1
LT5527
5527f
■
Cellular, WCDMA, TD-SCDMA and UMTS
Infrastructure
■
GSM900/GSM1800/GSM1900 Infrastructure
■
900MHz/2.4GHz/3.5GHz WLAN
■
MMDS, WiMAX
■
High Linearity Downmixer Applications
High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure
400MHz to 3.7GHz
High Signal Level
Downconverting Mixer
■
50
Ω
Single-Ended RF and LO Ports
■
Wide RF Frequency Range: 400MHz to 3.7GHz*
■
High Input IP3: 24.5dBm at 900MHz
23.5dBm at 1900MHz
■
Conversion Gain: 3.2dB at 900MHz
2.3dB at 1900MHz
■
Integrated LO Buffer: Low LO Drive Level
■
High LO-RF and LO-IF Isolation
■
Low Noise Figure: 11.6dB at 900MHz
12.5dB at 1900MHz
■
Very Few External Components
■
Enable Function
■
4.5V to 5.25V Supply Voltage Range
■
16-Lead (4mm × 4mm) QFN Package
FEATURES
DESCRIPTIO
U
APPLICATIO S
U
TYPICAL APPLICATIO
U
The LT
®
5527 active mixer is optimized for high linearity,
wide dynamic range downconverter applications. The IC
includes a high speed differential LO buffer amplifier
driving a double-balanced mixer. Broadband, integrated
transformers on the RF and LO inputs provide single-
ended 50Ω interfaces. The differential IF output allows
convenient interfacing to differential IF filters and amplifi-
ers, or is easily matched to drive 50Ω single-ended, with
or without an external transformer.
The RF input is internally matched to 50Ω from 1.7GHz to
3GHz, and the LO input is internally matched to 50Ω from
1.2GHz to 5GHz. The frequency range of both ports is
easily extended with simple external matching. The IF
output is partially matched and usable for IF frequencies
up to 600MHz.
The LT5527’s high level of integration minimizes the total
solution cost, board space and system-level variation.
LO POWER (dBm)
–9
2
G
C
, SSB NF (dB), IIP3 (dBm)
LO-RF LEAKAGE (dBm)
6
10
14
18
–5 –1–7 –3 1
5527 TA01b
3
22
4
8
12
16
20
24
–75
–65
–55
–45
–35
–25
–70
–60
–50
–40
–30
–20
IIP3
SSB NF
LO-RF
G
C
IF = 240MHz
LOW SIDE LO
T
A
= 25°C
V
CC
= 5V
BIAS
EN
RF
IF
+
IF
–
100nH
100nH
4.7pF
220nH
IF
OUTPUT
240MHz
RF
INPUT
V
CC2
V
CC1
LO INPUT
–3dBm (TYP)
1nF 1µF
1nF
4.7pF
5V
5527 TA01a
LT5527
GND
1.9GHz Conversion Gain, IIP3, SSB NF and
LO-RF Leakage vs LO Power
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance. Consult factory for
information and assistance.
2
LT5527
5527f
Supply Voltage (V
CC1
, V
CC2
, IF
+
, IF
–
) ...................... 5.5V
Enable Voltage ............................... –0.3V to V
CC
+ 0.3V
LO Input Power (380MHz to 4GHz) .................. +10dBm
LO Input DC Voltage ............................ –1V to V
CC
+ 1V
RF Input Power (400MHz to 4GHz) .................. +12dBm
RF Input DC Voltage ............................................ ±0.1V
Operating Temperature Range ............... –40°C to 85°C
Storage Temperature Range ................ – 65°C to 125°C
Junction Temperature (T
J
)................................... 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ABSOLUTE AXI U RATI GS
WWWU
PACKAGE/ORDER I FOR ATIO
UU
W
(Note 1)
LT5527EUF
ORDER PART
NUMBER
UF PART MARKING
5527
T
JMAX
= 125°C, θ
JA
= 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
VCC = 5V, EN = High, TA = 25°C, unless otherwise specified. Test circuit shown in Figure 1. (Note 3)
16 15 14 13
5 6 7 8
TOP VIEW
17
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
9
10
11
12
4
3
2
1NC
NC
RF
NC
GND
IF
+
IF
–
GND
NC
LO
NC
NC
EN
V
CC2
V
CC1
NC
DC ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
RF Input Frequency Range No External Matching (Midband) 1700 to 3000 MHz
With External Matching (Low Band or High Band) 400 3700 MHz
LO Input Frequency Range No External Matching 1200 to 3500 MHz
With External Matching 380 MHz
IF Output Frequency Range Requires Appropriate IF Matching 0.1 to 600 MHz
RF Input Return Loss Z
O
= 50Ω, 1700MHz to 3000MHz >10 dB
LO Input Return Loss Z
O
= 50Ω, 1200MHz to 3400MHz >12 dB
IF Output Impedance Differential at 240MHz 407Ω||2.5pF R||C
LO Input Power 1200MHz to 3500MHz –8 –3 2 dBm
380MHz to 1200MHz –5 0 5 dBm
AC ELECTRICAL CHARACTERISTICS
Test circuit shown in Figure 1. (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (V
CC
)
Supply Voltage 4.5 5 5.25 V DC
Supply Current V
CC1
(Pin 7) 23.2 mA
V
CC2
(Pin 6) 2.8 mA
IF
+
+ IF
–
(Pin 11 + Pin 10) 52 60 mA
Total Supply Current 78 88 mA
Enable (EN) Low = Off, High = On
Shutdown Current EN = Low 100 µA
Input High Voltage (On) 3V DC
Input Low Voltage (Off) 0.3 V DC
EN Pin Input Current EN = 5V DC 50 90 µA
Turn-ON Time 3µs
Turn-OFF Time 3µs
3
LT5527
5527f
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 450MHz, IF = 140MHz, High Side LO 2.5 dB
