" or "L"
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
DQ V
IH
V
IL
–
–
Address V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
OE V
IH
V
IL
–
–
,
,
,,
t
RC
t
RAS
t
RP
t
CRP
t
RCD
t
CSH
t
RSH
t
CRP
t
CAS
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
Row Column
t
WCS
t
WCH
t
DS
t
DH
Valid Data-in
t
WP
t
RAL
,,
Open
t
CWL
t
RWL
TIMING WAVEFORM
Read Cycle
Write Cycle (Early Write)
E2G0114-17-41R
10/15
¡ Semiconductor MD51V65400
Read Modify Write Cycle
"H" or "L"
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
DQ V
I/OH
V
I/OL
–
–
Address V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
OE V
IH
V
IL
–
–
,
,,
t
RWC
t
RAS
t
RP
t
CRP
t
CSH
t
RCD
t
CRP
t
RSH
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
Row Column
t
CWD
t
CWL
t
RWD
t
RWL
t
WP
t
AA
t
AWD
t
OEA
t
OED
t
CAC
t
RAC
t
OEZ
t
DS
t
DH
t
CLZ
Valid
Data-out
Valid
Data-in
t
RAD
t
RCS
t
OEH
11/15
¡ Semiconductor MD51V65400
Fast Page Mode Read Cycle
Fast Page Mode Write Cycle (Early Write)
"H" or "L"
RAS
CAS
VIH
VIL
–
–
VIH
VIL
–
–
DQ VIH
VIL
–
–
Address VIL
–
–
WE VIH
VIL
–
–
,
,
,
tRASP tRP
tCRP tRCD
tCAS
tCP tCAS
tRSH
tCRP
tCAS
tASR tRAH tCAH
tCSH tASC tCAH tASC tCAH
tRAL
Row Column Column Column
tRAD
tWCS tWCH
tWP
tWCS tWCH
tWP
tWCS tWCH
tWP
tDS tDH tDS tDH tDS tDH
Valid Data-in Valid
Data-in
Valid
Data-in
Note: OE = "H" or "L"
VIH
tASC
tPC tRHCP
tCP
tCWL tCWL tRWL
tCWL
,
"H" or "L"
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
DQ V
OH
V
OL
–
–
Address V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
OE V
IH
V
IL
–
–
,
,
,
t
RASP
t
RP
t
CRP
t
RCD
t
PC
t
RSH
t
CRP
t
CAS
t
CAS
t
CP
t
CAS
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
CSH
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
Row Column Column Column
t
RCS
t
RCH
t
RCS
t
RCS
t
RCH
t
AA
t
OEA
t
AA
t
AA
t
RRH
t
OEA
t
OEA
t
CAC
t
RAC
t
OFF
t
OEZ
t
CAC
t
CLZ
t
OFF
t
OEZ
t
CAC
t
CLZ
t
OEZ
t
OFF
t
CLZ
Valid
Data-out
Valid
Data-out
Valid
Data-out
t
RHCP
t
CP
t
RCH
t
CPA
t
CPA
12/15
¡ Semiconductor MD51V65400
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
Address V
IH
V
IL
–
–
,
t
RC
t
RAS
t
RP
t
CRP
t
RPC
t
ASR
t
RAH
Row
"H" or "L"
DQ V
OH
V
OL
–
–
Note: WE, OE = "H" or "L"
Open
t
OFF
Fast Page Mode Read Modify Write Cycle
t
WP
RAS
CAS
Address
OE
V
IH
V
IL
–
–
V
IH
V
IL
–
–
V
IH
V
IL
–
–
V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
DQ V
I/OH
V
I/OL
–
–
,
,
,
,
,
,
,
t
RASP
t
RP
t
CSH
t
PRWC
t
RSH
t
RCD
t
CAS
t
CP
t
CAS
t
CP
t
CAS
t
CRP
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
Row Column Column Column
t
RWD
t
RCS
t
CWD
t
CWL
t
CWD
t
CWL
t
CWD
t
RWL
t
CWL
t
AWD
t
AWD
t
AWD
t
OEA
t
WP
t
OEA
t
WP
t
OEA
t
AA
t
OED
t
CAC
t
DS
t
DH
t
CAC
t
AA
t
RAC
t
DS
t
DH
t
CPA
t
OED
t
CAC
t
AA
t
DS
t
DH
t
CLZ
t
CLZ
t
CLZ
Out In Out OutIn In
t
ROH
t
OEZ
t
OEZ
t
CPA
t
OED
t
RCS
t
RCS
t
CPWD
t
CPWD
"H" or "L"
t
OEZ
RAS-Only Refresh Cycle
13/15
¡ Semiconductor MD51V65400
RAS
CAS
VIH
VIL
–
–
VIH
VIL
–
–
Column
Row
DQ VOH
VOL
–
–
WE VIH
VIL
–
–
OE VIH
VIL
–
–
Address VIH
VIL
–
–
,
,,
,
,,
tRC tRC
tRAS tRP tRAS tRP
tCRP tRCD tRSH tCHR
tRAD
tASR
tASC
tRAH tCAH
tRCS tRAL
tRRH
tAA
tROH
tOEA
tCAC
tCLZ
tRAC
tOFF
tOEZ
Valid Data-out
"H" or "L"
tWRH
tWRP
CAS before RAS Refresh Cycle
Hidden Refresh Read Cycle
PQRS
LM
V
IH
V
IL
RAS
t
RP
–
–
CAS V
IH
V
IL
–
–
V
IH
V
IL
WE
V
V
"H" or "L"
t
RC
t
RAS
t
RPC
t
CHR
t
RP
t
RPC
t
CP
t
CSR
t
WRP
t
WRH
t
OFF
t
WRP
Open
–
–
OL
OH
–
–
DQ
Note: OE, Address = "H" or "L"
14/15
¡ Semiconductor MD51V65400
Hidden Refresh Write Cycle
RAS
CAS
V
IH
V
IL
–
–
V
IH
V
IL
–
–
DQ V
IH
V
IL
–
–
WE V
IH
V
IL
–
–
OE V
IH
V
IL
–
–
Address V
IH
V
IL
–
–
,,
,
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
CRP
t
RCD
t
RSH
t
CHR
t
RAD
t
ASC
t
ASR
t
RAH
t
CAH
t
RAL
Row Column
t
WCS
t
WCH
t
WP
t
DS
t
DH
Valid Data-in
,
"H" or "L"
t
WRH
t
WRP
15/15
¡ Semiconductor MD51V65400
(Unit : mm)
PACKAGE DIMENSIONS
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
SOJ32-P-400-1.27
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.42 TYP.
Mirror finish
