GaAs MMIC SP4T FET Non-Reflective Switch in LQFP 32 Package DC-2 GHz AS002M4-61 Features M 32 Lead Plastic Package (LQFP) 0.025 tnch Small Size Lead Pitch Requires Only 0.133 in? (86 mm?) PCB Space @ High Isolation (52 dB Typical at 900 MHz) Non-Reflective All Ports Description The AS002M461 is a high isolation SP4T FET MMIC non-reflective switch. The switch operates with 0 and 5 volts over the frequency range of DC to 2 GHz. The switch is ideal for cellular base stations when channel switching is required. It can also be used as high isolation SPDT Switch. Electrical Specifications at 25 C Insertion DC-0.5 GHz 1.7 dB Max Loss! DC1 GHz 2.0 dB Max DC-2 GHz 2.4 dB Max Isolation DC-0.5 GHz 52 dB Min DC-1 GHz 47 dB Min DC-2 GHz 35 dB Min VSWR 1/0 DC-1 GHz 1.611 Max DC-2 GHz 1.8:1 Max 1. Insertion Loss changes by 0.003 dB/C. 2. Measured in 500 MHz bandwidth with 1 ns risetime pulse. . Jon Lf Operating Characteristics at 25 C Impedance 50Q Nominal Switching Characteristics RISE, FALL (10/90% or 90/10% RF) 15 ns Typ ON, OFF (50% CTL to 90/10% RF) 30 ns Typ Video Feedthru2 30 mV Typ Input Power for 1 dB Compression Control Voltages (Vdc) O/-5 0/-8 0.5-2 GHz +24 +30 dBm Typ 0.001 GHz +16 +20 dBm Typ Intermodulation Intercept Point (for Two-Tone Input Power up to +13 dBm, Vpc = -8V) Intercept Points IP2 IP3 0.5-2.0 GHz +62 +40 dBm Typ 0.001 GHz +51 +29 dBm Typ Control Voltages Vo (Low) 0 to -0.2V @ 20 pA Max Vo (High) 5V @ 100 LA to -9V @ 500 nA Max 1-54 ALPHA INDUSTRIES, INC. 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579GaAs MMIC SP4T FET Non-Reflective Switch in LQFP 32 Package DC-2 GHz AS002M4-61 Performance Data 3.0 70 - 25 -- 2.5 | | 60 mo [| 2.2 | | | ' 85C | SN : | | 2.0 ae | 50 P., _ 19 __! a : -4 ~ g | IN a- 4 | 15 Ly} = << 40 Mo 1.6 -4 4 yy Va ao -55C as a 1.0 ~~ 30 ; 1.3 a - . Z | | | : | 0.5 < i | i 20 | | | | I 1.0 4 1 | _l pc { 2 Dc 1 2 DC 1 2 GHz GHz GHz Insertion Loss vs. Frequency isolation vs. Frequency VSWR vs. Frequency Switch Schematic J1 9 J5o J2 50Q Termination Truth Table Pin Out insertion J3 J2 J5 J4 Pin # Description Pin # Description Loss Path J1 to: v1 v2 V3 | V4 | V5 | V6 | V7 | V8 1 GND 17 vB J2 0 +5 |-s5fof[+s5fol]s]o 2 GND 18 v7 3 GND 19 V6 J3 5 0 o/5|5]/o0]+5]o0 4 wu 20 V5 J4 0 5 o|5]|-5]0]01]-5 5 GND 21 v4 6 GND 22 v3 J5 a 5 0/5 ]o]-5]-5] 0 7 GND 23 v2 8 GND 24 v1 . . 9 J5 25 GND Absolute Maximum Ratings 10 GND 26 GND 14 GND 27 GND RF Input Power: 2W > 500 MHz 0/-8V 12 GND 28 J3 0.5W @ 50 MHz 0/-8V 13 cup 29 GND 14 30 GND Control Voltage: +0.2V, -10V 15 GND 31 GND Operating Temperature: -55C to 125C 16 GND 32 J2 Storage Temperature: -65C to 150C Thermal Resistance: 25C/W ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD. WOBURN, MA 01801 TEL: (617) 935-5150 = FAX: (617) 824-4579 1-55