RF = 900MHz, IF = 140MHz 3.4 dB
RF = 1700MHz 2.3 dB
RF = 1900MHz 2.3 dB
RF = 2200MHz 2.0 dB
RF = 2650MHz 1.8 dB
RF = 3500MHz, IF = 380MHz 0.3 dB
Conversion Gain vs Temperature T
A
= –40°C to 85°C, RF = 1900MHz –0.018 dB/°C
Input 3rd Order Intercept RF = 450MHz, IF = 140MHz, High Side LO 23.2 dBm
RF = 900MHz, IF = 140MHz 24.5 dBm
RF = 1700MHz 24.2 dBm
RF = 1900MHz 23.5 dBm
RF = 2200MHz 22.7 dBm
RF = 2650MHz 20.8 dBm
RF = 3500MHz, IF = 380MHz 18.2 dBm
Single-Sideband Noise Figure RF = 450MHz, IF = 140MHz, High Side LO 13.3 dB
RF = 900MHz, IF = 140MHz 11.6 dB
RF = 1700MHz 12.1 dB
RF = 1900MHz 12.5 dB
RF = 2200MHz 13.2 dB
RF = 2650MHz 13.9 dB
RF = 3500MHz, IF = 380MHz 16.1 dB
LO to RF Leakage f
LO
= 400MHz to 2100MHz ≤–44 dBm
f
LO
= 2100MHz to 3200MHz ≤–36 dBm
LO to IF Leakage f
LO
= 400MHz to 700MHz ≤–40 dBm
f
LO
= 700MHz to 3200MHz ≤–50 dBm
RF to LO Isolation f
RF
= 400MHz to 2200MHz >43 dB
f
RF
= 2200MHz to 3700MHz >38 dB
RF to IF Isolation f
RF
= 400MHz to 800MHz >42 dB
f
RF
= 800MHz to 3700MHz >54 dB
2RF-2LO Output Spurious Product 900MHz: f
RF
= 830MHz at –5dBm, f
IF
= 140MHz –60 dBc
(f
RF
= f
LO
+ f
IF
/2) 1900MHz: f
RF
= 1780MHz at –5dBm, f
IF
= 240MHz –65 dBc
3RF-3LO Output Spurious Product 900MHz: f
RF
= 806.67MHz at –5dBm, f
IF
= 140MHz –73 dBc
(f
RF
= f
LO
+ f
IF
/3) 1900MHz: f
RF
= 1740MHz at –5dBm, f
IF
= 240MHz –63 dBc
Input 1dB Compression RF = 450MHz, IF = 140MHz, High Side LO 9.5 dBm
RF = 900MHz, IF = 140MHz 8.9 dBm
RF = 1900MHz 9.0 dBm
AC ELECTRICAL CHARACTERISTICS
Standard Downmixer Application: VCC = 5V, EN = High, TA = 25°C,
PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), fLO = fRF – fIF, PLO = –3dBm (0dBm for 450MHz and 900MHz tests),
IF output measured at 240MHz, unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: 450MHz, 900MHz and 3500MHz performance measured with
external LO and RF matching. See Figure 1 and Applications Information.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: SSB Noise Figure measurements performed with a small-signal
noise source and bandpass filter on RF input, and no other RF signal
applied.
4
LT5527
5527f
WU
TYPICAL AC PERFOR A CE CHARACTERISTICS
Midband (No external RF/LO matching)
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –3dBm, IF output measured at 240MHz,
unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency
RF FREQUENCY (MHz)
1700
GC, SSB NF (dB), IIP3 (dBm)
12
16
20
24
2500
5527 G01
8
4
10
14
18
22
SSB NF
GC
6
2
01900 2100 2300 2700
TA = 25°C
IF = 240MHz
LOW SIDE LO
HIGH SIDE LO
IIP3
LO FREQUENCY (MHz)
1200
–90
LO LEAKAGE (dBm)
–80
–70
–60
–50
–30
1500 1800 2100 2400
5527 G02
2700 3000
–40
–85
–75
–65
–55
–35
–45 LO-RF
LO-IF
T
A
= 25°C
P
LO
= –3dBm
RF FREQUENCY (MHz)
1700
ISOLATION (dB)
–60
–50
–40
–30
2500
5527 G03
–70
–80
–65
–55 RF-LO
RF-IF
–45
–35
–75
–85
–90 1900 2100 2300 2700
T
A
= 25°C
LO Leakage vs LO Frequency RF Isolation vs RF Frequency
Conversion Gain and IIP3
vs Temperature (Low Side LO)
TEMPERATURE (°C)
–50
15
IIP3 (dBm)
G
C
(dB)
17
19
21
–25 025 50
5527 G04
75
23
25
16
18
20
22
24
0
2
4
6
8
10
1
3
5
7
9
IIP3
G
C
100
IF = 240MHz
1700MHz
1900MHz
2200MHz
Conversion Gain and IIP3
vs Temperature (High Side LO)
TEMPERATURE (°C)
–50
15
IIP3 (dBm)
G
C
(dB)
17
19
21
–25 025 50
5527 G05
75
23
25
16
18
20
22
24
0
2
4
6
8
10
1
3
5
7
9
IIP3
G
C
100
IF = 240MHz
1700MHz
1900MHz
2200MHz
1900MHz Conversion Gain, IIP3
and NF vs Supply Voltage
SUPPLY VOLTAGE (V)
4.5
GC, SSB NF (dB), IIP3 (dBm)
12
18
20 IIP3
SSB NF
GC
5.5
5527 G06
10
8
04.75 55.25
4
24
22
16
14
6
2
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
1700MHz Conversion Gain, IIP3
and NF vs LO Power
2200MHz Conversion Gain, IIP3
and NF vs LO Power
LO INPUT POWER (dBm)
–9
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–7 –5 –3 –1
5527 G07
13
21
3
7
11
15
23
19
IIP3
GC
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
1900MHz Conversion Gain, IIP3
and NF vs LO Power
LO INPUT POWER (dBm)
–9
0
GC, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–7 –5 –3 –1
5527 G08
13
20
2
6
10
14
22
18
IIP3
GC
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
LO INPUT POWER (dBm)
–9
0
GC, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–7 –5 –3 –1
5527 G09
13
20
2
6
10
14
22
18
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
IIP3
GC
5
LT5527
5527f
WU
TYPICAL AC PERFOR A CE CHARACTERISTICS
Midband (No external RF/LO matching)
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –3dBm, IF output measured at 240MHz,
unless otherwise noted. Test circuit shown in Figure 1.
IF Output Power, IM3 and IM5 vs
RF Input Power (2 Input Tones)
RF INPUT POWER (dBm/TONE)
–21
OUTPUT POWER/TONE (dBm)
–70
–10
0
10
–15 –9 –6
5527 G10
–90
–30
–50
–80
–20
–100
–40
–60
–18 –12 –3 0
T
A
= 25°C
RF1 = 1899.5MHz
RF2 = 1900.5MHz
LO = 1660MHz
IF
OUT
IM3
IM5
RF INPUT POWER (dBm)
–15
OUTPUT POWER (dBm)
–35
–15
15
5
9
5527 G11
–55
–75
–45
–25
–5
–65
–85
–95 –9 –3 3
–12–18 –6 0612
IFOUT
(RF = 1900MHz)
TA = 25°C
LO = 1660MHz
IF = 240MHz
2RF-2LO
(RF = 1780MHz)
3RF-3LO
(RF = 1740MHz)
LO INPUT POWER (dBm)
–9
–100
RELATIVE SPUR LEVEL (dBc)
–90
–80
–70
–7 –5 –3 –1
5527 G12
1
–60
–50
–95
–85
–75
–65
–55
3
3RF-3LO
(RF = 1740MHz)
T
A
= 25°C
LO = 1660MHz
IF = 240MHz
P
RF
= –5dBm
2RF-2LO
(RF = 1780MHz)
IFOUT, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
2 × 2 and 3 × 3 Spurs
vs LO Power (Single Tone)
High Band (3500MHz application with external RF matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
∆f = 1MHz), low side LO, PLO = –3dBm, IF output measured at 380MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and SSB
NF vs RF Frequency
3500MHz Conversion Gain, IIP3
and SSB NF vs LO Power
Low Band (450MHz application with external RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
∆f = 1MHz), PLO = 0dBm, IF output measured at 140MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency
450MHz Conversion Gain,
IIP3 and NF vs LO Power LO Leakage vs LO Frequency
RF FREQUENCY (MHz)
400
G
C
, SSB NF (dB), IIP3 (dBm)
12
18
20
500
5527 G18
10
8
0425 450 475
4
24
22 IIP3
SSB NF
G
C
16
14
6
2
HIGH SIDE LO
T
A
= 25°C
IF = 140MHz
LO INPUT POWER (dBm)
–6
0
G
C
, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–4 –2 0 2
5527 G19
46
20
2
6
10
14
22
18
IIP3
G
C
HIGH SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
LO FREQUENCY (MHz)
400
–80
LO LEAKAGE (dBm)
–70
–60
–50
–40
–30
–20
600 800 1000 1200
5527 G20
LO-IF
(450MHz APP)
LO-RF
(450MHz APP)
LO-RF
(900MHz APP)
T
A
= 25°C
P
LO
= 0dBm
LO-IF
(900MHz APP)
RF FREQUENCY (MHz)
3300
0
GC, SSB NF (dB), IIP3 (dBm)
2
6
8
10
20
14
3400 3500
5527 G13
4
16
18
12
3600 3700
IIP3
LOW SIDE LO
IF = 380MHz
TA = 25°C
GC
SSB NF
LO INPUT POWER (dBm)
–9
–1
GC, SSB NF (dB), IIP3 (dBm)
3
7
11
–7 –5 –3 –1
5527 G14
1
15
19
IIP3
SSB NF
GC
1
5
9
13
17
3
LOW SIDE LO
IF = 380MHz
TA = 25°C
LO/RF FREQUENCY (MHz)
3000
LO LEAKAGE (dBm)
RF-LO ISOLATION (dB)
–50
–40
3800
5527 G15
–60
–70 3200 3400 3600
–20
–30
LO-RF
LO-IF
RF-LO
30
40
20
10
60
50
LO Leakage and RF-LO Isolation
vs LO and RF Frequency
6
LT5527
5527f
WU
TYPICAL AC PERFOR A CE CHARACTERISTICS
Low Band (900MHz application with external
RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = 0dBm, IF output measured at
140MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF vs
RF Frequency (900MHz Low Side
Application)
900MHz Conversion Gain, IIP3 and
NF vs LO Power (Low Side LO)
RF FREQUENCY (MHz)
750
1
G
C
, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
800 850 900 950
5527 G21
1000 1050
21
3
7
11
15
23
19
IIP3
G
C
SSB NF
LOW SIDE LO
T
A
= 25°C
IF = 140MHz
LO INPUT POWER (dBm)
–6
1
G
C
, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–4 –2 0 2
5527 G22
46
21
3
7
11
15
23
19
IIP3
G
C
LOW SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
IFOUT, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
RF INPUT POWER (dBm)
–18
OUTPUT POWER (dBm)
–40
–20
0
20
6
5527 G23
–60
–80
–50
–30
–10
10
–70
–90
–100 –12 –6 0
–15 9
–9 –3 312
IFOUT
(RF = 900MHz)
TA = 25°C
LO = 760MHz
IF = 140MHz
3RF-3LO
(RF = 806.67MHz)
2RF-2LO
(RF = 830MHz)
Conversion Gain, IIP3 and NF vs
RF Frequency (900MHz High Side
Application)
900MHz Conversion Gain, IIP3 and
NF vs LO Power (High Side LO)
2 × 2 and 3 × 3 Spurs
vs LO Power (Single Tone)
RF FREQUENCY (MHz)
750
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
800 850 900 950
5527 G24
1000 1050
21
3
7
11
15
23
19
GC
SSB NF
HIGH SIDE LO
TA = 25°C
IF = 140MHz
IIP3
LO INPUT POWER (dBm)
–6
1
G
C
, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–4 –2 0 2
5527 G25
46
21
3
7
11
15
23
19
IIP3
G
C
HIGH SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
LO INPUT POWER (dBm)
–6
–90
RELATIVE SPUR LEVEL (dBc)
–80
–70
–60
–4 –2 02
5527 G26
4
–50
–40
–85
–75
–65
–55
–45
6
3RF-3LO
(RF = 806.67MHz)
T
A
= 25°C
LO = 760MHz
IF = 140MHz
P
RF
= –5dBm
2RF-2LO
(RF = 830MHz)
WU
TYPICAL DC PERFOR A CE CHARACTERISTICS
Test circuit shown in Figure 1.
Supply Current vs Supply Voltage
SUPPLY VOLTAGE (V)
4.5
71
SUPPLY CURRENT (mA)
72
74
75
76
82
79
4.75 5
5527 G16
73
80
81
78
–40°C
0°C
60°C
85°C
5.25 5.5
25°C
Shutdown Current vs Supply Voltage
SUPPLY VOLTAGE (V)
4.5
0.1
SHUTDOWN CURRENT (µA)
185°C
60°C25°C
0°C
–40°C
10
100
4.75 5
5527 G17
5.25 5.5
7
LT5527
5527f
UU
U
PI FU CTIO S
NC
(Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally.
These pins should be grounded on the circuit board for
improved LO-to-RF and LO-to-IF isolation.
RF (Pin 3): Single-Ended Input for the RF Signal. This pin
is internally connected to the primary side of the RF input
transformer, which has low DC resistance to ground. If the
RF source is not DC blocked, then a series blocking
capacitor must be used. The RF input is internally matched
from 1.7GHz to 3GHz. Operation down to 400MHz or up to
3700MHz is possible with simple external matching.
EN
(Pin 5): Enable Pin. When the input enable voltage is
higher than 3V, the mixer circuits supplied through Pins 6,
7, 10 and 11 are enabled. When the input voltage is less
than 0.3V, all circuits are disabled. Typical input current is
50µA for EN = 5V and 0µA when EN = 0V. The EN pin should
not be left floating. Under no conditions should the EN pin
voltage exceed V
CC
+ 0.3V, even at start-up.
V
CC2
(Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is 2.8mA. This pin should be
externally connected to the V
CC1
pin and decoupled with
1000pF and 1µF capacitors.
V
CC1
(Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is 23.2mA. This pin should
be externally connected to the V
CC2
pin and decoupled
with 1000pF and 1µF capacitors.
GND (Pins 9, 12): Ground. These pins are internally
connected to the backside ground for improved isolation.
They should be connected to the RF ground on the circuit
board, although they are not intended to replace the
primary grounding through the backside contact of the
package.
IF
–
, IF
+
(Pins 10, 11): Differential Outputs for the IF
Signal. An impedance transformation may be required to
match the outputs. These pins must be connected to V
CC
through impedance matching inductors, RF chokes or a
transformer center tap.
LO (Pin 15): Single-Ended Input for the Local Oscillator
Signal. This pin is internally connected to the primary side
of the LO transformer, which is internally DC blocked. An
external blocking capacitor is not required. The LO input is
internally matched from 1.2GHz to 5GHz. Operation down
to 380MHz is possible with simple external matching.
Exposed Pad (Pin 17): Circuit Ground Return for the
Entire IC. This must be soldered to the printed circuit board
ground plane.
BLOCK DIAGRA
W
15
7
11
3
65
10
DOUBLE-BALANCED
MIXER
LINEAR
AMPLIFIER
LIMITING
AMPLIFIERS
LO
VCC2 VCC1
EN
IF+
12
GND
17
EXPOSED
PAD
IF–
9
GND
5525 BD
BIAS
RF
VCC1
REGULATOR
8
LT5527
5527f
TEST CIRCUITS
IFOUT
240MHz
5527 F01
16 15 14 13
56 78
12
11
10
9
NC NC
GND
GND
EN
EN
VCC2 VCC1
NC
RF
LO NC
NC
1
2
3
4
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC
NC
IF+
IF–
RFIN
LOIN
L1 T1
L2
C4
ZO
50Ω
C1 C2
C3
3
VCC
GND
LT5527
L4
C5
L (mm)
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
RF
GND
GND
BIAS
εR = 4.4
0.018"
0.018"
0.062"
2
1
4
5
••
IFOUT
240MHz
5527 F02
16 15 14 13
56 78
12
11
10
9
NC NC
GND
GND
EN
EN
VCC2 VCC1
NC
RF
LO NC
NC
1
2
3
4
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC
NC
IF+
IF–
RFIN
LOIN
L1
L2
L3
C4
ZO
50Ω
C1 C2
C6
C3
C7
DISCRETE
IF BALUN
VCC
GND
LT5527
L4
C5
L (mm)
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 1000pF 0402 AVX 04025C102JAT L4, C4, C5 0402 See Applications Information
C2 1µF 0603 AVX 0603ZD105KAT L1, L2 82nH 0603 Toko LLQ1608-A82N
C3 2.7pF 0402 AVX 04025A2R7CAT T1 4:1 M/A-Com ETC4-1-2 (2MHz to 800MHz)
Figure 1. Downmixer Test Schematic—Standard IF Matching (240MHz IF)
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1, C3 1000pF 0402 AVX 04025C102JAT L4, C4, C5 0402 See Applications Information
C2 1µF 0603 AVX 0603ZD105KAT L1, L2 100nH 0603 Toko LLQ1608-AR10
C6, C7 4.7pF 0402 AVX 04025A4R7CAT L3 220nH 0603 Toko LLQ1608-AR22
Figure 2. Downmixer Test Schematic—Discrete IF Balun Matching (240MHz IF)
APPLICATION LO MATCH RF MATCH
RF LO L4 C4 L C5
450MHz High Side 6.8nH 10pF 4.5mm 12pF
900MHz Low Side 3.9nH 5.6pF 1.3mm 3.9pF
900MHz High Side — 2.7pF 1.3mm 3.9pF
3500MHz Low Side — — 4.5mm 0.5pF
9
LT5527
5527f
APPLICATIO S I FOR ATIO
WUUU
Introduction
The LT5527 consists of a high linearity double-balanced
mixer, RF buffer amplifier, high speed limiting LO buffer
amplifier and bias/enable circuits. The RF and LO inputs
are both single ended. The IF output is differential. Low
side or high side LO injection can be used.
Two evaluation circuits are available. The standard evalu-
ation circuit, shown in Figure 1, incorporates transformer-
based IF matching and is intended for applications that
require the lowest LO-IF leakage levels and the widest IF
bandwidth. The second evaluation circuit, shown in Fig-
ure 2, replaces the IF transformer with a discrete IF balun
for reduced solution cost and size. The discrete IF balun
delivers comparable noise figure and linearity, higher
conversion gain, but degraded LO-IF leakage and reduced
IF bandwidth.
RF Input Port
The mixer’s RF input, shown in Figure 3, consists of an
integrated transformer and a high linearity differential
amplifier. The primary terminals of the transformer are
connected to the RF input pin (Pin 3) and ground. The
secondary side of the transformer is internally connected
to the amplifier’s differential inputs.
One terminal of the transformer’s primary is internally
grounded. If the RF source has DC voltage present, then a
coupling capacitor must be used in series with the RF input
pin.
The RF input is internally matched from 1.7GHz to 3GHz,
requiring no external components over this frequency
range. The input return loss, shown in Figure 4a, is typi-
cally 10dB at the band edges. The input match at the lower
band edge can be optimized with a series 2.7pF capacitor
at Pin 3, which improves the 1.7GHz return loss to greater
than 20dB. Likewise, the 2.7GHz match can be improved
to greater than 30dB with a series 1.5nH inductor. A series
1.5nH/2.7pF network will simultaneously optimize the lower
and upper band edges and expand the RF input bandwidth
to 1.1GHz-3.3GHz. Measured RF input return losses for
these three cases are also plotted in Figure 4a.
Alternatively, the input match can be shifted down, as low
as 400MHz or up to 3700MHz, by adding a shunt capacitor
(C5) to the RF input. A 450MHz input match is realized with
C5 = 12pF, located 4.5mm away from Pin 3 on the evalu-
ation board’s 50Ω input transmission line. A 900MHz in-
put match requires C5 = 3.9pF, located at 1.3mm. A
3500MHz input match is realized with C5 = 0.5pF, located
RF
IN
Z
O
=
50Ω
L = L (mm)
C5
RF
5527 F03
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY TO
MIXER
3
Figure 3. RF Input Schematic
Figure 4. RF Input Return Loss With
and Without External Matching
RF FREQUENCY (GHz)
0.2
–30
RF PORT RETURN LOSS (dB)
–25
–20
–15
–10
1.2 2.2 3.2 4.2
5527 F04b
–5
0
0.7 1.7 2.7 3.7
NO EXTERNAL
MATCHING
900MHz
C5 = 3.9pF
L = 1.3mm
450MHz
C5 = 12pF
L = 4.5mm
3.5GHz
C5 = 0.5pF
L = 4.5mm
(4b) Series Shunt Matching
(4a) Series Reactance Matching
FREQUENCY (GHz)
0.2
–30
RF PORT RETURN LOSS (dB)
–25
–20
–15
–10
1.2 2.2 3.2 4.2
5527 F04a
–5
0
0.7 1.7 2.7 3.7
SERIES 1.5nH
SERIES 2.7pF
NO EXTERNAL
MATCHING
SERIES 1.5nH
SERIES 2.7pF
10
LT5527
5527f
at 4.5mm. This series transmission line/shunt capacitor
matching topology allows the LT5527 to be used for mul-
tiple frequency standards without circuit board layout
modifications. The series transmission line can also be
replaced with a series chip inductor for a more compact
layout.
Input return loss for these three cases (450MHz, 900MHz
and 3500MHz) are plotted in Figure 4b. The input return
loss with no external matching is repeated in Figure 4b for
comparison.
RF input impedance and S11 versus frequency (with no
external matching) is listed in Table 1 and referenced to
Pin 3. The S11 data can be used with a microwave circuit
simulator to design custom matching networks and simu-
late board-level interfacing to the RF input filter.
Table 1. RF Input Impedance vs Frequency
FREQUENCY INPUT S11
(MHz) IMPEDANCE MAG ANGLE
50 4.8 + j2.6 0.825 173.9
300 9.0 + j11.9 0.708 152.5
450 11.9 + j15.3 0.644 144.3
600 14.3 + j18.2 0.600 137.2
900 19.4 + j23.8 0.529 123.2
1200 26.1 + j29.8 0.467 107.4
1500 37.3 + j33.9 0.386 89.3
1850 57.4 + j29.7 0.275 60.6
2150 71.3 + j10.1 0.193 20.6
2450 64.6 – j13.9 0.175 –36.8
2650 53.0 – j21.8 0.209 –70.3
3000 35.0 – j21.2 0.297 –111.2
3500 20.7 – j9.0 0.431 –155.8
4000 14.2 + j6.2 0.564 164.8
5000 10.4 + j31.9 0.745 113.3
LO Input Port
The mixer’s LO input, shown in Figure 5, consists of an
integrated transformer and high speed limiting differential
amplifiers. The amplifiers are designed to precisely drive
the mixer for the highest linearity and the lowest noise
figure. An internal DC blocking capacitor in series with the
transformer’s primary eliminates the need for an external
blocking capacitor.
The LO input is internally matched from 1.2GHz to 5GHz,
although the maximum useful frequency is limited to
3.5GHz by the internal amplifiers. The input match can be
shifted down, as low as 750MHz, with a single shunt
capacitor (C4) on Pin 15. One example is plotted in
Figure 6 where C4 = 2.7pF produces an 850MHz to
1.2GHz match.
LO input matching below 750MHz requires the series
inductor (L4)/shunt capacitor (C4) network shown in
Figure 5. Two examples are plotted in Figure 6 where L4 =
3.9nH/C4 = 5.6pF produces a 650MHz to 830MHz match
and L4 = 6.8nH/C4 = 10pF produces a 540MHz to 640MHz
match. The evaluation boards do not include pads for L4,
so the circuit trace needs to be cut near Pin 15 to insert L4.
A low cost multilayer chip inductor is adequate for L4.
The optimum LO drive is –3dBm for LO frequencies above
1.2GHz, although the amplifiers are designed to accom-
modate several dB of LO input power variation without
significant mixer performance variation. Below 1.2GHz,
APPLICATIO S I FOR ATIO
WUUU
LOIN
C4
L4 LO
VCC2
VBIAS LIMITER
5527 F05
EXTERNAL
MATCHING
FOR LOW BAND
ONLY TO
MIXER
15
LO FREQUENCY (GHz)
0.1
–30
LO PORT RETURN LOSS (dB)
–25
–20
–15
–10
0
15
5527 F06
–5 L4 = 6.8nH
C4 = 10pF
L4 = 3.9nH
C4 = 5.6pF
L4 = 0nH
C4 = 2.7pF
NO
EXTERNAL
MATCHING
Figure 5. LO Input Schematic
Figure 6. LO Input Return Loss
11
LT5527
5527f
0dBm LO drive is recommended for optimum noise figure,
although –3dBm will still deliver good conversion gain
and linearity.
Custom matching networks can be designed using the
port impedance data listed in Table 2. This data is refer-
enced to the LO pin with no external matching.
Table 2. LO Input Impedance vs Frequency
FREQUENCY INPUT S11
(MHz) IMPEDANCE MAG ANGLE
50 30.4 – j355.7 0.977 –15.9
300 8.7 – j52.2 0.847 –86.7
450 9.4 – j25.4 0.740 –124.8
600 11.5 – j8.9 0.635 –158.7
900 19.7 + j12.8 0.463 146.7
1200 34.3 + j24.3 0.330 106.9
1500 49.8 + j21.3 0.209 78.5
1850 53.8 + j8.9 0.093 61.7
2150 50.4 + j3.2 0.032 80.5
2450 45.1 + j0.3 0.052 176.5
2650 41.1 + j2.4 0.101 163.1
3000 41.9 + j8.1 0.124 129.8
3500 49.0 + j12.0 0.120 87.9
4000 55.4 + j8.6 0.096 53.2
5000 33.2 + j8.7 0.226 146.7
IF Output Port
The IF outputs, IF+ and IF–, are internally connected to the
collectors of the mixer switching transistors (see Fig-
ure 7). Both pins must be biased at the supply voltage,
which can be applied through the center tap of a trans-
former or through matching inductors. Each IF pin draws
26mA of supply current (52mA total). For optimum single-
ended performance, these differential outputs should be
combined externally through an IF transformer or a
discrete IF balun circuit. The standard evaluation board
(see Figure 1) includes an IF transformer for impedance
transformation and differential to single-ended transfor-
mation. A second evaluation board (see Figure 2) realizes
the same functionality with a discrete IF balun circuit.
The IF output impedance can be modeled as 415Ω in
parallel with 2.5pF at low frequencies. An equivalent
small-signal model (including bondwire inductance) is
shown in Figure 8. Frequency-dependent differential IF
output impedance is listed in Table 3. This data is refer-
enced to the package pins (with no external components)
and includes the effects of IC and package parasitics. The
IF output can be matched for IF frequencies as low as
several kHz or as high as 600MHz.
Table 3. IF Output Impedance vs Frequency
DIFFERENTIAL OUTPUT
FREQUENCY (MHz) IMPEDANCE (R
IF
|| X
IF
)
1 415||-j64k
10 415||-j6.4k
70 415||-j909
140 413||-j453
240 407||-j264
300 403||-j211
380 395||-j165
450 387||-j138
500 381||-j124
The following three methods of differential to single-
ended IF matching will be described:
• Direct 8:1 transformer
• Lowpass matching + 4:1 transformer
• Discrete IF balun
APPLICATIO S I FOR ATIO
WUUU
11
10
IF+L1 4:1
L2
5527 F07
IF–
VCC
C3 VCC
IFOUT
50Ω
Figure 7. IF Output with External Matching
11
10
IF+
0.7nH
0.7nH
5527 F08
IF–
2.5pF
RS
415Ω
Figure 8. IF Output Small-Signal Model
12
LT5527
5527f
Direct 8:1 IF Transformer Matching
For IF frequencies below 100MHz, the simplest IF match-
ing technique is an 8:1 transformer connected across the
IF pins. The transformer will perform impedance transfor-
mation and provide a single-ended 50Ω output. No other
matching is required. Measured performance using this
technique is shown in Figure 9. This matching is easily
implemented on the standard evaluation board by short-
ing across the pads for L1 and L2 and replacing the 4:1
transformer with an 8:1 (C3 not installed).
chip inductors (L1 and L2) improve the mixer’s conver-
sion gain by a few tenths of a dB, but have little effect on
linearity. Measured output return losses for each case are
plotted in Figure 10 for the simple 8:1 transformer method
and for the lowpass/4:1 transformer method.
Table 4. IF Matching Element Values
IF
FREQUENCY L1, L2 IF
PLOT (MHz) (nH) C3 (pF) TRANSFORMER
1 1 to 100 Short — TC8-1 (8:1)
2 140 120 — ETC4-1-2 (4:1)
3 190 110 2.7 ETC4-1-2 (4:1)
4 240 82 2.7 ETC4-1-2 (4:1)
5 380 56 2.2 ETC4-1-2 (4:1)
6 450 43 2.2 ETC4-1-2 (4:1)
APPLICATIO S I FOR ATIO
WUUU
IF OUTPUT FREQUENCY (MHz)
10
GC (dB), IIP3 (dBm), SSB NF (dB)
13
17
21
25
50
5527 F09
9
5
11
15
19
23
7
3
120 30 40 60 70 80 90 100
RF = 900MHz
HIGH SIDE LO AT 0dBm
VCC = 5V DC
TA = 25°C
C4 = 2.7pF, C5 = 3.9pF
IIP3
SSB NF
GC
Figure 9. Typical Conversion Gain, IIP3 and
SSB NF Using an 8:1 IF Transformer
Lowpass + 4:1 IF Transformer Matching
The lowest LO-IF leakage and wide IF bandwidth are
realized by using the simple, three element lowpass match-
ing network shown in Figure 7. Matching elements C3, L1
and L2, in conjunction with the internal 2.5pF capacitance,
form a 400Ω to 200Ω lowpass matching network which is
tuned to the desired IF frequency. The 4:1 transformer
then transforms the 200Ω differential output to a 50Ω
single-ended output.
This matching network is most suitable for IF frequencies
above 40MHz or so. Below 40MHz, the value of the series
inductors (L1 and L2) becomes unreasonably high, and
could cause stability problems, depending on the inductor
value and parasitics. Therefore, the 8:1 transformer tech-
nique is recommended for low IF frequencies.
Suggested lowpass matching element values for several
IF frequencies are listed in Table 4. High-Q wire-wound
IF FREQUENCY (MHz)
–30
IF PORT RETURN LOSS (dB)
–20
–10
0
–25
–15
–5
100 200 300 400
5527 F10
50050
1
2
3
45
6
0 150 250 350 450
Figure 10. IF Output Return Losses
with Lowpass/Transformer Matching
Discrete IF Balun Matching
For many applications, it is possible to replace the IF
transformer with the discrete IF balun shown in Figure 2.
The values of L1, L2, C6 and C7 are calculated to realize a
180 degree phase shift at the desired IF frequency and
provide a 50Ω single-ended output, using the equations
listed below. Inductor L3 is calculated to cancel the
internal 2.5pF capacitance. L3 also supplies bias voltage to
the IF
+
pin. Low cost multilayer chip inductors are ad-
equate for L1 and L2. A high Q wire-wound chip inductor
is recommended for L3 to maximize conversion gain and
minimize DC voltage drop to the IF
+
pin. C3 is a DC
blocking capacitor.
13
LT5527
5527f
APPLICATIO S I FOR ATIO
WUUU
LL RR
CC RR
LX
IF OUT
IF
IF IF OUT
IF
IF
12
67 1
3
,•
,••
=
=
=
ω
ω
ω
Compared to the lowpass/4:1 transformer matching tech-
nique, this network delivers approximately 0.8dB higher
conversion gain (since the IF transformer loss is elimi-
nated) and comparable noise figure and IIP3. At a ±15%
offset from the IF center frequency, conversion gain and
noise figure degrade about 1dB. Beyond ±15%, conver-
sion gain decreases gradually but noise figure increases
rapidly. IIP3 is less sensitive to bandwidth. Other than IF
bandwidth, the most significant difference is LO-IF leak-
age, which degrades to approximately – 38dBm compared
to the superior performance realized with the lowpass/4:1
transformer matching.
Discrete IF balun element values for four common IF
frequencies are listed in Table 5. The corresponding
measured IF output return losses are shown in Figure 11.
The values listed in Table 5 differ from the calculated
values slightly due to circuit board and component
parasitics. Typical conversion gain, IIP3 and LO-IF leak-
age, versus RF input frequency, for all four IF frequency
examples is shown in Figure 12. Typical conversion gain,
IIP3 and noise figure versus IF output frequency for the
same circuits are shown in Figure 13.
Table 5. Discrete IF Balun Element Values (R
OUT
= 50Ω)
IF FREQUENCY L1, L2 C6, C7 L3
(MHz) (nH) (pF) (nH)
190 120 6.8 220
240 100 4.7 220
380 56 3 68
450 47 2.7 47
For fully differential IF architectures, the IF transformer
can be eliminated. An example is shown in Figure 14,
where the mixer’s IF output is matched directly into a SAW
filter. Supply voltage to the mixer’s IF pins is applied
IF FREQUENCY (MHz)
–30
IF PORT RETURN LOSS (dB)
–20
–10
0
–25
–15
–5
150 250 350 450
5527 F11
55010050 200 300 400 500
190MHz
240MHz 380MHz
450MHz
Figure 11. IF Output Return Losses with Discrete Balun Matching
RF INPUT FREQUENCY (MHz)
1700
GC (dB), IIP3 (dBm)
LO-IF LEAKAGE (dBm)
14
18
22
26
2500
5527 F12
10
6
12
16
20
24
8
4
2
–30
–20
–10
0
–40
–50
–60
1900 2100 2300 2700
190IF
240IF
380IF
450IF
LOW SIDE LO (–3dBm)
TA = 25°C
IIP3
LO-IF
GC
Figure 12. Conversion Gain, IIP3 and LO-IF Leakage vs RF Input
Frequency Using Discrete IF Balun Matching
IF OUTPUT FREQUENCY (MHz)
150
G
C
, SSB NF (dB), IIP3 (dBm)
12
18
20
550
5527 F13
10
8
0250 350 450
200 300 400 500
4
26
24
22 IIP3
G
C
16
14
6
2
190IF
240IF
380IF
450IF
LOW SIDE LO (–3dBm)
T
A
= 25°C
SSB NF
Figure 13. Conversion Gain, IIP3 and SSB NF vs IF Output
Frequency Using Discrete IF Balun Matching
14
LT5527
5527f
APPLICATIO S I FOR ATIO
WUUU
through matching inductors in a band-pass IF matching
network. The values of L1, L2 and C3 are calculated to
resonate at the desired IF frequency with a quality factor
that satisfies the required IF bandwidth. The L and C
values are then adjusted to account for the mixer’s
internal 2.5pF capacitance and the SAW filter’s input
capacitance. In this case, the differential IF output imped-
ance is 400Ω since the bandpass network does not
transform the impedance.
Additional matching elements may be required if the SAW
filter’s input impedance is less than or greater than 400Ω.
Contact the factory for application assistance.
IF
AMP
SAW
FILTER
L1
IF
+
IF
–
L2
C3
SUPPLY
DECOUPLING
V
CC
5527 F14
Figure 14. Bandpass IF Matching for Differential IF Architectures
Standard Evaluation Board Layout Discrete IF Evaluation Board Layout
15
LT5527
5527f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
4.00 ± 0.10
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.55 ± 0.20
1615
1
2
BOTTOM VIEW—EXPOSED PAD
2.15 ± 0.10
(4-SIDES)
0.75 ± 0.05 R = 0.115
TYP
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
(UF) QFN 09-04
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.72 ±0.05
0.30 ±0.05
0.65 BSC
2.15 ± 0.05
(4 SIDES)
2.90 ± 0.05
4.35 ± 0.05
PACKAGE OUTLINE
PIN 1 NOTCH R = 0.20 TYP
OR 0.25 × 45° CHAMFER
16
LT5527
5527f
© LINEAR TECHNOLOGY CORPORATION 2005
LT/TP 0305 500 • PRINTED IN THE USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
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LT5525 High Linearity, Low Power Downconverting Mixer Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I
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RF Power Detectors
LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply
LTC®5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Shutdown, Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Shutdown, Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz RF Power Detector with 60dB ±1dB Output Variation over Temperature, 38ns Response Time
Dynamic Range
LTC5536 Precision 600MHz to 7GHz RF Detector 25ns Response Time, Comparator Reference Input, Latch Enable Input,
with Fast Compatator Output –26dBm to +12dBm Input Range
Low Voltage RF Building Block
LT5546 500MHz Quadrature Demodulator with VGA and 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to
17MHz Baseband Bandwidth 56dB Linear Power Gain
Wide Bandwidth ADCs
LTC1749 12-Bit, 80Msps 500MHz BW S/H, 71.8dB SNR
LTC1750 14-Bit, 80Msps 500MHz BW S/H, 75.5dB SNR
